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PBSS3540E

Description
40 V, 500 mA PNP low VCEsat (BISS) transistor
CategoryDiscrete semiconductor    The transistor   
File Size97KB,11 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
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PBSS3540E Overview

40 V, 500 mA PNP low VCEsat (BISS) transistor

PBSS3540E Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)0.5 A
ConfigurationSingle
Minimum DC current gain (hFE)40
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)0.25 W
surface mountYES
Nominal transition frequency (fT)100 MHz
PBSS3540E
40 V, 500 mA PNP low V
CEsat
(BISS) transistor
Rev. 01 — 3 May 2005
Product data sheet
1. Product profile
1.1 General description
PNP low V
CEsat
Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD
plastic package.
NPN complement: PBSS2540E.
1.2 Features
s
s
s
s
s
Low collector-emitter saturation voltage V
CEsat
High collector current capability: I
C
and I
CM
High collector current gain (h
FE
) at high I
C
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
s
s
s
s
s
DC-to-DC conversion
MOSFET gate driving
Motor control
Charging circuits
Low power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1:
V
CEO
I
C
I
CM
R
CEsat
[1]
Quick reference data
Conditions
open base
Min
-
-
-
I
C
=
−500
mA;
I
B
=
−50
mA
[1]
Symbol Parameter
collector-emitter voltage
collector current (DC)
peak collector current
collector-emitter
saturation resistance
Typ
-
-
-
440
Max
−40
−500
−1
700
Unit
V
mA
A
mΩ
-
Pulse test: t
p
300
µs; δ ≤
0.02.
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