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BLF7G21L-160P112

Description
RF MOSFET Transistors Power LDMOS transistor
Categorysemiconductor    Discrete semiconductor   
File Size1MB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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RF MOSFET Transistors Power LDMOS transistor

BLF7G21L-160P112 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerNXP
Product CategoryRF MOSFET Transistors
RoHSDetails
Transistor PolarityN-Channel
Id - Continuous Drain Current32.5 A
Vds - Drain-Source Breakdown Voltage65 V
TechnologySi
Gain18 dB
Output Power50 W
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Package / CaseSOT-1121A
PackagingTube
ConfigurationDual
Operating Frequency1.8 GHz to 2.05 GHz
TypeRF Power MOSFET
Factory Pack Quantity60
Vgs - Gate-Source Voltage13 V
Vgs th - Gate-Source Threshold Voltage1.9 V
BLF7G21L-160P;
BLF7G21LS-160P
Power LDMOS transistor
Rev. 4 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
160 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2050 MHz, also suitable for operation at 1495 MHz to 1511 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Mode of operation
2-carrier W-CDMA
1-carrier W-CDMA
[1]
[2]
f
(MHz)
1930 to 1990
1930 to 1990
I
Dq
(mA)
1080
1080
V
DS
(V)
28
28
P
L(AV)
(W)
45
50
G
p
(dB)
18
18.0
D
(%)
34
36
ACPR
(dBc)
30
[1]
34
[2]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing 5 MHz.
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low thermal resistance providing excellent thermal stability
Designed for broadband operation (1800 MHz to 2050 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for base stations and multi carrier applications in the 1800 MHz to
2050 MHz frequency range
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