2N7002
OptiMOS Small-Signal-Transistor
Features
• N-channel
• Enhancement mode
• Logic level
• Avalanche rated
• fast switching
• Pb-free lead-plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
™
Product Summary
V
DS
R
DS(on),max
V
GS
=10 V
V
GS
=4.5 V
I
D
60
3
4
0.3
PG-SOT23
3
V
Ω
A
1
2
Type
2N7002
Parameter
Package
PG-SOT-23
Tape and Reel Information
H6327: 3000 pcs/reel
Symbol Conditions
I
D
T
A
=25 °C
T
A
=70 °C
Marking
72s
HalogenFree
Yes
Value
V l
0.30
0.24
1.2
1.3
6
±20
Packing
Non Dry
Unit
A
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
ESD class
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
(1)
I
D,pulse
E
AS
dv /dt
V
GS
T
A
=25 °C
I
D
=0.3 A,
R
GS
=25
Ω
I
D
=0.3 A,
V
DS
=48 V,
di /dt =200 A/µs,
T
j,max
=150 °C
mJ
kV/µs
V
JESD22-A114 (HBM)
P
tot (2)
T
j
,
T
stg
T
A
=25 °C
class 0 (<250V)
0.5
-55 ... 150
55/150/56
W
°C
J-STD20 and JESD22
Rev. 2.4
page 1
2012-09-04
2N7002
Parameter
Symbol Conditions
min.
Thermal characteristics
Thermal resistance,
junction - minimal footprint
(2)
Values
typ.
max.
Unit
R
thJA
-
-
250
K/W
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
V
(BR)DSS
V
GS
= 0 V,
I
D
=250 µA
Drain-source breakdown voltage
60
-
-
V
Gate threshold voltage
V
GS(th)
V
DS
=V
GS
,
I
D
=250 µA
V
DS
=60 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=60 V,
V
GS
=0 V,
T
j
=150 °C
1.5
2.1
2.5
Drain-source leakage current
I
D (off)
-
-
0.1
µA
-
-
5
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=20 V,
V
DS
=0 V
V
GS
=4.5 V,
I
D
=0.25 A
V
GS
=10 V,
I
D
=0.5 A
-
-
-
0.2
1
2.0
1.6
0.36
10
4
3
-
nA
Ω
Transconductance
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=0.24 A
S
Perfomed on a 40x40mm
2
FR4 PCB with both sided Cu sense-force traces, each 1mm wide, 70
μm
thick and 20mm
long.
(2)
Rev. 2.4
page 2
2012-09-04
2N7002
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
I
S
I
S,pulse
V
SD
t
rr
Q
rr
V
GS
=0 V,
I
F
=0.5 A,
T
j
=25 °C
V
R
=30 V,
I
F
=0.5 A,
di
F
/dt =100 A/µs
T
A
=25 °C
-
-
-
-
-
-
-
0.96
8.5
2.4
0.3
1.2
1.2
13
4
V
ns
nC
A
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=48 V,
I
D
=0.5 A,
V
GS
=0 to 10 V
-
-
-
-
0.05
0.2
0.4
4.0
0.1
0.4
0.6
-
V
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=30 V,
V
GS
=10 V,
I
D
=0.5 A,
R
G
=6
Ω
V
GS
=0 V,
V
DS
=25 V,
f
=1 MHz
-
-
-
-
-
-
-
13
4.1
2.0
3.0
3.3
5.5
3.1
20
6
3
4.5
5
9
5
ns
pF
Values
typ.
max.
Unit
Rev. 2.4
page 3
2012-09-04
2N7002
1 Power dissipation
P
tot
=f(T
A
)
2 Drain current
I
D
=f(T
A
);
V
GS
≥10
V
0.35
0.5
0.3
0.4
0.25
P
tot
[W]
I
D
[A]
0.15
0.1
0.05
0
0
40
80
120
160
0
40
80
120
160
0.3
0.2
0.2
0.1
0
T
A
[°C]
T
A
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
A
=25 °C;
D
=0
parameter:
t
p
10
1
4 Max. transient thermal impedance
Z
thJA
=f(t
p
)
parameter:
D
=t
p
/T
10
3
limited by on-state
resistance
10
0
1 µs
0.5
10 µs
100 µs
10
2
0.2
I
D
[A]
1 ms
Z
thJA
[K/W]
10
-1
0.1
0.05
10 ms
0.02
single pulse
10
1
10
-2
DC
0.01
10
-3
1
10
100
10
0
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
V
DS
[V]
t
p
[s]
Rev. 2.4
page 4
2012-09-04
2N7002
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
0.6
5V
7V
2.9 V
3.2 V
3.5 V
4V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
6
0.5
10 V
4.5 V
4V
5
0.4
4
R
DS(on)
[Ω]
I
D
[A]
0.3
3.5 V
3
4.5 V
0.2
3.2 V
2
5V
10 V
7V
0.1
2.9 V
1
0
0
1
2
3
4
5
0
0
0.1
0.2
0.3
0.4
0.5
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
0.6
0.5
0.45
0.5
0.4
0.35
0.3
0.3
0.4
g
fs
[S]
0
1
2
3
4
5
I
D
[A]
0.25
0.2
0.2
0.15
0.1
0.05
0
0
0.0
0.1
0.2
0.3
0.4
0.5
0.1
V
GS
[V]
I
D
[A]
Rev. 2.4
page 5
2012-09-04
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