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DN1590

Description
360 mA, 90 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-243AA
Categorysemiconductor    Discrete semiconductor   
File Size361KB,3 Pages
ManufacturerSUTEX
Websitehttp://www.supertex.com/
Download Datasheet Parametric Compare View All

DN1590 Overview

360 mA, 90 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-243AA

DN1590 Parametric

Parameter NameAttribute value
Number of terminals3
Minimum breakdown voltage90 V
Processing package descriptionROHS COMPLIANT PACKAGE-3
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formFLAT
terminal coatingMATTE TIN
Terminal locationSINGLE
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE WITH BUILT-IN DIODE
Shell connectionDRAIN
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Channel typeN-CHANNEL
field effect transistor technologyMETAL-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeGENERAL PURPOSE SMALL SIGNAL
Maximum leakage current0.3600 A
feedback capacitor15 pF
Maximum drain on-resistance6 ohm
DN1509
N-Channel Depletion-Mode Vertical DMOS FET
Features
High input impedance
Low input capacitance
Fast switching speeds
Low ON-resistance
Free from secondary breakdown
Low input and output leakages
General Description
The Supertex DN1509 is suitable for high voltage transient
protection for LDO in automobile applications during “load
dump” conditions.
This low threshold, depletion-mode (normally-on)
transistor utilizes an advanced vertical DMOS structure
and Supertex’s well-proven silicon-gate manufacturing
process. This combination produces a device with the
power handling capabilities of bipolar transistors and
with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all
MOS structures, this device is free from thermal runaway
and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Applications
Normally-on switches
Battery operated systems
Converters
Linear amplifiers
Constant current sources
Telecom
Ordering Information
Device
DN1509
Package Option
TO-243AA (SOT-89)
DN1509N8-G
Product marking for TO-243AA:
BV
DSX
/BV
DGX
90V
R
DS(ON)
(max)
6.0Ω
I
DSS
(typ)
540mA
where
DN5A
= 2-week alpha date code
-G indicates package is RoHS compliant (‘Green’)
Absolute Maximum Ratings
Parameter
Drain to source voltage
Drain to gate voltage
Gate to source voltage
Operating and storage temperature
Soldering temperature
1
Value
BV
DSX
BV
DGX
±20V
-55°C to +150°C
+300°C
Pin Configuration
D
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Note 1.
Distance of 1.6mm from case for 10 seconds.
G
D
(Top View)
S
TO-243AA (SOT-89)

DN1590 Related Products

DN1590 DN1509N8-G
Description 360 mA, 90 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-243AA 360 mA, 90 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-243AA
Number of terminals 3 3
Minimum breakdown voltage 90 V 90 V
Processing package description ROHS COMPLIANT PACKAGE-3 ROHS COMPLIANT PACKAGE-3
Lead-free Yes Yes
EU RoHS regulations Yes Yes
state ACTIVE ACTIVE
packaging shape RECTANGULAR RECTANGULAR
Package Size SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes
Terminal form FLAT FLAT
terminal coating MATTE TIN MATTE TIN
Terminal location SINGLE SINGLE
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY
structure SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Shell connection DRAIN DRAIN
Number of components 1 1
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Channel type N-CHANNEL N-CHANNEL
field effect transistor technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
operating mode ENHANCEMENT ENHANCEMENT
Transistor type GENERAL PURPOSE SMALL SIGNAL GENERAL PURPOSE SMALL SIGNAL
Maximum leakage current 0.3600 A 0.3600 A
feedback capacitor 15 pF 15 pF
Maximum drain on-resistance 6 ohm 6 ohm
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