2N5058 datasheet, PDF - EEWORLD Datasheet

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2N5058: DescriptionBipolar Transistors - BJT Small Signal Transistor; CategoryDiscrete semiconductor The transistor; File Size326KB，3 Pages; ManufacturerCentral Semiconductor

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Bipolar Transistors - BJT Small Signal Transistor

2N5058 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Parts packaging code	TO-39
package instruction	CYLINDRICAL, O-MBCY-W3
Contacts	3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Maximum collector current (IC)	0.15 A
Collector-emitter maximum voltage	300 V
Configuration	SINGLE
Minimum DC current gain (hFE)	35
JEDEC-95 code	TO-39
JESD-30 code	O-MBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	175 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	1 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	30 MHz
Base Number Matches	1

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2N5058

2N5059

SILICON

NPN TRANSISTORS

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N5058 and 2N5059

are silicon NPN epitaxial planar transistors designed for

high voltage general purpose amplifier applications.

MARKING: FULL PART NUMBER

TO-39 CASE

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

Power Dissipation (TC=25°C)

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VCBO

VCEO

VEBO

TJ, Tstg



2N5058

300

7.0

150

1.0

5.0

-65 to +200

150

2N5059

250

6.0

UNITS

°C

°C/W

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

2N5058

SYMBOL

TEST CONDITIONS

MIN

MAX

ICBO

VCB=100V

ICBO

VCB=100V, TA=125°C

IEBO

BVCBO

BVCEO

BVEBO

VCE(SAT)

VBE(SAT)

VBE(ON)

hFE

Cob

Cib

VEB=5.0V

IC=100μA

IC=30mA

IE=100μA

IC=30mA, IB=3.0mA

VCE=25V,

IC=30mA

IC=5.0mA

IC=30mA

300

7.0

1.0

0.85

0.82

150

160

2N5059

MIN

MAX

250

6.0

1.0

0.85

0.82

150

160

UNITS

μA

IC=30mA, TA=-55°C

VCE=25V, IC=100mA

VCE=25V, IC=10mA, f=20MHz

VCB=10V, IE=0, f=1.0MHz

VEB=0.5V, IC=0, f=1.0MHz

MHz

R1 (27-March 2015)

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