2N4427
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
•
•
•
•
•
•
•
Silicon NPN, To-39 packaged VHF/UHF Transistor
1 Watt Minimum Power Output @ 175 MHz
500 MHz Current-Gain Bandwidth Product @ 50mA
Power Gain, G
PE
= 10dB (Min) @ 175 MHz
TO-39
1. Emitter
2. Base
3. Collector
DESCRIPTION:
Silicon NPN transistor, designed for VHF and UHF equipment.
Applications include amplifier; pre-driver, driver, and output
stages. Also suitable for oscillator
and frequency-multiplier functions.
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25
°
C)
Symbol
V
CEO
V
CBO
V
EBO
I
C
Parameter
Collector-Emitter
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Value
20
40
2.0
400
Unit
Vdc
Vdc
Vdc
mA
Thermal Data
P
D
Total Device Dissipation @ T
A
= 25ºC
Derate above 25ºC
1.0
5.71
Watts
mW/ º
C
2N4427.PDF 6-25-03
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct
2N4427
ELECTRICAL SPECIFICATIONS (Tcase = 25
°
C)
STATIC
(off)
Symbol
BVCER
BVCEO
ICEO
ICEX
IEBO
Test Conditions
Min.
Collector-Emitter Sustaining Voltage
(IC = 5.0 mAdc, RBE = 10 ohms)
Collector-Emitter Sustaining Voltage
(IC=5.0 mAdc, IB=0)
Collector Cutoff Current
(VCE = 12 Vdc, IB = 0)
Collector Cutoff Current
(VCE = 40 Vdc, VBE = -1.5 Vdc)
Emitter Cutoff Current
(VEB = 2.0 Vdc, IC = 0)
40
20
-
-
-
Value
Typ.
-
-
-
-
-
Max.
-
-
20
100
100
Unit
Vdc
Vdc
µA
µA
µA
(on)
HFE
DC Current Gain
(IC = 100 mAdc, VCE = 5.0 Vdc)
(IC = 360 mAdc, VCE = 5.0 Vdc)
Collector-Emitter Saturation Voltage
(IC = 100 mAdc, IB = 20 mAdc)
10
5
-
-
200
-
-
-
Vdc
VCE(sat)
-
-
0.5
DYNAMIC
Symbol
f
T
COB
Test Conditions
Min.
Current-Gain - Bandwidth Product
(IC = 50 mAdc, VCE = 15 Vdc, f = 200 MHz)
Output Capacitance
(VCB = 12 Vdc, IE = 0, f = 1.0 MHz)
500
-
Value
Typ.
-
4.0
Max.
-
-
Unit
MHz
pF
2N4427.PDF 6-25-03
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct
2N4427
ELECTRICAL SPECIFICATIONS (Tcase = 25
°
C)
FUNCTIONAL
Symbol
G
PE
Power Gain
Test Conditions
Min.
Test Circuit-Figure 1
Pin = 0.1 W, VCE = 12Vdc
f = 175 MHz
Test Circuit-Figure 1
Pin = 0.1 W, VCE = 12Vdc
f = 175 MHz
Test Circuit-Figure 1
Pin = 0.1 W, VCE = 12Vdc
f = 175 MHz
10
Value
Typ.
-
Max.
-
Unit
dB
Pout
Output Power
1.0
-
-
Watts
Collector Efficiency
η
C
45
-
-
%
3.00
2.50
Pout (Watts)
2.00
1.50
Typical device performance
1.00
0.50
0.00
10.0
35.0
60.0
85.0
110.0
135.0
160.0
185.0
210.0
Pin (mWatts)
2N4427.PDF 6-25-03
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct
2N4427
C5
C6
V
cc
= 12V
L
3
C3
L
4
POUT
C1
P
IN
(R
S
=50 OHMS)
L1
(R
L
=50 OHMS)
C4
C2
L
2
Figure 1 - 175 MHz RF AMPLIFIER CIRCUIT FOR G
PE
, P
OUT
,
AND EFFICIENCY SPECIFICATIONS
.
L
1
: 2 TURNS No. 16 wire, 3/16” ID, 1/4” long
L
3
: 2 TURNS No. 16 wire, 1/4” ID, 1/4” long
Capacitor values in pF unless
L
2
: Ferrite choke, Z=450 ohms
L
4
: 4 TURNS No. 16 wire, 3/8” ID, 3/8” long
Tuning capacitors are air variable
otherwise indicated.
.
2N4427.PDF 6-25-03
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct
2N4427
RF Low Power PA, LNA, and General Purpose Discrete Selector Guide
GPE Freq (MHz)
Efficiency (%)
Gu Max (dB)
12
11.4
15
17
13
5.5
11
14
11
16.5
14.5
15.5
14
15
17.8
15
18
20
15
15
11
14
10
8
10
11
12.5
17.8
14.5
17
IC max (mA)
SO-8
TO-39
POWER MACRO
POWER MACRO
TO-39
TO-39
TO-72
MA C R O X
MA C R O X
TO-39
SO-8
PO W E R M A C R O
PO W E R M A C R O
MA C R O X
MA C R O X
SO-8
PO W E R M A C R O
PO W E R M A C R O
MRF4427, R2
2N4427
MRF553
MRF553T
MRF607
2N6255
2N5179
MRF559
MRF559
2N3866A
MRF555
MRF555T
MRF559
MRF559
MRF8372,R1,R2
MRF557
MRF557T
NPN 175
NPN 175
NPN 175
NPN 175
NPN 175
NPN 175
NPN 200
NPN 5 1 2
NPN 5 1 2
NPN 4 0 0
NPN 4 7 0
NPN 4 7 0
NPN 8 7 0
NPN 8 7 0
NPN 8 7 0
NPN 8 7 0
NPN 8 7 0
0.15
1
1.5
1.5
1.75
3
18
10
11.5
11.5
11.5
7.8
20
60
50
60
50
50
50
12
12
12.5
12.5
12.5
12.5
6
20
20
16
16
16
18
12
16
16
30
30
16
16
16
16
16
16
16
400
400
500
500
330
1000
50
150
150
400
400
400
400
150
150
200
400
400
TO-39
TO-39
SO-8
TO-72
TO-72
TO-39
TO-72
TO-72
MA C R O T
2N5109
MRF5943C
MRF5943, R1, R2
2N5179
2N2857
MRF517
MRF904
2N6304
BFR91
BFR96
MRF5812, R1, R2
MRF581A
BFR90
B F Y 90
MRF914
MRF581
MRF586
MRF951
MRF571
BFR91
BFR90
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
200
200
200
200
300
300
450
450
500
500
500
500
500
500
500
500
500
3
3.4
3.4
4.5
5.5
7.5
1.5
5
1.9
2
2
2
2.4
2.5
2.5
2.5
3
1.3
1.5
2.5
3
10
30
30
1.5
50
50
5
2
2
10
50
50
2
2
5
50
90
5
10
2
2
15
15
15
6
6
15
6
5
5
10
10
10
10
5
10
10
15
6
6
5
10
1200
1000
1300
900
1600
4600
4000
1400
5000
500
5000
5000
5000
1300
4500
5000
4500
8000
8000
5000
5000
3.5
1
1
3
1
1
1
2.6
0.5
0.5
1
1
1.5
1.5
0.5
0.5
0.75
1.5
1.5
10
13
10
10
11
11
6.5
9.5
8
8
8
65
60
45
45
50
50
70
65
55
55
55
7.5
12.5
28
28
12.5
12.5
7.5
12.5
12.5
12.5
12.5
MA C R O T
SO-8
MA C R O X
Macro
TO-72
TO-72
MA C R O X
TO-39
MA C R O X
MA C R O X
MA C R O T
MA C R O T
M R F 3 8 6 6 , R 1 , R 2 NPN 4 0 0
2.2
0.45
1
1
1
NPN 1000
NPN 1000
NPN 1000
NPN 1000
TO-39
TO-39
MRF545
MRF544
PNP
NPN
14
13.5
1400
1500
RF (Low Power PA / General Purpose) Selection Guide
RF (LNA / General Purpose) Selection Guide
Low Cost RF Plastic Package Options
1
2
3
3
4
1
2
3
8
1
5
4
Macro T
2N4427.PDF 6-25-03
Macro X
Power
SO-8
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct
Ccb(pF)
BVCEO
IC max (mA)
20
30
30
12
15
25
15
15
12
15
15
15
1
15
15
12
16
17
10
10
12
15
400
400
400
50
40
150
30
50
35
100
200
200
30
50
40
200
200
100
70
35
30
Pout (watts)
Freq (MHz)
NF
(dB) (mA)
NF IC
NF VCE
Packag
Device
Ftau (MHz)
GPE (dB)
GPE VCC
Package
Device
BVCEO
Type
GN (dB)
Type
2
70 400
70 400
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