2N7000-G P005 datasheet, PDF - EEWORLD Datasheet

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2N7000-G P005: DescriptionMOSFET N-Channel MOSFET; Categorysemiconductor Discrete semiconductor The transistor MOSFET; File Size435KB，5 Pages; ManufacturerMicrochip; Websitehttps://www.microchip.com; Environmental Compliance

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2N7000-G P005 Overview

MOSFET N-Channel MOSFET

2N7000-G P005 Parametric

Parameter Name	Attribute value
Maker	Microchip
Product Category	MOSFET
technology	Si
Installation style	Through Hole
Package/box	TO-92-3
Number of channels	1 Channel
Transistor polarity	N-Channel
Vds - drain-source breakdown voltage	60 V
Id-continuous drain current	200 mA
Rds On - drain-source on-resistance	5.3 Ohms
Configuration	Single
Encapsulation	Cut Tape
Encapsulation	Reel
Transistor type	1 N-Channel
Factory packaging quantity	2000
unit weight	453.600 mg

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2N7000

N-Channel Enhancement-Mode

Vertical DMOS FETs

Features

►

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low C

ISS

and fast switching speeds

Excellent thermal stability

Integral source-drain diode

High input impedance and high gain

Complementary N- and P-Channel devices

General Description

The Supertex 2N7000 is an enhancement-mode (normally-

off) transistor that utilizes a vertical DMOS structure

and Supertex’s well-proven silicon-gate manufacturing

process. This combination produces a device with the

power handling capabilities of bipolar transistors, and the

high input impedance and positive temperature coefﬁcient

inherent in MOS devices. Characteristic of all MOS

structures, this device is free from thermal runaway and

thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

very low threshold voltage, high breakdown voltage, high

input impedance, low input capacitance, and fast switching

speeds are desired.

Applications

►

Motor controls

Converters

Ampliﬁers

Switches

Power supply circuits

Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

Ordering Information

Device

2N7000-G

Package

Option

TO-92

DSS

/BV

DGS

(V)

DS(ON)

(max)

(Ω)

D(ON)

(min)

(mA)

5.0

-G indicates package is RoHS compliant (‘Green’)

Absolute Maximum Ratings

Parameter

Drain-to-source voltage

Drain-to-gate voltage

Gate-to-source voltage

Operating and storage temperature

Soldering temperature*

Value

DSS

DGS

±30V

-55°C to +150°C

+300°C

Pin Conﬁguration

SOURCE

DRAIN

GATE

TO-92

7 0 0 0

YYWW

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

Distance of 1.6mm from case for 10 seconds.

YY = Year Sealed

WW = Week Sealed

= “Green” Packaging

TO-92

●

1235 Bordeaux Drive, Sunnyvale, CA 94089

●

Tel: 408-222-8888

●

www.supertex.com

2N7000-G P005 Related Products

	2N7000-G P005	2N7000	2N7000-G-P002	2N7000-G P013
Description	MOSFET N-Channel MOSFET	MOSFET 60V 5Ohm	MOSFET N-Channel MOSFET	MOSFET N-Channel MOSFET
Product Category	MOSFET	MOSFET	MOSFET	MOSFET
Configuration	Single	Single	Single	Single
Product Attribute	-	Attribute Value	Attribute Value	Attribute Value
Manufacturer	-	Microchip	Microchip	Microchip
RoHS	-	N	Details	Details
Technology	-	Si	Si	Si
Mounting Style	-	Through Hole	Through Hole	Through Hole
Package / Case	-	TO-92-3	TO-92-3	TO-92-3
Number of Channels	-	1 Channel	1 Channel	1 Channel
Transistor Polarity	-	N-Channel	N-Channel	N-Channel
Vds - Drain-Source Breakdown Voltage	-	60 V	60 V	60 V
Id - Continuous Drain Current	-	200 mA	200 mA	200 mA
Rds On - Drain-Source Resistance	-	5 Ohms	5.3 Ohms	5.3 Ohms
Transistor Type	-	1 N-Channel	1 N-Channel	1 N-Channel
Factory Pack Quantity	-	500	2000	2000
Unit Weight	-	0.007760 oz	0.016000 oz	0.016000 oz

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