VS-95PF(R)...(W) High Voltage Series
www.vishay.com
Vishay Semiconductors
Standard Recovery Diodes
Generation 2 DO-5 (DO-203AB) (Stud Version), 95 A
FEATURES
95PF(R)...
95PF(R)...W
• High surge current capability
• Designed for a wide range of applications
• Stud cathode and stud anode version
• Wire version available
• Low thermal resistance
• Designed and qualified for multiple level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DO-5 (DO-203AB)
DO-5 (DO-203AB)
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
Package
Circuit configuration
95 A
DO-5 (DO-203AB)
Single
• Converters
• Power supplies
• Machine tool controls
• Welding
• Any high voltage input rectification bridge
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
F(AV)
I
F(RMS)
I
FSM
I
2
t
V
RRM
T
J
50 Hz
60 Hz
50 Hz
60 Hz
Range
T
C
TEST CONDITIONS
VALUES
95
128
149
1700
1800
14 500
13 500
1400 to 1600
-55 to +150
UNITS
A
°C
A
A
A
2
s
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VS-95PF(R)...(W)
VOLTAGE
CODE
140
160
V
RRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
1400
1600
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
1650
1900
I
RRM
MAXIMUM
AT T
J
= 150 °C
mA
4.5
Revision: 11-Jan-18
Document Number: 93533
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-95PF(R)...(W) High Voltage Series
www.vishay.com
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
Maximum RMS forward current
Maximum peak, one cycle forward,
non-repetitive surge current
SYMBOL
I
F(AV)
I
F(RMS)
t = 10 ms
I
FSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t
for fusing
Low level value of threshold voltage
Low level value of forward
slope resistance
Maximum forward voltage drop
I
2
t
V
F(TO)
r
f
V
FM
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
TEST CONDITIONS
180° conduction, half sine wave
VALUES
95
128
149
1700
1800
1450
Sinusoidal half wave,
initial T
J
= 150 °C
1500
14 500
13 500
10 500
9400
145 000
0.73
2.4
1.40
A
2
s
V
m
V
A
2
s
A
UNITS
A
°C
A
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
maximum
I
pk
= 267 A, T
J
= 25 °C, t
p
= 400 μs rectangular wave
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Thermal resistance,
case to heatsink
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, flat and greased
Not lubricated thread, tighting on nut
(1)
Lubricated thread, tighting on nut
(1)
Not lubricated thread, tighting on hexagon
(2)
Lubricated thread, tighting on hexagon
(2)
Approximate weight
Case style
See dimensions - link at the end of datasheet
TEST CONDITIONS
VALUES
-55 to +150
0.27
K/W
0.25
3.4
(30)
2.3
(20)
4.2
(37)
3.2
(28)
15.8
0.56
g
oz.
N·m
(lbf · in)
UNITS
°C
Maximum allowable
mounting torque (+ 0 %, - 10 %)
DO-5 (DO-203AB)
Notes
(1)
Recommended for pass-through holes
(2)
Torque must be applicable only to hexagon and not to plastic structure, recommended for holed heatsink
R
thJC
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
0.14
0.16
0.21
0.30
0.50
RECTANGULAR CONDUCTION
0.10
0.17
0.22
0.31
0.50
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 11-Jan-18
Document Number: 93533
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-95PF(R)...(W) High Voltage Series
www.vishay.com
Vishay Semiconductors
1800
Peak Half Sine Wave Forward Current (A)
160
Maximum Allowable Case Temperature (°C)
150
95PF(R) Series
140 to 160
RthJC = 0.27 K/W
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
1600
Initial Tj = Tj Max.
No Voltage Reapplied
1400
Rated Vrrm Reapplied
140
180° Sine
130
1200
1000
800
600
400
95PF(R) Series
85HF(R) Series
140 to 160
120
110
0
10 20 30 40 50 60 70 80 90 100
Average Forward Current (A)
200
0.01
0.1
Pulse Train Duration (s)
1
Fig. 1 - Current Ratings Characteristics
Fig. 3 - Maximum Non-Repetitive Surge Current
1600
Peak Half Sine Wave Forward Current (A)
1400
1200
1000
800
600
400
1
Instantaneous Forward Current (A)
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = Tj Max.
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
1000
Tj = Tj Max
100
Tj = 25°C
10
95PF(R) Series
85HF (R) Series
140 to 160
95PF(R) Series
85HF(R) Series
140 to 160
1
10
100
0
0.5
1
1.5
2
2.5
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Instantaneous Forward Voltage (V)
Fig. 2 - Maximum Non-Repetitive Surge Current
Fig. 4 - Forward Voltage Drop Characteristics
(K/W)
1
Steady State Value
RthJC = 0.27 K/W
(DC Operation)
Transient Thermal Impedance Z
thJC
0.1
95PF(R) Series
95PF(R) Series
140 to 160
0.01
0.0001 0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 5 - Thermal Impedance Z
thJC
Characteristics
Revision: 11-Jan-18
Document Number: 93533
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-95PF(R)...(W) High Voltage Series
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS-
1
95
2
PF
3
R
4
160
5
W
6
1
2
3
4
5
6
-
-
-
-
-
-
Vishay Semiconductors product
95 = standard device
PF = plastic package
None = stud normal polarity (cathode to stud)
R = stud reverse polarity (anode to stud)
Voltage code x 10 = V
RRM
(see Voltage Ratings table)
None = standard terminal
(see dimensions for 95PF(R)... - link at the end of datasheet)
W = wire terminal
(see dimensions for 95PF(R)...W - link at the end of datasheet)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95345
Revision: 11-Jan-18
Document Number: 93533
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
DO-203AB (DO-5) for 50PF(R)...(W), 80PF(R)...(W),
and 95PF(R)...(W) Series
DIMENSIONS FOR 80PF(R), 50PF(R), AND 95PF(R) SERIES
in millimeters
6.45 MIN.
Ø3
4.2 MAX.
1.2 MAX.
3.5 MIN.
4 MIN.
Plastic cap.
25.4 MAX.
11.45 MAX.
2.4 REF.
11 ± 0.4
1/4"28-UNF-2A
17.25 MAX.
Ø 15.95 MAX.
Ø 17.15 MAX.
18.9
+ 0.1
0.0
Revision: 20-Apr-16
Document Number: 95345
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
京公网安备 11010802033920号
EEWORLD
