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2N6421

Description
Darlington Transistors . .
CategoryDiscrete semiconductor    The transistor   
File Size408KB,3 Pages
ManufacturerCentral Semiconductor
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Darlington Transistors . .

2N6421 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeTO-66
package instructionTO-66, 2 PIN
Contacts2
Reach Compliance Codenot_compliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)2 A
Collector-emitter maximum voltage250 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-66
JESD-30 codeO-MBFM-P2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)35 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)10 MHz
Base Number Matches1
2N6420
2N6421
2N6422
2N6423
SILICON
PNP POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6420 series
devices are silicon PNP power transistors designed
for high speed switching and high voltage amplifier
applications.
MARKING: FULL PART NUMBER
TO-66 CASE
MAXIMUM RATINGS:
(TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL 2N6420 2N6421
VCBO
250
375
VCEO
175
250
VEBO
6.0
6.0
IC
1.0
2.0
ICM
5.0
IB
1.0
PD
35
TJ, Tstg
-65 to +200
JC
5.0
MAX
1.0
1.0
1.0
2.0
3.0
3.0
3.0
5.0
10
5.0
5.0
0.5
2N6422
2N6423
500
300
6.0
2.0
UNITS
V
V
V
A
A
A
W
°C
°C/W
ELECTRICAL CHARACTERISTICS:
(TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICEV
VCE=225V, VBE=1.5V (2N6420)
ICEV
VCE=340V, VBE=1.5V (2N6421)
ICEV
VCE=450V, VBE=1.5V (2N6422)
ICEV
VCE=450V, VBE=1.5V (2N6423)
ICEV
VCE=225V, VBE=1.5V, TC=150°C (2N6420)
ICEV
VCE=300V, VBE=1.5V, TC=150°C (2N6421)
ICEV
VCE=300V, VBE=1.5V, TC=150°C (2N6422)
ICEV
VCE=300V, VBE=1.5V, TC=150°C (2N6423)
ICEO
VCE=150V (2N6420)
ICEO
VCE=150V (2N6421, 2N6422, 2N6423)
IEBO
VEB=6.0V (2N6420)
IEBO
VEB=6.0V (2N6421, 2N6422, 2N6423)
BVCEO
IC=50mA, (2N6420)
175
BVCEO
IC=50mA, (2N6421)
250
BVCEO
IC=50mA, (2N6422, 2N6423)
300
VCE(SAT) IC=1.0A, IB=125mA (2N6420 thru 2N6422)
VCE(SAT) IC=750mA, IB=75mA (2N6423)
VBE(SAT) IC=1.0A, IB=100mA (2N6420 thru 2N6422)
VBE(SAT) IC=750mA, IB=75mA (2N6423)
hFE
VCE=10V, IC=100mA
40
hFE
VCE=10V, IC=500mA (2N6420)
40
0.75
1.0
1.4
1.8
200
UNITS
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
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