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P4532VG

Description
N- & P-Channel Enhancement Mode Field Effect Transistor(Preliminary)
File Size604KB,8 Pages
ManufacturerETC
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P4532VG Overview

N- & P-Channel Enhancement Mode Field Effect Transistor(Preliminary)

NIKO-SEM
N- & P-Channel Enhancement Mode
Field Effect Transistor(Preliminary)
P4532VG
SOP-8
Lead-Free
PRODUCT SUMMARY
V
(BR)DSS
N-Channel
P-Channel
30
-30
R
DS(ON)
60mΩ
45mΩ
I
D
4A
-5A
G : GATE
D : DRAIN
S : SOURCE
ABSOLUTE MAXIMUM RATINGS (T
C
= 25
°C
Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Power Dissipation
Junction & Storage Temperature Range
T
C
= 25 °C
T
C
= 70 °C
T
C
= 25 °C
T
C
= 70 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
P
D
T
j
, T
stg
N-Channel P-Channel
30
±20
4
3
12
2
1.3
-55 to 150
-30
±20
-5
-4
-20
W
°C
A
UNITS
V
V
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1
2
SYMBOL
R
θJA
TYPICAL
MAXIMUM
62.5
UNITS
°C / W
Pulse width limited by maximum junction temperature.
Duty cycle
1%
ELECTRICAL CHARACTERISTICS (T
C
= 25
°C,
Unless Otherwise Noted)
LIMITS
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0V, I
D
= 250µA
V
GS
= 0V, I
D
= -250µA
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250µA
V
DS
= V
GS
, I
D
= -250µA
N-Ch
P-Ch
N-Ch
P-Ch
30
-30
1
-1
1.5
-1.5
2.5
-2.5
V
MIN
TYP MAX
UNIT
1
JUL-26-2004
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