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129NQ

Description
120 A, 150 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size112KB,4 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
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129NQ Overview

120 A, 150 V, SILICON, RECTIFIER DIODE

Bulletin PD-20719 rev. A 03/01
129NQ...(R) SERIES
SCHOTTKY RECTIFIER
120 Amp
D-67
Major Ratings and Characteristics
Characteristics
I
F(AV)
Rectangular
waveform
V
RRM
range
I
FSM
V
F
T
J
@ tp = 5 µs sine
@120Apk, T
J
=125°C
range
Description/Features
The 129NQ... (R) high current Schottky rectifier module series
has been optimized for low reverse leakage at high
temperature. The proprietary barrier technology allows for
reliable operation up to 175° C junction temperature. Typical
applications are in switching power supplies, converters, free-
wheeling diodes, and reverse battery protection.
175° C T
J
operation
Unique high power, Half-Pak module
Replaces two parallel DO-5's
Easier to mount and lower profile than DO-5's
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
129NQ...(R) Units
120
A
135 to 150
10000
0.74
- 55 to 175
V
A
V
°C
129NQ150
Lug Terminal Anode
Base Cathode
129NQ150R
Lug Terminal Cathode
Base Anode
Outline D-67 HALF PAK Module
Dimensions in millimeters and (inches)
www.irf.com
1

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