EEWORLDEEWORLDEEWORLD

Part Number

Search

IPP048N04NGXKSA1

Description
MOSFET N-Ch 40V 70A TO220-3 OptiMOS 3
CategoryDiscrete semiconductor    The transistor   
File Size563KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

IPP048N04NGXKSA1 Online Shopping

Suppliers Part Number Price MOQ In stock  
IPP048N04NGXKSA1 - - View Buy Now

IPP048N04NGXKSA1 Overview

MOSFET N-Ch 40V 70A TO220-3 OptiMOS 3

IPP048N04NGXKSA1 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time18 weeks
Avalanche Energy Efficiency Rating (Eas)35 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage40 V
Maximum drain current (ID)70 A
Maximum drain-source on-resistance0.0048 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)400 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
If^S
$ $   "  " 
"%&$!"#
 $ ;B 1 = -: >5 ;=
'=
>?
7MI[\YMZ
R 3 D D E ; & ( ,  - 8 ,& ),
E H;5: @9
AC
R ( B; ; 76 E @A> 8     5A@G E D
E? K 75:
A9J AC
7C7C
R * F >; 3 55AC @9 E $    
3 ; 76
8
6; A
R' 5: 3 @@7> @AC 3 >7G

?
> 7>
R I57> 93 E 5: 3 C I
'
9H"]\#
B A6F  ( & 
>
7@E 7
97
C 5E
R. 7C > A@ C ; E @57
'
9H"]\#
J AH
7DD3
R

  G > @5: 7 E E

3 3
7D76
R ) 4 877 B3 E@9 + A" , 5A? B; @E
C
>;
>
3
C`XM
#) )

  '

 ' !

)#
b
$=
;0@/?& @9 9 -=
D
)
9H
'
 , A@?
$
9
3I
,(
,&0
/(
J
["
6
8 E C 3 B > EA@D
AC 3 97E B; ;
53
@IKSIOM
=IYSQVO
E=%ID**(%+
(,0C(,C
! -C5 @9 = 5 3>
3 E
(
X
   U  F 7D AE 7C D D 75;;
9
-?:
@> D : H; 7 B 8
76
@IYIUM[MY
 A@E@F D6C ; 5F C
; AF 3 @ C7@E
B`UJWT 4WVLQ[QWVZ
$
9
)
=H


. 

(
8
   U
)
=H


. 

(
8


U

) FD 6C ; 5F C
*#
>76 3 @ C7@E
 G > @5: 7 5F C  D@9> B >7
+#
3 3
C7@E ; 7 FD
 G > @5: 7 7@7C D@9> B >7
3 3
9J ; 7 FD
!3 E D C G E 97
7 AF 57 A>
3
)#
*#
+#
EIT\M
/(
.1
,((
/(
+-
r*(
DVQ[
6
$
9$^bZ`S
$
6H
#
6H
)
=H
(
8
   U
(
8
   U
$
9
 

 

'
=H
  
"
[@
J
$ , - 

3 @6 $  ,   

, 77 8 C  8 ? AC 67E ; ; AC 3 EA@
; 7 AC
9F
7
3 > @8 ? ;
76
, 77 8 C  8 ? AC 67E ; ; AC 3 EA@
; 7
9F
AC
7
3 > @8 ? ;
76
+ 7G

B 97
3




 

IPP048N04NGXKSA1 Related Products

IPP048N04NGXKSA1 IPP048N04N G
Description MOSFET N-Ch 40V 70A TO220-3 OptiMOS 3 MOSFET N-Ch 40V 70A TO220-3 OptiMOS 3
Maker Infineon Infineon
Configuration SINGLE WITH BUILT-IN DIODE Single

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2547  1017  1268  2453  423  52  21  26  50  9 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号