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PDTA143ES

Description
PNP resistor-equipped transistor
CategoryDiscrete semiconductor    The transistor   
File Size82KB,14 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
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PDTA143ES Overview

PNP resistor-equipped transistor

PDTA143ES Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)0.1 A
Minimum DC current gain (hFE)20
JESD-609 codee3
Number of components1
Polarity/channel typePNP
Maximum power dissipation(Abs)0.5 W
surface mountNO
Terminal surfaceMatte Tin (Sn)
Transistor component materialsSILICON
DISCRETE SEMICONDUCTORS
DATA SHEET
PDTA143E series
PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 4.7 kΩ
Product specification
Supersedes data of 2003 Sep 08
2004 Aug 04

PDTA143ES Related Products

PDTA143ES PDTA143E PDTA143EK PDTA143EU
Description PNP resistor-equipped transistor PNP resistor-equipped transistor PNP resistor-equipped transistor PNP resistor-equipped transistor
Is it Rohs certified? conform to - conform to conform to
Maker Philips Semiconductors (NXP Semiconductors N.V.) - Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknow - unknow unknow
Maximum collector current (IC) 0.1 A - 0.1 A 0.1 A
Minimum DC current gain (hFE) 20 - 20 20
JESD-609 code e3 - e3 e3
Number of components 1 - 1 1
Polarity/channel type PNP - PNP PNP
Maximum power dissipation(Abs) 0.5 W - 0.25 W 0.2 W
surface mount NO - YES YES
Terminal surface Matte Tin (Sn) - Matte Tin (Sn) Matte Tin (Sn)
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