PD 2.506
PRELIMINARY
HFA50HF20
Ultrafast, Soft Recovery Diode
CATHODE
HEXFRED
Features
•
•
•
•
•
TM
V
R
= 200V
V
F
= 0.96V
Q
rr
* = 640nC
di
(rec)M
/dt * = 980A/µs
*
125°C
Reduced RFI and EMI
Reduced Snubbing
Extensive Characterization of Recovery Parameters
Hermetic
Surface Mount
ANODE
ANODE
Description
HEXFRED
T M
diodes are optimized to reduce losses and
EMI/RFI in high frequency power conditioning systems.
An extensive characterization of the recovery behavior
for different values of current, temperature and di/dt
simplifies the calculations of losses in the operating
conditions. The softness of the recovery eliminates the
need for a snubber in most applications. These devices
are ideally suited for power converters, motors drives and
other applications where switching losses are significant
portion of the total losses.
SMD -1
Absolute Maximum Ratings (per Leg)
Parameter
V
R
I
F
@ T
C
= 100°C
I
FSM
@ T
C
= 25°C
P
D
@ T
C
= 25°C
T
J
T
STG
D.C. Reverse Voltage
Continuous Forward Current
Single Pulse Forward Current
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max.
200
50
600
125
-55 to +150
Units
V
A
W
°C
Thermal - Mechanical Characteristics
Parameter
R
θJC
Wt
Junction-to-Case, Single Leg Conducting
Weight
Typ.
—
2.6
Max.
1.0
—
Units
°C/W
g
Note:
D.C. = 50% rect. wave
1/2 sine wave, 60 Hz , P.W. = 8.33 ms
4/7/97
HFA50HF20
Electrical Characteristics (per Leg) @ T
J
= 25°C (unless otherwise specified)
Parameter
V
BR
V
FM
Cathode Anode Breakdown Voltage
Max Forward Voltage
Min. Typ. Max. Units
200
—
—
—
0.88 0.96
0.98 1.11
0.75 0.84
—
10
—
1.0
170 310
2.8
—
V
V
µA
mA
pF
nH
Test Conditions
I
R
= 100µA
I
F
= 50A
See Fig. 1
I
F
= 100A
I
F
= 50A, T
J
= 125°C
V
R
= V
R
Rated
See Fig. 2
T
J
= 125°C, V
R
= 160V
V
R
= 200V
See Fig. 3
Measured from center of bond pad to
end of anode bonding wire
I
RM
C
T
L
S
Max Reverse Leakage Current
Junction Capacitance
Series Inductance
—
—
—
—
Dynamic Recovery Characteristics (per Leg) @ T
J
= 25°C (unless otherwise specified)
Parameter
t
rr
t
rr1
t
rr2
I
RRM1
I
RRM2
Q
rr1
Q
rr2
di
(rec)M
/dt1
di
(rec)M
/dt2
Reverse Recovery Time
Min. Typ. Max. Units
—
—
—
—
—
—
—
—
—
35
—
62
93
ns
98 150
10
18
A
14
26
260 390
nC
640 960
600 900
A/µs
980 1500
Test Conditions
I
F
= 1.0A, di
f
/dt = 200A/µs, V
R
= 30V
T
J
= 25°C See Fig.
T
J
= 125°C
5
I
F
= 50A
T
J
= 25°C See Fig.
T
J
= 125°C
6
V
R
= 200V
T
J
= 25°C See Fig.
T
J
= 125°C
7
di
f
/dt = 200A/µs
T
J
= 25°C
See Fig.
T
J
= 125°C
8
Peak Recovery Current
Reverse Recovery Charge
Peak Rate of Fall of Recovery Current
During t
b
Lead Assignments :
1 - Cathode
2, 3 - Anode
IR Case Style SMD-1
Dimensions in millimeters and (inches)
HFA50HF20
1000
1000
Reverse Current - I
R
(µA)
100
10
1
0.1
0.01
0.001
0
TJ = 150°C
TJ = 125°C
TJ = 100°C
TJ = 75°C
TJ = 50°C
T J = 25°C
A
40
80
120
160
200
F
(A)
100
T
J
= 150°C
T
J
= 125°C
T
J
= 25°C
Instantaneous Forward Current - I
Reverse Voltage - V
R
( V )
10
10000
Fig. 2
- Typical Reverse Current vs. Reverse
Voltage
A
Junction Capacitance - C
T
(pF)
T
J
= 25°C
1000
1
0.0
0.4
0.8
1.2
1.6
2.0
Forward Voltage Drop - V
(V)
FM
Fig. 1
- Maximum Forward Voltage Drop
vs. Instantaneous Forward Current
100
1
10
100
A
1000
Reverse Voltage - V
R
( V )
Fig. 3
- Typical Junction Capacitance vs.
Reverse Voltage
10
(K/W)
thJC ( K/W )
thJC
1
D
D
D
D
0.1
=
=
=
=
0.50
0.33
0.25
0.17
P
DM
Thermal Impedance - Z
D = 0.08
t
1
t
2
0.01
Single Pulse
(Thermal Resistance)
N o tes :
1 . D u ty fa cto r D = t / t
1 2
2. P eak T = P
x Z
+ T
J
DM
th JC
C
0.001
0.01
0.1
1
0.001
0.00001
0.0001
Fig. 4
- Maximum Thermal Impedance Z
thjc
Characteristics
t
1
, Rectangular Pulse Duration (Seconds)
HFA50HF20
110
100
V
R
= 200V
T
J
= 125°C
T
J
= 25°C
100
I
F
= 100A
I
F
= 50A
90
I
F
= 25A
I
F
= 100A
I
F
= 50A
I
IRRM
- (A)
t
rr
- (ns)
80
10
I
F
= 25A
70
60
50
100
A
V
R
= 200V
T
J
= 125°C
T
J
= 25°C
1
100
1000
A
di f /dt - (A/µs)
1000
di
f
/dt - (A/µs)
Fig. 5
- Typical Reverse Recovery vs. di
f
/dt,
Fig. 6
- Typical Recovery Current vs. di
f
/dt,
3000
10000
V
R
= 200V
T
J
= 125°C
T
J
= 25°C
V
R
= 200V
T
J
= 125°C
T
J
= 25°C
I
F
= 25A
I
F
= 50A
I
F
= 100A
2000
Q
rr
- (nC)
I
F
= 50A
di(rec)M/dt - (A/µs)
I
F
= 100A
1000
I
F
= 25A
1000
0
100
di f/dt - (A/µs)
1000
100
100
A
1000
di
f
/dt - (A/µs)
Fig. 7
- Typical Stored Charge vs. di
f
/dt
Fig. 8
- Typical di
(rec)M
/dt vs. di
f
/dt
HFA50HF20
3
I
F
t
rr
t
a
t
b
4
R E VER SE R EC O VER Y C IR C U IT
V
R
= 20 0 V
0
Q
rr
I
RRM
2
0 .5 I
R R M
di(r ec) M/dt
0.75 I
R R M
5
0 .0 1
Ω
L = 70µH
D .U.T.
D
G
IR F P 2 5 0
S
1
d i
f
/dt
4. Q
rr
- Area under curve defined by t
rr
and I
RRM
t
rr
X I
RRM
Q
rr
=
2
5. di
(rec)M
/dt - Peak rate of change of
current during t
b
portion of t
rr
d if /d t
A DJU S T
1. di
f
/dt - Rate of change of current
through zero crossing
2. I
RRM
- Peak reverse recovery current
3. trr - Reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current
Fig. 9
- Reverse Recovery Parameter Test
Circuit
Fig. 10
- Reverse Recovery Waveform and
Definitions
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS:
Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA:
7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY:
Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST:
K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA:
315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
4/97
京公网安备 11010802033920号
EEWORLD
