BAS33, BAS34
www.vishay.com
Vishay Semiconductors
Small Signal Switching Diodes
FEATURES
• Silicon planar diodes
• Very low reverse current
• AEC-Q101 qualified
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Protection circuits, time delay circuits, peak follower
circuits, logarithmic amplifiers
DESIGN SUPPORT TOOLS
click logo to get started
Models
Available
MECHANICAL DATA
Case:
DO-35 (DO-204AH)
Weight:
approx. 125 mg
Cathode band color:
black
Packaging codes / options:
TR/10K per 13" reel (52 mm tape), 50K/box
TAP/10K per ammopack (52 mm tape), 50K/box
PARTS TABLE
PART
BAS33
BAS34
TYPE DIFFERENTIATION
V
RRM
= 40 V
V
RRM
= 70 V
ORDERING CODE
BAS33-TAP or BAS33-TR
BAS34-TAP or BAS34-TR
TYPE
MARKING
BAS33
BAS34
CIRCUIT
CONFIGURATION
Single
Single
REMARKS
Tape and reel / ammopack
Tape and reel / ammopack
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
Forward continuous current
t
p
= 1 μs
TEST CONDITION
PART
BAS33
BAS34
BAS33
BAS34
SYMBOL
V
RRM
V
RRM
V
R
V
R
I
FSM
I
F
VALUE
40
70
30
60
2
200
UNIT
V
V
V
V
A
mA
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
TEST CONDITION
l = 4 mm, T
L
= constant
SYMBOL
R
thJA
T
j
T
stg
VALUE
350
175
-65 to +175
UNIT
K/W
°C
°C
Rev. 1.8, 12-Jul-17
Document Number: 85541
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BAS33, BAS34
www.vishay.com
Vishay Semiconductors
PART
SYMBOL
V
F
I
R
I
R
BAS33
BAS34
BAS33
BAS34
I
R
I
R
V
(BR)
V
(BR)
C
D
40
70
3
0.5
0.5
1
MIN.
TYP.
MAX.
1
3
0.5
1
1
UNIT
V
nA
μA
nA
nA
V
V
pF
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
TEST CONDITION
I
F
= 100 mA
E
≤
300 Ix, V
R
Reverse current
E
≤
300 Ix, V
R
, T
j
= 125 °C
E
≤
300 Ix, V
R
= 15 V
E
≤
300 Ix, V
R
= 30 V
Breakdown voltage
Diode capacitance
I
R
= 5 μA, t
p
/T = 0.01,
t
p
= 0.3 ms
V
R
= 0 V, f = 1 MHz,
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
10 000
V
R
= V
RRM
I
R
- Reverse Current (nA)
1000
T
j
= 25 °C
100
Scattering Limit
10
1000
Scattering Limit
100
I
F
- Forward Current (mA)
10
1
1
0
94 9079
0.1
40
80
120
160
200
94 9078
0
0.4
0.8
1.2
1.6
2.0
T
j
- Junction Temperature (°C)
V
F
- Forward Voltage (V)
Fig. 1 - Reverse Current vs. Junction Temperature
Fig. 2 - Forward Current vs. Forward Voltage
PACKAGE DIMENSIONS
in millimeters (inches):
DO-35 (DO-204AH)
Cathode Identification
Ø 0.6 max. [0.024]
Ø 0.4 min. [0.015]
1.7 [0.067]
26 min. [1.024]
3.9 max. [0.154]
3.1 min. [0.120]
26 min. [1.024]
Rev. 6 - Date: 19. December 2011
Document no.: SB-V-3906.04-031(4)
94 9366
Rev. 1.8, 12-Jul-17
Document Number: 85541
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1.3 [0.050]
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Revision: 08-Feb-17
1
Document Number: 91000
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