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2N7000-G-P002

Description
MOSFET N-Channel MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size435KB,5 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
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2N7000-G-P002 Overview

MOSFET N-Channel MOSFET

2N7000-G-P002 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerMicrochip
Product CategoryMOSFET
RoHSDetails
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-92-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage60 V
Id - Continuous Drain Current200 mA
Rds On - Drain-Source Resistance5.3 Ohms
ConfigurationSingle
PackagingReel
Transistor Type1 N-Channel
Factory Pack Quantity2000
Unit Weight0.016000 oz
2N7000
N-Channel Enhancement-Mode
Vertical DMOS FETs
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
Complementary N- and P-Channel devices
General Description
The Supertex 2N7000 is an enhancement-mode (normally-
off) transistor that utilizes a vertical DMOS structure
and Supertex’s well-proven silicon-gate manufacturing
process. This combination produces a device with the
power handling capabilities of bipolar transistors, and the
high input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS
structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Applications
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Ordering Information
Device
2N7000-G
Package
Option
TO-92
BV
DSS
/BV
DGS
(V)
R
DS(ON)
(max)
(Ω)
I
D(ON)
(min)
(mA)
60
5.0
75
-G indicates package is RoHS compliant (‘Green’)
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature*
Value
BV
DSS
BV
DGS
±30V
-55°C to +150°C
+300°C
Pin Configuration
SOURCE
DRAIN
GATE
TO-92
2N
7 0 0 0
YYWW
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
*
Distance of 1.6mm from case for 10 seconds.
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
TO-92
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com

2N7000-G-P002 Related Products

2N7000-G-P002 2N7000 2N7000-G P013 2N7000-G P005
Description MOSFET N-Channel MOSFET MOSFET 60V 5Ohm MOSFET N-Channel MOSFET MOSFET N-Channel MOSFET
Product Category MOSFET MOSFET MOSFET MOSFET
Configuration Single Single Single Single
Product Attribute Attribute Value Attribute Value Attribute Value -
Manufacturer Microchip Microchip Microchip -
RoHS Details N Details -
Technology Si Si Si -
Mounting Style Through Hole Through Hole Through Hole -
Package / Case TO-92-3 TO-92-3 TO-92-3 -
Number of Channels 1 Channel 1 Channel 1 Channel -
Transistor Polarity N-Channel N-Channel N-Channel -
Vds - Drain-Source Breakdown Voltage 60 V 60 V 60 V -
Id - Continuous Drain Current 200 mA 200 mA 200 mA -
Rds On - Drain-Source Resistance 5.3 Ohms 5 Ohms 5.3 Ohms -
Transistor Type 1 N-Channel 1 N-Channel 1 N-Channel -
Factory Pack Quantity 2000 500 2000 -
Unit Weight 0.016000 oz 0.007760 oz 0.016000 oz -
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