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BSZ16DN25NS3GATMA1

Description
MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3
CategoryDiscrete semiconductor    The transistor   
File Size518KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BSZ16DN25NS3GATMA1 Overview

MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3

BSZ16DN25NS3GATMA1 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, S-PDSO-N5
Contacts8
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time26 weeks
Avalanche Energy Efficiency Rating (Eas)120 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage250 V
Maximum drain current (ID)10.9 A
Maximum drain-source on-resistance0.165 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeS-PDSO-N5
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals5
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeSQUARE
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)44 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
Type
BSZ16DN25NS3 G
OptiMOS
TM
3 Power-Transistor
Product Summary
Features
• Optimized for dc-dc conversion
• N-channel, normal level
• Excellent gate charge x
R
DS(on)
product (FOM)
• Low on-resistance
R
DS(on)
• 150 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
1)
for target application
• Halogen-free according to IEC61249-2-21
PG-TSDSON-8
V
DS
R
DS(on),max
I
D
250
165
10.9
V
mW
A
Type
BSZ16DN25NS3 G
Package
PG-TSDSON-8
Marking
16DN25N
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
C
=25 °C
T
C
=100 °C
Pulsed drain current
2)
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
1)
2)
Value
10.9
7.7
44
120
10
±20
Unit
A
I
D,pulse
E
AS
dv /dt
V
GS
P
tot
T
j
,
T
stg
T
C
=25 °C
I
D
=5.5 A,
R
GS
=25
W
mJ
kV/µs
V
W
°C
T
C
=25 °C
62.5
-55 ... 150
55/150/56
J-STD20 and JESD22
see figure 3
Rev. 2.2
page 1
2011-07-14

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