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IRL2505LPBF

Description
104 A, 55 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
CategoryDiscrete semiconductor    The transistor   
File Size290KB,10 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

IRL2505LPBF Overview

104 A, 55 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB

IRL2505LPBF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
Parts packaging codeTO-262AA
package instructionLEAD FREE, PLASTIC, TO-262, 3 PIN
Contacts3
Reach Compliance Code_compli
ECCN codeEAR99
Other featuresLOGIC LEVEL COMPATIBLE, HIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas)500 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage55 V
Maximum drain current (Abs) (ID)104 A
Maximum drain current (ID)104 A
Maximum drain-source on-resistance0.01 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-262AA
JESD-30 codeR-PSIP-T3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)200 W
Maximum pulsed drain current (IDM)360 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn) - with Nickel (Ni) barrie
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Logic-Level Gate Drive
l
Advanced Process Technology
l
Surface Mount (IRL2505S)
l
Low-profile through-hole (IRL2505L)
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
l
Lead-Free
Description
l
HEXFET Power MOSFET
D
IRL2505LPbF
IRL2505SPbF
®
V
DSS
= 55V
R
DS(on)
= 0.008Ω
PD - 95577
G
I
D
= 104A
†
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRL2505L) is available for low-
profile applications.
D 2 Pak
TO-262
Absolute Maximum Ratings
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V…
Continuous Drain Current, V
GS
@ 10V…
Pulsed Drain Current
…
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚…
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
ƒ…
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
104
†
74
360
3.8
200
1.3
±16
500
54
20
5.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
–––
–––
Max.
0.75
40
Units
°C/W
07/19/04
www.irf.com
1

IRL2505LPBF Related Products

IRL2505LPBF IRL2505SPBF
Description 104 A, 55 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB 104 A, 55 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
Is it Rohs certified? conform to conform to
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon )
Parts packaging code TO-262AA D2PAK
package instruction LEAD FREE, PLASTIC, TO-262, 3 PIN LEAD FREE, PLASTIC, D2PAK , 3 PIN
Contacts 3 4
Reach Compliance Code _compli not_compliant
ECCN code EAR99 EAR99
Other features LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas) 500 mJ 500 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 55 V 55 V
Maximum drain current (Abs) (ID) 104 A 104 A
Maximum drain current (ID) 104 A 104 A
Maximum drain-source on-resistance 0.01 Ω 0.01 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-262AA TO-263AB
JESD-30 code R-PSIP-T3 R-PSSO-G2
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 3 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 200 W 200 W
Maximum pulsed drain current (IDM) 360 A 360 A
Certification status Not Qualified Not Qualified
surface mount NO YES
Terminal surface Matte Tin (Sn) - with Nickel (Ni) barrie Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal form THROUGH-HOLE GULL WING
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature 30 30
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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