UH4PBC-M3/HM3, UH4PCC-M3/HM3
www.vishay.com
Vishay General Semiconductor
High Current Density Surface Mount Ultrafast Rectifiers
eSMP
Series
K
®
FEATURES
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Oxide planar chip junction
• Ultrafast recovery times for high frequency
• Low forward voltage drop, low power loss
• Meets MSL level 1, per
LF maximum peak of 260 °C
J-STD-020,
Available
1
2
TO-277A (SMPC)
K
Cathode
Anode 1
Anode 2
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
MECHANICAL DATA
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
at I
F
= 2.0 A
T
J
max.
Package
Diode variations
2 x 2.0 A
100 V, 150 V
40 A
25 ns
0.77 V
175 °C
TO-277A (SMPC)
Common cathode
Case:
TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant and
AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
TYPICAL APPLICATIONS
For
use
in
high
frequency
rectification
and
freewheeling application in switching mode converters and
inverters for consumer computer, automotive, and
telecommunication applications.
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
total device
per diode
V
RRM
I
F(AV)
I
FSM
T
J
, T
STG
SYMBOL
UH4PBC
H4BC
100
4.0
2.0
40
-55 to +175
A
°C
UH4PCC
H4CC
150
V
A
UNIT
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load per diode
Operating junction and storage temperature range
Revision: 01-Jul-15
Document Number: 88991
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
UH4PBC-M3/HM3, UH4PCC-M3/HM3
www.vishay.com
Vishay General Semiconductor
TEST CONDITIONS
I
F
= 1.0 A
I
F
= 2.0 A
I
F
= 1.0 A
I
F
= 2.0 A
T
A
= 25 °C
V
F (1)
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
I
R (2)
SYMBOL
TYP.
0.84
0.93
0.68
0.77
-
6.4
20
t
rr
24
S
I
RM
Q
rr
C
J
0.3
5.4
88
21
-
-
-
-
-
-
A
nC
pF
MAX.
-
1.05
-
0.85
5
25
25
ns
μA
V
UNIT
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Instantaneous forward voltage
per diode
Reverse current per diode
Maximum reverse recovery time per diode
Typical reverse recovery time per diode
Typical softness factor (t
b
/t
a
)per diode
Typical reverse recovery current per diode
Typical stored charge per diode
Typical junction capacitance per diode
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width
40 ms
Rated V
R
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
I
F
= 1.0 A, dI/dt = 50 A/μs,
V
R
= 30 V, I
rr
= 0.1 I
RM
I
F
= 2 A, dI/dt = 200 A/μs,
V
R
= 200 V, I
rr
= 0.1 I
RM
T
A
= 125 °C
4.0 V, 1 MHz
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise specified)
PARAMETER
Typical thermal resistance per diode
SYMBOL
R
JA
R
JL
(1)
UH4PBC
60
4
UH4PCC
UNIT
°C/W
Note
(1)
Units mounted on recommended PCB 1 oz. pad layout
ORDERING INFORMATION
(Example)
PREFERRED P/N
UH4PCC-M3/86A
UH4PCC-M3/87A
UH4PCCHM3/86A
UH4PCCHM3_A/H
(1)
(1)
UNIT WEIGHT (g)
0.10
0.10
0.10
0.10
0.10
PACKAGE CODE
86A
87A
86A
87A
H
BASE QUANTITY
1500
6500
1500
6500
1500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
UH4PCCHM3/87A
(1)
(1)
Note
AEC-Q101 qualified
Revision: 01-Jul-15
Document Number: 88991
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
UH4PBC-M3/HM3, UH4PCC-M3/HM3
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25
C
unless otherwise noted)
5
100
Average Forward Rectified Current (A)
Instantaneous Reverse Current (µA)
Resistive or Inductive Load
4
T
A
= 150 °C
10
T
A
= 125 °C
3
1
2
T
L
measured
at the Cathode Band Terminal
0.1
T
A
= 25 °C
1
0.01
0
0
25
50
75
100
125
150
175
0.001
10
20
30
40
50
60
70
80
90
100
Lead Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
2.2
2.0
D = 0.5
D = 0.3
D = 0.2
D = 0.1
D = 1.0
D = 0.8
100
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0.4
T
D = t
p
/T
t
p
10
0.1
1
10
100
0.4
1.2
1.6
2.0
2.4
Junction Capacitance (pF)
Average Power Loss (W)
1.8
Average Forward Current (A)
Reverse Voltage (V)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
100
100
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
T
A
= 150 °C
10
T
A
= 125 °C
Junction to Ambient
1
10
T
A
= 25 °C
0.1
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
1
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Revision: 01-Jul-15
Document Number: 88991
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
UH4PBC-M3/HM3, UH4PCC-M3/HM3
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
TO-277A (SMPC)
0.187 (4.75)
0.175 (4.45)
K
0.016 (0.40)
0.006 (0.15)
Vishay General Semiconductor
0.262 (6.65)
0.250 (6.35)
0.242 (6.15)
0.238 (6.05)
2
1
0.171 (4.35)
0.167 (4.25)
0.146 (3.70)
0.134 (3.40)
0.087 (2.20)
0.075 (1.90)
0.047 (1.20)
0.039 (1.00)
Mounting Pad Layout
0.189 (4.80)
MIN.
0.189 (4.80)
0.173 (4.40)
0.155 (3.94)
NOM.
0.030 (0.75) NOM.
0.268
(6.80)
0.186 (4.72)
MIN.
0.049 (1.24)
0.037 (0.94)
0.084 (2.13) NOM.
0.053 (1.35)
0.041 (1.05)
Conform to JEDEC
®
TO-277A
0.050 (1.27)
MIN.
0.041
(1.04)
0.055 (1.40)
MIN.
Revision: 01-Jul-15
Document Number: 88991
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000
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