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NILMS4501NR2G

Description
Power MOSFET with Current Mirror FET
CategoryDiscrete semiconductor    The transistor   
File Size88KB,9 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric Compare View All

NILMS4501NR2G Overview

Power MOSFET with Current Mirror FET

NILMS4501NR2G Parametric

Parameter NameAttribute value
Brand NameON Semiconduc
Is it lead-free?Lead free
Parts packaging codeSOT
package instructionLEAD FREE, LEADLESS, CASE 508AA-01, PLLP4, SO-8, 4 PIN
Contacts4
Manufacturer packaging code508AA
Reach Compliance Code_compli
ECCN codeEAR99
Is SamacsysN
Avalanche Energy Efficiency Rating (Eas)50 mJ
Shell connectionDRAIN
ConfigurationCURRENT MIRROR WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage24 V
Maximum drain current (Abs) (ID)9.5 A
Maximum drain current (ID)9.5 A
Maximum drain-source on-resistance0.016 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PBCC-N4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)2.7 W
Maximum pulsed drain current (IDM)14 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
NILMS4501N
Power MOSFET with
Current Mirror FET
24 V, 9.5 A, N−Channel, ESD Protected,
1:250 Current Mirror, SO−8 Leadless
http://onsemi.com
N−Channel MOSFET with 1:250 current mirror device utilizing the
latest ON Semiconductor technology to achieve low figure of merit
while keeping a high accuracy in the linear region. This device takes
advantage of the latest leadless QFN package to improve thermal
transfer.
Features
V
DSS
24 V
R
DS(on)
Typ
12 mW @ 4.5 V
I
D
MAX
9.5 A
N−Channel with Current
Mirror FET
Drain
Current Sense MOSFET
"15%
Current Mirror Accuracy
ESD Protected on the Main and the Mirror MOSFET
Low Gate Charge
Pb−Free Package is Available*
Main
Gate
Applications
DC−DC Converters
Voltage Regulator Modules
Small DC Motor Controls
Sense
Source
MARKING
DIAGRAM
PLLP4
CASE 508AA
4501N
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
4501N
AYWW
G
PIN CONNECTIONS
Sense (1)
Drain (4)
Source (2)
Gate (3)
(Bottom View)
ORDERING INFORMATION
Device
NILMS4501NR2
NILMS4501NR2G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Package
PLLP4
PLLP4
(Pb−Free)
Shipping
2500/Tape & Reel
2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NILMS4501N/D
©
Semiconductor Components Industries, LLC, 2006
1
May, 2006 − Rev. 4

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