Product Brief
PE42612 Flip Chip
SP4T UltraCMOS™ 2.6 V Switch
100 – 3000 MHz
Figure 1. Functional Diagram
Features
•
Two pin CMOS logic control inputs
•
Supports 1.8 V Control Logic
•
Low TX insertion loss: 0.55 dB at
TX1
RX1
•
•
•
•
•
•
TX2
RX2
CMOS
Control/Driver
and ESD
V1
V2
900 MHz, 0.70 dB at 1900 MHz
Isolation of 39 dB at 900 MHz, 31 dB at
1900 MHz
Low harmonics 2f
o
= -82 dBc and
3f
o
= -74 dBc at 35 dBm input power
1500 V HBM ESD tolerance
Built in CMOS decoder/driver
RX SAW over voltage protection circuit
No blocking capacitors required
Figure 2. Die Top View
Product Description
The PE42612 SP4T RF UltraCMOS™ Flip
Chip Switch is designed specifically to address
the needs of the antenna switch module
market for GSM Handsets. On-chip CMOS
decode logic is used to facilitate two-pin, low
voltage CMOS control inputs. High ESD
tolerance of 1500 V at all ports, no blocking
capacitor requirements and on-chip SAW filter
over-voltage protection devices make this the
ultimate in integration and ease of use.
The PE42612 is manufactured on Peregrine’s
UltraCMOS™ process, a patented variation of
silicon-on-insulator (SOI) technology on a
sapphire substrate, offering the performance
of GaAs with the economy and integration of
conventional CMOS.
10
TX1
11
N/C
12
ANT
1
RX1
9
GND
2
GND
8
TX2
GND
7
VDD
6
V2
5
3
RX2
V1
4
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Contact sales@psemi.com for full version of datasheet
©2006 Peregrine Semiconductor Corp. All rights reserved.
Page 1 of 4
PE42612
Product Brief
Table 1. PE42612 Electrical Specifications: Temp = 25°C, V
DD
= 2.6 V
Parameter
Operational Frequency
ANT - TX - 850 / 900 MHz
ANT - TX - 1800 / 1900 MHz
ANT - RX - 850 / 900 MHz
ANT - RX - 1800 / 1900 MHz
TX - RX - 850 / 900 MHz (TX ON)
TX - RX - 1800 / 1900 MHz (TX ON)
TX1 - TX2 - 850 / 900 MHz (TX1 ON)
TX1 - TX2 - 1800 / 1900 MHz (TX1 ON)
850 / 900 MHz
1800 / 1900 MHz
35 dBm TX Input Power - 850 / 900 MHz
33 dBm TX Input Power - 1800 / 1900 MHz
35 dBm TX Input Power - 850 / 900 MHz
33 dBm TX Input Power - 1800 / 1900 MHz
(10-90%) (90-10%) RF
37
29
33
26
18
14
Condition
Min
100
Typ
Max
3000
Unit
MHz
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
Insertion Loss
0.55
0.7
0.85
1.05
39
31
35
28
20
16
-82
-89
-74
-68
2
0.65
0.8
1.0
1.2
Isolation
Return Loss
2nd Harmonic
1,2
3rd Harmonic
1,2
Switching time
Notes:
-78
-82
-69
-65
3
dBc
dBc
dBc
dBc
µs
1. Measured in Pulsed Wave Mode.
2. Assumes RF input duty cycle of 50% and 4620
µs,
measured per 3GPP TS 45.005
Table 2. Operating Ranges
Parameter
Temperature range
V
DD
Supply Voltage
I
DD
Power Supply Current
(V
DD
= 2.6 V)
TX input power (VSWR
≤
3:1)
824-915 MHz
TX input power (VSWR
≤
3:1)
1710-1910 MHz
Table 3. Absolute Maximum Ratings
Symbol
V
DD
V
I
Parameter/Conditions
Power supply voltage
Voltage on any DC input
Storage temperature range
Operating temperature range
TX input power (50
Ω)
3,4
824-915 MHz
TX input power (50
Ω)
3,4
1710-1910 MHz
RX input power (50
Ω)
TX input power (VSWR = (∞:1)
3,4
824-915 MHz
TX input power (VSWR = (∞:1)
3,4
1710-1910 MHz
ESD Voltage (HBM, MIL_STD
883 Method 3015.7)
V
ESD
ESD Voltage (MM, JEDEC,
JESD22-A114-B)
Min
-0.3
-0.3
-65
-40
Max
4.0
V
DD
+
0.3
+150
+85
+38
+36
+23
+35
dBm
+33
1500
100
V
V
dBm
Units
V
V
°C
°C
-40
2.4
2.6
11
+85
2.95
25
+35
°C
V
µA
T
ST
T
OP
Symbol Min Typ Max Units
T
OP
V
DD
I
DD
P
IN
+33
P
IN
V
IH
V
IL
1.40
0.40
1
+20
dBm
RX input power
(VSWR
≤1:1)
Control Voltage High
Control Voltage Low
Control Line Current
dBm
V
V
µA
P
IN
P
IN
(∞:1)
Note:
3. Assumes RF input duty cycle of 50% and 4620
µs.
4. V
DD
within operating range specified in Table 4.
Absolute Maximum Ratings are those values listed in
the above table. Exceeding these values may cause
permanent device damage. Functional operation
should be restricted to the limits in the DC Electrical
Specifications table. Exposure to absolute maximum
ratings for extended periods may affect device
reliability.
©2006 Peregrine Semiconductor Corp. All rights reserved.
Page 2 of 4
Document No. 70-0217-01
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UltraCMOS™ RFIC Solutions
Contact sales@psemi.com for full version of datasheet
PE42612
Product Brief
Figure 3. Pin Configuration (Ball-Side Up)
N/C
TX1
10
11
ANT
12
1
RX1
Table 5. Truth Table
Path
ANT - RX1
ANT - RX2
ANT - TX1
ANT - TX2
V2
0
0
1
1
V1
0
1
0
1
GND
9
PE42612
Die
2
GND
Electrostatic Discharge (ESD) Precautions
3
RX2
TX2
8
GND
7
6
VDD
5
V2
4
V1
When handling this UltraCMOS™ device, observe
the same precautions that you would use with other
ESD-sensitive devices. Although this device
contains circuitry to protect it from damage due to
ESD, precautions should be taken to avoid
exceeding the specified rating.
Table 4. Pin Descriptions
Pin No.
1
5
2
3
5
4
5
6
7
8
5
9
10
5
11
12
5
Note:
Pin Name
RX1
GND
RX2
V1
V2
VDD
GND
TX2
GND
TX1
N/C
ANT
RF I/O – RX1
Ground
RF I/O – RX2
Switch control input, CMOS logic level
Switch control input, CMOS logic level
Supply
Ground
RF I/O - TX2
Ground
RF I/O - TX1
No Connect – Pin to be connected to an
electrically isolated low capacitance pad
RF Common – Antenna Input
Description
Latch-Up Avoidance
Unlike conventional CMOS devices, UltraCMOS™
devices are immune to latch-up.
5. Blocking capacitors needed only when non-zero DC
voltage present.
Table 6. Ordering Information
Order Code
PE42612-90 (Unitive)
PE42612-91 (FCI)
PE42612-00
Die ID
C9817_1
C9817_1
C9817_1
Description
PE42612-DIE-D
PE42612-DIE-D
PE42612-DIE-1H
Package
Film Frame
Film Frame
Evaluation Kit
Shipping Method
Wafer (Gross Die / Wafer Quantity)
Wafer (Gross Die / Wafer Quantity)
1 / Box
Document No. 70-0217-01
│
www.psemi.com
Contact sales@psemi.com for full version of datasheet
©2006 Peregrine Semiconductor Corp. All rights reserved.
Page 3 of 4
PE42612
Product Brief
Sales Offices
The Americas
Peregrine Semiconductor Corporation
9450 Carroll Park Drive
San Diego, CA 92121
Tel: 858-731-9400
Fax: 858-731-9499
Peregrine Semiconductor, Asia Pacific (APAC)
Shanghai, 200040, P.R. China
Tel: +86-21-5836-8276
Fax: +86-21-5836-7652
Peregrine Semiconductor, Korea
#B-2607, Kolon Tripolis, 210
Geumgok-dong, Bundang-gu, Seongnam-si
Gyeonggi-do, 463-943 South Korea
Tel: +82-31-728-3939
Fax: +82-31-728-3940
Europe
Peregrine Semiconductor Europe
Bâtiment Maine
13-15 rue des Quatre Vents
F-92380 Garches, France
Tel: +33-1-4741-9173
Fax : +33-1-4741-9173
Peregrine Semiconductor K.K., Japan
Teikoku Hotel Tower 10B-6
1-1-1 Uchisaiwai-cho, Chiyoda-ku
Tokyo 100-0011 Japan
Tel: +81-3-3502-5211
Fax: +81-3-3502-5213
Space and Defense Products
Americas:
Tel: 858-731-9453
Europe, Asia Pacific:
180 Rue Jean de Guiramand
13852 Aix-En-Provence Cedex 3, France
Tel: +33-4-4239-3361
Fax: +33-4-4239-7227
For a list of representatives in your area, please refer to our Web site at:
www.psemi.com
Data Sheet Identification
Advance Information
The product is in a formative or design stage. The data
sheet contains design target specifications for product
development. Specifications and features may change in
any manner without notice.
The information in this data sheet is believed to be reliable.
However, Peregrine assumes no liability for the use of this
information. Use shall be entirely at the user’s own risk.
No patent rights or licenses to any circuits described in this
data sheet are implied or granted to any third party.
Peregrine’s products are not designed or intended for use in
devices or systems intended for surgical implant, or in other
applications intended to support or sustain life, or in any
application in which the failure of the Peregrine product could
create a situation in which personal injury or death might occur.
Peregrine assumes no liability for damages, including
consequential or incidental damages, arising out of the use of
its products in such applications.
The Peregrine name, logo, and UTSi are registered trademarks
and UltraCMOS and HaRP are trademarks of Peregrine
Semiconductor Corp.
Preliminary Specification
The data sheet contains preliminary data. Additional data
may be added at a later date. Peregrine reserves the right
to change specifications at any time without notice in order
to supply the best possible product.
Product Specification
The data sheet contains final data. In the event Peregrine
decides to change the specifications, Peregrine will notify
customers of the intended changes by issuing a DCN
(Document Change Notice).
©2006 Peregrine Semiconductor Corp. All rights reserved.
Page 4 of 4
Document No. 70-0217-01
│
UltraCMOS™ RFIC Solutions
Contact sales@psemi.com for full version of datasheet
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