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IPP048N04N G

Description
MOSFET N-Ch 40V 70A TO220-3 OptiMOS 3
Categorysemiconductor    Discrete semiconductor    The transistor    MOSFET   
File Size563KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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IPP048N04N G Overview

MOSFET N-Ch 40V 70A TO220-3 OptiMOS 3

IPP048N04N G Parametric

Parameter NameAttribute value
MakerInfineon
Product CategoryMOSFET
technologySi
Installation styleThrough Hole
Package/boxTO-220-3
Number of channels1 Channel
Transistor polarityN-Channel
Vds - drain-source breakdown voltage40 V
Id-continuous drain current70 A
Rds On - drain-source on-resistance4 mOhms
Vgs th-gate-source threshold voltage2 V
Vgs - gate-source voltage20 V
Qg-gate charge41 nC
Minimum operating temperature- 55 C
Maximum operating temperature+ 175 C
Pd-power dissipation79 W
ConfigurationSingle
channel modeEnhancement
EncapsulationTube
high15.65 mm
length10 mm
seriesOptiMOS 3
Transistor type1 N-Channel
width4.4 mm
Forward transconductance - minimum28 S
Fall time4 ns
Rise Time3.2 ns
Factory packaging quantity500
Typical shutdown delay time19 ns
Typical switch-on delay time13 ns
unit weight6 g
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IPP048N04N G Related Products

IPP048N04N G IPP048N04NGXKSA1
Description MOSFET N-Ch 40V 70A TO220-3 OptiMOS 3 MOSFET N-Ch 40V 70A TO220-3 OptiMOS 3
Maker Infineon Infineon
Configuration Single SINGLE WITH BUILT-IN DIODE

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