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GBPC5010T

Description
Bridge Rectifiers 1000 V - 50 A
CategoryDiscrete semiconductor    diode   
File Size325KB,5 Pages
ManufacturerGeneSiC
Websitehttp://www.genesicsemi.com/
Environmental Compliance
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GBPC5010T Overview

Bridge Rectifiers 1000 V - 50 A

GBPC5010T Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Reach Compliance Codecompliant
Is SamacsysN
ConfigurationBRIDGE, 4 ELEMENTS
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
Maximum non-repetitive peak forward current400 A
Number of components4
Maximum operating temperature150 °C
Maximum output current50 A
Maximum repetitive peak reverse voltage1000 V
Base Number Matches1
GBPC5006T/W thru GBPC5010T/W
Single Phase Glass Passivated
Silicon Bridge Rectifier
Features
• Integrally molded heat sink provides low thermal resistance
for maximum heat dissipation
• High surge current capability
• Void-free junction soldering by using vacuum soldering
• Universal 3-way terminals: snap on, wire-around, or P.C
board mounting
• High temperature soldering guaranteed: 260⁰C/ 10
seconds at 5 lbs (2.3 kg) tension
• Not ESD Sensitive
V
RRM
= 600 V - 1000 V
I
O
= 50 A
GBPC-T/W Package
Mechanical Data
Case: Molded plastic with heat sink integrally mounted in the bridge
encapsulation
Terminals: Either nickel plated 0.25". Faston lugs or copper leads
0.040" diameter.
Polarity: Polarrity symbols marked on the body
Mounting position: Bolt down on heat-sink with silicone thermal
compound between bridge and mounting surface
Weight: 19 grams or 0.67 ounces
Mounting t
M
ti torque: 20 i h lb max
inch-lbs
Maximum ratings at Tc = 25 °C, unless otherwise specified (GBPCXXXXT uses GBPC-T package while GBPCXXXXW
uses GBPC-W package)
Parameter
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
T
j
T
stg
Conditions
GBPC5006T/W
600
420
600
-55 to 150
-55 to 150
GBPC5008T/W
800
560
800
-55 to 150
-55 to 150
GBPC5010T/W
1000
700
1000
-55 to 150
-55 to 150
Unit
V
V
V
°C
°C
Electrical characteristics at Tc = 25 °C, unless otherwise specified
Single phase, half sine wave, 60 Hz, resistive or inductive load
For capacitive load derate current by 20%
Parameter
Maximum average forward rectified
current
Peak forward surge current
Maximum instantaneous forward
voltage drop per leg
Maximum DC reverse current at
rated DC blocking voltage per leg
Rating for fusing
RMS isolation voltage from case to
leads
Symbol
I
O
I
FSM
V
F
I
R
I
2
t
V
ISO
C
j
R
ΘJC
Conditions
T
c
= 50 °C
single sine-wave
I
F
= 25 A
T
a
= 25 °C
T
a
= 125 °C
1 ms < t
m
< 8.3 ms
GBPC5006T/W
50.0
400
1.2
5
500
1200
2500
360
1.2
GBPC5008T/W
50.0
400
1.2
5
500
1200
2500
360
1.2
GBPC5010T/W
50.0
400
1.2
5
500
1200
2500
360
1.2
Unit
A
A
V
μA
A
2
sec
V
pF
°C/W
Typical junction capacitance
Typical thermal resistance
Apr 2016
Latest version of this datasheet at: www.genesicsemi.com/silicon-products/bridge-rectifiers/
1

GBPC5010T Related Products

GBPC5010T GBPC5010W
Description Bridge Rectifiers 1000 V - 50 A Bridge Rectifiers 1000 V - 50 A
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Reach Compliance Code compliant compliant
Is Samacsys N N
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1.2 V 1.2 V
Maximum non-repetitive peak forward current 400 A 400 A
Number of components 4 4
Maximum operating temperature 150 °C 150 °C
Maximum output current 50 A 50 A
Maximum repetitive peak reverse voltage 1000 V 1000 V
Base Number Matches 1 1
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