Type
BSC039N06NS
OptiMOS
TM
Power-Transistor
Features
• Optimized for high performance SMPS, e.g. sync. rec.
• 100% avalanche tested
• Superior thermal resistance
• N-channel
• Qualified according to JEDEC
1)
for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
PG-TDSON-8
Product Summary
V
DS
R
DS(on),max
I
D
Q
OSS
Q
G
(0V..10V)
60
3.9
100
V
mW
A
nC
nC
32
27
Type
BSC039N06NS
Package
PG-TDSON-8
Marking
039N06NS
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
V
GS
=10 V,
T
C
=25 °C
V
GS
=10 V,
T
C
=100 °C
V
GS
=10 V,
T
C
=25 °C,
R
thJA
=50K/W
2)
Pulsed drain current
3)
Avalanche energy, single pulse
4)
Gate source voltage
1)
2)
Value
100
65
19
400
50
±20
Unit
A
I
D,pulse
E
AS
V
GS
T
C
=25 °C
I
D
=50 A,
R
GS
=25
W
mJ
V
J-STD20 and JESD22
Device on 40 x 40 x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
3)
4)
See figure 3 for more detailed information
See figure 13 for more detailed information
Rev.2.1
page 1
2012-12-07
BSC039N06NS
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Power dissipation
Symbol Conditions
P
tot
T
C
=25 °C
T
A
=25 °C,
R
thJA
=50 K/W
2)
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T
j
,
T
stg
Value
69
2.5
-55 ... 150
55/150/56
°C
Unit
W
Parameter
Symbol Conditions
min.
Values
typ.
max.
Unit
Thermal characteristics
Thermal resistance, junction - case
R
thJC
top
Device on PCB
R
thJA
6 cm
2
cooling area
2)
-
-
-
-
-
-
1.8
20
50
K/W
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=36 µA
V
DS
=60 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=60 V,
V
GS
=0 V,
T
j
=125 °C
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=20 V,
V
DS
=0 V
V
GS
=10 V,
I
D
=50 A
V
GS
=6 V,
I
D
=12.5 A
Gate resistance
Transconductance
R
G
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=50 A
60
2.1
-
-
2.8
0.5
-
3.3
1
µA
V
-
-
-
-
-
42
10
10
3.3
4.8
1.6
85
100
100
3.9
5.9
2.4
-
W
S
nA
mW
Rev.2.1
page 2
2012-12-07
BSC039N06NS
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
5)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total, sync. FET
Output charge
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
I
S
I
S,pulse
V
SD
t
rr
Q
rr
V
GS
=0 V,
I
F
=50 A,
T
j
=25 °C
V
R
=30 V,
I
F
=50 A,
di
F
/dt =100 A/µs
-
T
C
=25 °C
-
-
-
-
-
0.9
32
28
400
1.2
51
-
V
ns
nC
-
100
A
Q
gs
Q
g(th)
Q
gd
Q
sw
Q
g
V
plateau
Q
g(sync)
Q
oss
V
DS
=0.1 V,
V
GS
=0 to 10 V
V
DD
=30 V,
V
GS
=0 V
V
DD
=30 V,
I
D
=50 A,
V
GS
=0 to 10 V
-
-
-
-
-
-
-
-
9
5
5
9
27
4.8
24
32
-
-
7
-
32
-
-
-
V
nC
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=30 V,
V
GS
=10 V,
I
D
=50 A,
R
G,ext
=3
W
V
GS
=0 V,
V
DS
=30 V,
f
=1 MHz
-
-
-
-
-
-
-
2000
490
22
12
12
20
7
2500
613
44
-
-
-
-
ns
pF
Values
typ.
max.
Unit
5)
See figure 16 for gate charge parameter definition
Rev.2.1
page 3
2012-12-07
BSC039N06NS
1 Power dissipation
P
tot
=f(T
C
)
2 Drain current
I
D
=f(T
C
);
V
GS
≥10 V
80
120
100
60
80
P
tot
[W]
40
I
D
[A]
0
25
50
75
100
125
150
175
60
40
20
20
0
0
0
25
50
75
100
125
150
175
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
10
3
limited by on-state
resistance
4 Max. transient thermal impedance
Z
thJC
=f(t
p
)
parameter:
D
=t
p
/T
10
1 µs
10
2
10 µs
1
100 µs
0.5
Z
thJC
[K/W]
I
D
[A]
0.2
0.1
0.05
10
1
1 ms
10 ms
DC
0.1
0.02
10
0
0.01
single pulse
10
-1
10
-1
10
0
10
1
10
2
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
V
DS
[V]
t
p
[s]
Rev.2.1
page 4
2012-12-07
BSC039N06NS
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
400
360
320
280
10 V
7V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
8
5V
5.5 V
6V
7
7V
6
200
6V
R
DS(on)
[mW]
240
5
I
D
[A]
4
10 V
160
120
80
5V
3
5.5 V
2
40
0
0.0
0.5
1.0
1.5
2.0
1
0
0
50
100
150
200
250
300
350
400
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
parameter:
T
j
400
360
320
280
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
120
80
240
200
160
120
80
40
0
0
2
4
6
8
150 °C
g
fs
[S]
40
25 °C
I
D
[A]
0
0
20
40
60
80
100
V
GS
[V]
I
D
[A]
Rev.2.1
page 5
2012-12-07
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