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BSS84AKV115

Description
MOSFET P-CH -50 V -170 mA
Categorysemiconductor    Discrete semiconductor   
File Size1MB,17 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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MOSFET P-CH -50 V -170 mA

BSS84AKV115 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerNXP
Product CategoryMOSFET
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOT-666-6
Number of Channels1 Channel
Transistor PolarityP-Channel
Vds - Drain-Source Breakdown Voltage- 50 V
Id - Continuous Drain Current- 170 mA
Rds On - Drain-Source Resistance7.5 Ohms
Qg - Gate Charge350 pC
ConfigurationSingle
Pd - Power Dissipation330 mW
PackagingCut Tape
PackagingMouseReel
PackagingReel
ProductMOSFET Small Signal
Transistor Type1 P-Channel
Forward Transconductance - Min150 mS
Factory Pack Quantity4000
Unit Weight0.000095 oz
BSS84AKV
50 V, 170 mA dual P-channel Trench MOSFET
Rev. 1 — 19 May 2011
Product data sheet
1. Product profile
1.1 General description
Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat
lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
ESD protection up to 1 kV
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1.
Symbol
V
DS
V
GS
I
D
R
DSon
Quick reference data
Parameter
drain-source voltage
gate-source voltage
drain current
drain-source on-state
resistance
V
GS
= -10 V; T
amb
= 25 °C
V
GS
= -10 V; I
D
= -100 mA;
T
j
= 25 °C
[1]
Conditions
T
j
= 25 °C
Min
-
-20
-
-
Typ
-
-
-
4.5
Max Unit
-50
20
V
V
Per transistor
-170 mA
7.5
Static characteristics (per transistor)
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm
2
.
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