BSC039N06NS datasheet, PDF - EEWORLD Datasheet

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BSC039N06NS: DescriptionMOSFET N-Ch 60V 100A TDSON-8; Categorysemiconductor Discrete semiconductor; File Size500KB，9 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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BSC039N06NS Overview

MOSFET N-Ch 60V 100A TDSON-8

BSC039N06NS Parametric

Parameter Name	Attribute value
Product Attribute	Attribute Value
Manufacturer	Infineon
Product Category	MOSFET
RoHS	Details
Technology	Si
Mounting Style	SMD/SMT
Package / Case	TDSON-8
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	100 A
Rds On - Drain-Source Resistance	3.9 mOhms
Vgs th - Gate-Source Threshold Voltage	2.1 V
Vgs - Gate-Source Voltage	10 V
Qg - Gate Charge	27 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Configuration	Single
Pd - Power Dissipation	69 W
Channel Mode	Enhancement
Packaging	Cut Tape
Packaging	MouseReel
Packaging	Reel
Height	1.27 mm
Length	5.9 mm
Transistor Type	1 N-Channel
Width	5.15 mm
Forward Transconductance - Min	42 S
Fall Time	7 ns
Rise Time	12 ns
Factory Pack Quantity	5000
Typical Turn-Off Delay Time	20 ns
Typical Turn-On Delay Time	12 ns

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Type

BSC039N06NS

OptiMOS

Power-Transistor

Features

• Optimized for high performance SMPS, e.g. sync. rec.

• 100% avalanche tested

• Superior thermal resistance

• N-channel

• Qualified according to JEDEC

for target applications

• Pb-free lead plating; RoHS compliant

• Halogen-free according to IEC61249-2-21

PG-TDSON-8

Product Summary

DS(on),max

OSS

(0V..10V)

3.9

100

Type

BSC039N06NS

Package

PG-TDSON-8

Marking

039N06NS

Maximum ratings,

=25 °C, unless otherwise specified

Parameter

Continuous drain current

Symbol Conditions

=10 V,

=25 °C

=10 V,

=100 °C

=10 V,

=25 °C,

thJA

=50K/W

Pulsed drain current

Avalanche energy, single pulse

Gate source voltage

Value

100

400

±20

Unit

D,pulse

=25 °C

=50 A,

=25

J-STD20 and JESD22

Device on 40 x 40 x 1.5 mm epoxy PCB FR4 with 6 cm

(one layer, 70 µm thick) copper area for drain connection.

PCB is vertical in still air.

See figure 3 for more detailed information

See figure 13 for more detailed information

Rev.2.1

page 1

2012-12-07

BSC039N06NS Related Products

	BSC039N06NS	BSC039N06NSATMA1
Description	MOSFET N-Ch 60V 100A TDSON-8	MOSFET N-Ch 60V 100A TDSON-8
Product Attribute	Attribute Value	Attribute Value
Manufacturer	Infineon	Infineon
Product Category	MOSFET	MOSFET
RoHS	Details	Details
Technology	Si	Si
Mounting Style	SMD/SMT	SMD/SMT
Package / Case	TDSON-8	PG-TDSON-8
Number of Channels	1 Channel	1 Channel
Transistor Polarity	N-Channel	N-Channel
Vds - Drain-Source Breakdown Voltage	60 V	60 V
Id - Continuous Drain Current	100 A	100 A
Rds On - Drain-Source Resistance	3.9 mOhms	3.9 mOhms
Vgs th - Gate-Source Threshold Voltage	2.1 V	2.1 V
Vgs - Gate-Source Voltage	10 V	10 V
Qg - Gate Charge	27 nC	27 nC
Minimum Operating Temperature	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C
Configuration	Single	Single Quad Drain Triple Source
Pd - Power Dissipation	69 W	69 W
Channel Mode	Enhancement	Enhancement
Height	1.27 mm	1.27 mm
Length	5.9 mm	5.9 mm
Transistor Type	1 N-Channel	1 N-Channel
Width	5.15 mm	5.15 mm
Forward Transconductance - Min	42 S	42 S
Fall Time	7 ns	7 ns
Rise Time	12 ns	12 ns
Factory Pack Quantity	5000	5000
Typical Turn-Off Delay Time	20 ns	20 ns
Typical Turn-On Delay Time	12 ns	12 ns
Packaging	Reel	Reel

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