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B12V114

Description
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
File Size35KB,7 Pages
ManufacturerETC
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B12V114 Overview

NPN LOW NOISE SILICON MICROWAVE TRANSISTOR

BIPOLARICS, INC.
Part Number B12V114
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
PRODUCT DATA SHEET
FEATURES:
DESCRIPTION AND APPLICATIONS:
Bipolarics' B12V114 is a high performance silicon bipolar
transistor intended for use in low noise applications at VHF,
UHF and microwave frequencies. These applications include
narrowband and wideband amplifiers, oscillators and
micropower transmitters. Typical applications include cellu-
lar telephone preamplifiers/mixers, CATV amplifiers and
Part 15 receivers and transmitters. Commercial plastic, sur-
face mount and hermetic (including Stripline) packaging
options make this device very versatile; from consumer prod-
uct to space flight.
High Gain Bandwidth Product
f = 10 GHz typ @ I
C
= 25mA
t
Low Noise Figure
1.4 dB typ at 1.0 GHz
1.7 dB typ at 2.0 GHz
High Gain
| S
21
|
2
=
16.9 dB @ 1.0 GHz
12.0 dB @ 2.0 GHz
Dice, Plastic, Hermetic and Surface
Mount packages available
Absolute Maximum Ratings:
SYMBOL
PARAMETERS
RATING
UNITS
V
CBO
V
CEO
V
EBO
I
C
T (1)
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Temperature
Storage Temperature
20
12
1.5
60
200
-65 to 150
V
V
V
mA
o
C
o
C
PERFORMANCE DATA:
Electrical Characteristics (T
A
= 25
o
C)
SYMBOL
PARAMETERS & CONDITIONS
V
CE
= 8V, I
C
= 25 mA unless stated
(1) Depends on package
UNIT
MIN.
TYP.
MAX.
f
t
Gain Bandwidth Product
Insertion Power Gain:
f = 1.0 GHz
f = 2.0 GHz
f = 1.0 GHz
f = 1.0 GHz
GHz
dB
dB
dBm
dBm
10.0
16.9
12.0
18.0
15.0
|S
21
|
2
P
1d B
G
1d B
NF
h
FE
I
CBO
I
EBO
C
CB
Power output at 1dB compression:
Gain at 1dB compression:
Noise Figure: V
CE
= 8V, I
C
= 10mA
Forward Current Transfer Ratio:
V
CE
= 8V, I
C
=25 mA
Collector Cutoff Current : V
CB
= 8V
Emitter Cutoff Current : V
EB
= 1V
Collector Base Capacitance: V
CB
= 8V
f = 1.0 GHz
f = 1MHz
dB
30
1.4
150
300
µA
µA
f = 1MHz
pF
0.25
0.2
1.0

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