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BSZ16DN25NS3 G

Description
MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3
Categorysemiconductor    Discrete semiconductor    The transistor    MOSFET   
File Size518KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BSZ16DN25NS3 G Overview

MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3

BSZ16DN25NS3 G Parametric

Parameter NameAttribute value
MakerInfineon
Product CategoryMOSFET
technologySi
Installation styleSMD/SMT
Package/boxTSDSON-8
Number of channels1 Channel
Transistor polarityN-Channel
Vds - drain-source breakdown voltage250 V
Id-continuous drain current10.9 A
Rds On - drain-source on-resistance146 mOhms
Vgs th-gate-source threshold voltage2 V
Vgs - gate-source voltage20 V
Qg-gate charge11.4 nC
Minimum operating temperature- 55 C
Maximum operating temperature+ 150 C
Pd-power dissipation62.5 W
ConfigurationSingle
channel modeEnhancement
EncapsulationCut Tape
EncapsulationMouseReel
EncapsulationReel
high1.1 mm
length3.3 mm
seriesOptiMOS 3
Transistor type1 N-Channel
width3.3 mm
Forward transconductance - minimum7 S
Fall time4 ns
Rise Time4 ns
Factory packaging quantity5000
Typical shutdown delay time11 ns
Typical switch-on delay time6 ns
unit weight100 mg
Type
BSZ16DN25NS3 G
OptiMOS
TM
3 Power-Transistor
Product Summary
Features
• Optimized for dc-dc conversion
• N-channel, normal level
• Excellent gate charge x
R
DS(on)
product (FOM)
• Low on-resistance
R
DS(on)
• 150 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
1)
for target application
• Halogen-free according to IEC61249-2-21
PG-TSDSON-8
V
DS
R
DS(on),max
I
D
250
165
10.9
V
mW
A
Type
BSZ16DN25NS3 G
Package
PG-TSDSON-8
Marking
16DN25N
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
C
=25 °C
T
C
=100 °C
Pulsed drain current
2)
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
1)
2)
Value
10.9
7.7
44
120
10
±20
Unit
A
I
D,pulse
E
AS
dv /dt
V
GS
P
tot
T
j
,
T
stg
T
C
=25 °C
I
D
=5.5 A,
R
GS
=25
W
mJ
kV/µs
V
W
°C
T
C
=25 °C
62.5
-55 ... 150
55/150/56
J-STD20 and JESD22
see figure 3
Rev. 2.2
page 1
2011-07-14

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Description MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3 MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3
Maximum operating temperature + 150 C 150 °C
Configuration Single SINGLE WITH BUILT-IN DIODE
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