TC3889
PRE.2_04/27/2005
Preliminary
5W Packaged Self-Bias PHEMT GaAs Power FETs
FEATURES
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5W Typical Output Power
12dB Typical Linear Power Gain at 2.0GHz
High Linearity:
IP3 = 47 dBm Typical
High Power Added Efficiency:
Nominal PAE of 35%
Breakdown Voltage: BV
DGO
≥
18V
Wg = 12 mm
100 % DC Tested
Suitable for High Reliability Application
The TC3889 is a self-bias flange ceramic packaged device with TC1806N PHEMT GaAs FETs, which is
designed to provide the single power supply application. The flange ceramic package provides excellent
thermal conductivity for the GaAs FET. The devices only need to provide the positive voltage to drain and
ground the source, which is suitable for oscillator, power amplifier application in a wide range of
commercial application. All devices are 100% DC tested to assure consistent quality.
ELECTRICAL SPECIFICATIONS (@ 2.0 GHz)
Symbol
P
1dB
G
L
IP3
PAE
I
DS
BV
DGO
R
th
CONDITIONS
Output Power at 1dB Gain Compression Point
V
DS
= 10 V
Linear Power Gain
V
DS
= 10 V
Intercept Point of the 3
rd
-order Intermodulation
V
DS
= 10 V, *P
SCL
= 26 dBm
Power Added Efficiency at 1dB Compression Power
Drain-Source Current at V
DS
= 10 V
Drain-Gate Breakdown Voltage at I
DGO
= 6mA
Thermal Resistance
MIN
36
TYP
37
12
47
35
1300
22
2.7
MAX
UNIT
dBm
dB
dBm
%
mA
Volts
°C/W
PHOTO ENLARGEMENT
DESCRIPTION
18
Note: *P
SCL
: Output Power of Single Carrier Level.
TRANSCOM, INC.,
90 Dasoong 7
th
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P 1/1
京公网安备 11010802033920号
EEWORLD
