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2SD1304

Description
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 100MA I(C) | SOT-23
CategoryDiscrete semiconductor    The transistor   
File Size177KB,5 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Download Datasheet Parametric Compare View All

2SD1304 Overview

TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 100MA I(C) | SOT-23

2SD1304 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage23 V
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum DC current gain (hFE)90
JEDEC-95 codeTO-236
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.2 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
Base Number Matches1

2SD1304 Related Products

2SD1304 2SD1304R 2SD1291 2SD1304S 2SD1304Q
Description TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 100MA I(C) | SOT-23 TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 100MA I(C) | SOT-23 TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 100MA I(C) | SOT-23 TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 100MA I(C) | SOT-23 TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 100MA I(C) | SOT-23
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 , SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknow unknow unknow unknow unknow
Maximum collector current (IC) 0.1 A 0.1 A 3 A 0.1 A 0.1 A
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE Single SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum DC current gain (hFE) 90 210 4 290 160
Polarity/channel type NPN NPN NPN NPN NPN
surface mount YES YES NO YES YES
Base Number Matches 1 1 1 1 1
Parts packaging code SOT-23 SOT-23 - SOT-23 SOT-23
Contacts 3 3 - 3 3
ECCN code EAR99 EAR99 - EAR99 EAR99
Collector-emitter maximum voltage 23 V 23 V - 23 V 23 V
JEDEC-95 code TO-236 TO-236 - TO-236 TO-236
JESD-30 code R-PDSO-G3 R-PDSO-G3 - R-PDSO-G3 R-PDSO-G3
Number of components 1 1 - 1 1
Number of terminals 3 3 - 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE
Certification status Not Qualified Not Qualified - Not Qualified Not Qualified
Terminal form GULL WING GULL WING - GULL WING GULL WING
Terminal location DUAL DUAL - DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER - AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON - SILICON SILICON
Nominal transition frequency (fT) 150 MHz 150 MHz - 150 MHz 150 MHz
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