d. Maximum under Steady State conditions is 80 °C/W.
Document Number: 73685
S09-0138-Rev. C, 02-Feb-09
www.vishay.com
1
b, d
t
≤
10 s
Steady State
Symbol
R
thJA
R
thJF
Typical
29
13
Maximum
35
16
Unit
°C/W
Si4630DY
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
Pulse Diode Forward
Body Diode Voltage
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 13 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 3 A
0.72
47
50
23
24
T
C
= 25 °C
7
70
1.1
70
75
A
V
ns
nC
ns
b
Symbol
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 16 V
V
DS
= 25 V, V
GS
= 0 V
V
DS
= 25 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
V
GS
= 4.5 V, I
D
= 15 A
V
DS
= 15 V, I
D
= 20 A
Min.
25
Typ.
Max.
Unit
V
28
-6
1.0
2.2
± 100
1
10
30
0.0022
0.0026
120
6670
0.0027
0.0032
mV/°C
V
nA
µA
A
Ω
S
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 15 V, V
GS
= 10 V, I
D
= 20 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 20 A
f = 1 MHz
V
DD
= 15 V, R
L
= 1.5Ω
I
D
≅
10 A, V
GEN
= 4.5 V, R
g
= 1
Ω
997
531
107.5
49
15.7
13.6
1.5
37
122
47
15
17
2.25
56
185
71
23
26
140
90
15
161
73
pF
nC
Ω
ns
V
DD
= 15 V, R
L
= 1.5
Ω
I
D
≅
10 A, V
GEN
= 10 V, R
g
= 1
Ω
93
60
9
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73685
S09-0138-Rev. C, 02-Feb-09
Si4630DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
70
60
50
40
30
20
10
0
0.0
V
GS
= 10 thru 3
V
1.0
I
D
- Drain C
u
rrent (A)
25 °C, unless otherwise noted
1.2
I
D
- Drain C
u
rrent (A)
0.8
0.6
25 °C
0.4
0.2
T
C
= 125 °C
- 55 °C
0.5
1.0
1.5
2.0
2.5
0.0
0.0
0.6
1.2
1.8
2.4
3.0
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.0034
8500
Transfer Characteristics
C
iss
R
DS(on)
- On-Resistance (mΩ)
0.0030
V
GS
= 4.5
V
0.0026
C - Capacitance (pF)
6800
5100
3400
V
GS
= 10
V
0.0022
1700
C
rss
0
5
C
oss
0.0018
0
10
20
30
40
50
60
0
10
15
20
25
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage
10
I
D
= 20 A
8
V
DS
= 10
V
R
DS(on)
- On-Resistance
1.4
1.6
I
D
= 20 A
Capacitance
V
G S
- Gate-to-So
u
rce
V
oltage (
V
)
V
GS
= 4.5
V
6
(
N
ormalized)
V
DS
= 15
V
1.2
V
GS
= 10
V
4
V
GS
= 20
V
1.0
2
0.8
0
0
22
44
66
88
110
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 73685
S09-0138-Rev. C, 02-Feb-09
www.vishay.com
3
Si4630DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100.000
R
DS(on)
- Drain-to-So
u
rce On-Resistance (Ω )
0.010
10.000
I
S
- So
u
rce C
u
rrent (A)
0.008
1.000
150 °C
0.006
0.100
25 °C
0.004
125 °C
0.010
0.002
25 °C
0.001
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0.000
0
1
2
3
4
5
6
7
8
9
10
V
GS
- Gate-to-Source
Voltage
(V)
V
SD
- Source-to-Drain
Voltage
(V)
Source-Drain Diode Forward Voltage
0.5
I
D
= 250
µA
0.2
I
D
= 5 mA
V
GS(th)
(
V
)
- 0.1
160
200
On-Resistance vs. Gate-to-Source Voltage
Po
w
er (
W
)
120
- 0.4
80
- 0.7
40
- 1.0
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
Time (s)
1
10
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
10
I
D
- Drain C
u
rrent (A)
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
1
100 ms
1s
0.1
T
A
= 25 °C
Single Pulse
0.01
0.1
*
V
GS
10 s
DC
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 73685
S09-0138-Rev. C, 02-Feb-09
Si4630DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
45
40
35
I
D
- Drain C
u
rrent (A)
30
25
20
15
10
5
0
0
25
50
75
100
125
150
Package Limited
T
C
- Case Temperature (°C)
Current Derating*
10
2.0
8
1.6
Po
w
er (W)
6
Po
w
er (W)
0
25
50
75
100
125
150
1.2
4
0.8
2
0.4
0
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
Power, Junction-to-Foot
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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51mcu
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