PBSS4160V
60 V, 1 A NPN low V
CEsat
(BISS) transistor
Rev. 02 — 31 January 2005
Product data sheet
1. Product profile
1.1 General description
Low V
CEsat
(BISS) NPN transistor in a SOT666 plastic package.
PNP complement: PBSS5160V.
1.2 Features
s
s
s
s
s
Low collector-emitter saturation voltage V
CEsat
High collector current capability I
C
and I
CM
High efficiency, reduces heat generation
Reduces printed-circuit board area required
Cost effective replacement for medium power transistor BCP55 and BCX55
1.3 Applications
s
Major application segments:
x
Automotive
x
Telecom infrastructure
x
Industrial
s
Power management:
x
DC-to-DC conversion
x
Supply line switching
s
Peripheral driver
x
Driver in low supply voltage applications (e.g. lamps and LEDs)
x
Inductive load driver (e.g. relays, buzzers and motors)
1.4 Quick reference data
Table 1:
Symbol
V
CEO
I
C
I
CM
R
CEsat
[1]
[2]
Quick reference data
Parameter
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
t = 1 ms or limited by T
j(max)
I
C
= 1 A; I
B
= 100 mA
[2]
Conditions
open base
[1]
Min
-
-
-
-
Typ
-
-
-
200
Max Unit
60
1
2
250
V
A
A
mΩ
Device mounted on an FR4 PCB, single-sided copper, tin-plated, 1 cm
2
collector mounting pad.
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
Philips Semiconductors
PBSS4160V
60 V, 1 A NPN low V
CEsat
(BISS) transistor
2. Pinning information
Table 2:
Pin
1, 2, 5, 6
3
4
Discrete pinning
Description
collector
base
emitter
6
5
4
3
4
sym014
Simplified outline
Symbol
1, 2, 5, 6
1
2
3
SOT666
3. Ordering information
Table 3:
Ordering information
Package
Name
PBSS4160V
-
Description
plastic surface mounted package; 6 leads
Version
SOT666
Type number
4. Marking
Table 4:
Marking codes
Marking code
41
Type number
PBSS4160V
9397 750 14359
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 31 January 2005
2 of 14
Philips Semiconductors
PBSS4160V
60 V, 1 A NPN low V
CEsat
(BISS) transistor
5. Limiting values
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
amb
T
stg
[1]
[2]
Parameter
collector-emitter
voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
peak base current
Conditions
open base
open collector
[1]
[2]
Min
-
-
-
-
-
-
Max
80
60
5
0.9
1
2
300
1
300
500
150
+150
+150
Unit
V
V
V
A
A
mA
A
mW
mW
°C
°C
°C
collector-base voltage open emitter
t = 1 ms or limited by
T
j(max)
t
p
≤
300
µs; δ ≤
0.02
[1]
[2]
-
-
-
-
−65
−65
total power dissipation T
amb
≤
25
°C
junction temperature
ambient temperature
storage temperature
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, 1 cm
2
collector mounting pad.
0.6
P
tot
(W)
(1)
001aaa714
0.4
(2)
0.2
0
0
40
80
120
160
T
amb
(°C)
(1) FR4 PCB; 1 cm
2
collector mounting pad.
(2) FR4 PCB; standard footprint.
Fig 1. Power derating curves
9397 750 14359
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 31 January 2005
3 of 14
Philips Semiconductors
PBSS4160V
60 V, 1 A NPN low V
CEsat
(BISS) transistor
6. Thermal characteristics
Table 6:
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction
to ambient
Conditions
in free air
[1]
[2]
Min Typ Max Unit
-
-
-
-
415 K/W
250 K/W
[1]
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, 1 cm
2
collector mounting pad.
10
3
Z
th
(K/W)
10
2
(1)
(2)
(3)
(4)
(5)
(6)
(7)
001aaa715
10
(8)
(9)
(10)
1
10
−1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
Mounted on FR4 PCB; standard footprint.
(1)
δ
= 1
(2)
δ
= 0.75
(3)
δ
= 0.5
(4)
δ
= 0.33
(5)
δ
= 0.2
(6)
δ
= 0.1
(7)
δ
= 0.05
(8)
δ
= 0.02
(9)
δ
= 0.01
(10)
δ
= 0
Fig 2. Transient thermal impedance as a function of pulse time; typical values
9397 750 14359
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 31 January 2005
4 of 14
Philips Semiconductors
PBSS4160V
60 V, 1 A NPN low V
CEsat
(BISS) transistor
7. Characteristics
Table 7:
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol Parameter
I
CBO
collector-base
cut-off current
collector-emitter
cut-off current
Conditions
V
CB
= 60 V; I
E
= 0 A
V
CB
= 60 V; I
E
= 0 A;
T
j
= 150
°C
V
CE
= 60 V; V
BE
= 0 V
Min
-
-
-
-
250
[1]
[1]
Typ
-
-
-
-
400
350
150
90
110
200
0.95
200
0.82
11
78
90
340
160
500
220
5.5
Max
100
50
100
100
-
-
-
110
140
250
1.1
250
0.9
-
-
-
-
-
-
-
10
Unit
nA
µA
nA
nA
I
CES
I
EBO
h
FE
emitter-base cut-off V
EB
= 5 V; I
C
= 0 A
current
DC current gain
V
CE
= 5 V; I
C
= 1 mA
V
CE
= 5 V; I
C
= 500 mA
V
CE
= 5 V; I
C
= 1 A
200
100
-
-
V
CEsat
collector-emitter
saturation voltage
I
C
= 100 mA; I
B
= 1 mA
I
C
= 500 mA; I
B
= 50 mA
I
C
= 1 A; I
B
= 100 mA
[1]
mV
mV
mV
V
mΩ
V
ns
ns
ns
ns
ns
ns
MHz
pF
-
-
V
BEsat
R
CEsat
V
BEon
t
d
t
r
t
on
t
s
t
f
t
off
f
T
C
c
[1]
base-emitter
saturation voltage
equivalent
on-resistance
base-emitter
turn-on voltage
delay time
rise time
turn-on time
storage time
fall time
turn-off time
I
C
= 1 A; I
B
= 50 mA
I
C
= 1 A; I
B
= 100 mA
V
CE
= 5 V; I
C
= 1 A
V
CC
= 10 V; I
C
= 0.5 A;
I
Bon
= 25 mA; I
Boff
=
−25
mA
[1]
-
-
-
-
-
-
-
-
150
-
transition frequency I
C
= 50 mA; V
CE
= 10 V;
f = 100 MHz
collector
capacitance
V
CB
= 10 V; I
E
= I
e
= 0 A;
f = 1 MHz
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
9397 750 14359
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 31 January 2005
5 of 14
京公网安备 11010802033920号
EEWORLD
