DISCRETE SEMICONDUCTORS
DATA SHEET
PDTA143E series
PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 4.7 kΩ
Product specification
Supersedes data of 2003 Sep 08
2004 Aug 04
Philips Semiconductors
Product specification
PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 4.7 kΩ
FEATURES
•
Built-in bias resistors
•
Simplified circuit design
•
Reduction of component count
•
Reduced pick and place costs.
APPLICATIONS
•
General purpose switching and amplification
•
Inverter and interface circuits
•
Circuit driver.
DESCRIPTION
PDTA143E series
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
O
R1
R2
PARAMETER
collector-emitter
voltage
output current (DC)
bias resistor
bias resistor
TYP.
−
−
4.7
4.7
MAX.
−50
−100
−
−
UNIT
V
mA
kΩ
kΩ
PNP resistor-equipped transistor (see “Simplified outline,
symbol and pinning” for package details).
PRODUCT OVERVIEW
PACKAGE
TYPE NUMBER
PHILIPS
PDTA143EE
PDTA143EEF
PDTA143EK
PDTA143EM
PDTA143ES
PDTA143ET
PDTA143EU
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
SOT416
SOT490
SOT346
SOT883
SOT54 (TO-92)
SOT23
SOT323
EIAJ
SC-75
SC-89
SC-59
SC-101
SC-43
−
SC-70
01
50
01
DL
TA143E
*01
(1)
*01
(1)
PDTC143EE
PDTC143EEF
PDTC143EK
PDTC143EM
PDTC143ES
PDTC143ET
PDTC143EU
MARKING CODE
NPN COMPLEMENT
2004 Aug 04
2
Philips Semiconductors
Product specification
PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 4.7 kΩ
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
PDTA143E series
PINNING
TYPE NUMBER
PDTA143ES
handbook, halfpage
SIMPLIFIED OUTLINE AND SYMBOL
PIN
1
2
2
R1
1
R2
3
MAM338
DESCRIPTION
base
collector
emitter
1
2
3
3
PDTA143EE
PDTA143EEF
PDTA143EK
PDTA143ET
PDTA143EU
1
Top view
2
MDB271
1
2
handbook, halfpage
base
emitter
collector
3
R1
1
R2
3
3
2
PDTA143EM
handbook, halfpage
1
2
3
R1
3
1
Bottom view
MDB267
base
emitter
collector
3
2
1
R2
2
2004 Aug 04
3
Philips Semiconductors
Product specification
PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 4.7 kΩ
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
V
I
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
I
O
I
CM
P
tot
output current (DC)
peak collector current
total power dissipation
SOT23
SOT54
SOT323
SOT346
SOT416
SOT490
SOT883
T
stg
T
j
T
amb
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60
µm
copper strip line.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
SOT23
SOT54
SOT323
SOT346
SOT416
SOT490
SOT883
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60
µm
copper strip line.
2004 Aug 04
4
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
in free air
note 1
note 1
note 1
note 1
note 1
notes 1 and 2
notes 2 and 3
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C
note 1
note 1
note 1
note 1
note 1
notes 1 and 2
notes 2 and 3
−
−
−
−
−
−
−
−65
−
−65
−
−
−
−
CONDITIONS
open emitter
open base
open collector
−
−
−
PDTA143E series
MIN.
MAX.
−50
−50
−10
+10
−30
−100
−100
250
500
200
250
150
250
250
+150
150
+150
V
V
V
V
V
UNIT
mA
mA
mW
mW
mW
mW
mW
mW
mW
°C
°C
°C
VALUE
500
250
625
500
833
500
500
UNIT
K/W
K/W
K/W
K/W
K/W
K/W
K/W
Philips Semiconductors
Product specification
PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 4.7 kΩ
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
V
i(off)
V
i(on)
R1
R2
-------
-
R1
C
c
PARAMETER
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
input-off voltage
input-on voltage
input resistor
resistor ratio
collector capacitance
CONDITIONS
V
CB
=
−50
V; I
E
= 0
V
CE
=
−30
V; I
B
= 0
V
CE
=
−30
V; I
B
= 0; T
j
= 150
°C
V
EB
=
−5
V; I
C
= 0
V
CE
=
−5
V; I
C
=
−10
mA
I
C
=
−10
mA; I
B
=
−0.5
mA
I
C
=
−100 µA;
V
CE
=
−5
V
I
C
=
−20
mA; V
CE
=
−0.3
V
PDTA143E series
MIN.
−
−
−
−
30
−
−
−2.5
3.3
0.8
TYP.
−
−
−
−
−
−
−1.1
−1.9
4.7
1
−
MAX.
−100
−1
−50
−0.9
−
−150
−0.5
−
6.1
1.2
3
UNIT
nA
µA
µA
mA
mV
V
V
kΩ
I
E
= i
e
= 0; V
CB
=
−10
V; f = 1 MHz
−
pF
2004 Aug 04
5
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