MBRTA60020 thru MBRTA60040R
Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 20 V to 40 V V
RRM
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive
Heavy Three Tower Package
V
RRM
= 20 V - 40 V
I
F(AV)
= 600 A
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
T
j
T
stg
Conditions
MBRTA60020(R) MBRTA60030(R) MBRTA60035(R) MBRTA60040(R) Unit
20
14
20
-55 to 150
-55 to 150
30
21
30
-55 to 150
-55 to 150
35
25
35
-55 to 150
-55 to 150
40
28
40
-55 to 150
-55 to 150
V
V
V
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Average forward current
(per pkg)
Peak forward surge current
(per leg)
Maximum instantaneous
forward voltage (per leg)
Reverse current at rated
DC blocking voltage (per
leg)
Symbol
I
F(AV)
I
FSM
V
F
I
R
Conditions
T
C
= 100 °C
t
p
= 8.3 ms, half sine
I
FM
= 300 A, T
j
= 25 °C
T
j
= 25 °C
T
j
= 100 °C
T
j
= 150 °C
MBRTA60020(R) MBRTA60030(R) MBRTA60035(R) MBRTA60040(R) Unit
600
4000
0.70
1
10
50
0.28
600
4000
0.70
1
10
50
0.28
600
4000
0.70
1
10
50
0.28
600
4000
0.70
1
10
50
0.28
A
A
V
mA
Thermal characteristics
Thermal resistance,
junction - case (per leg)
R
ΘJC
°C/W
www.genesicsemi.com/silicon-products/schottky-rectifiers/
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MBRTA60020 thru MBRTA60040R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
www.genesicsemi.com/silicon-products/schottky-rectifiers/
3
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