Data Sheet
FEATURES
Gain: 22 dB typical
Wide gain control range: 15 dB typical
Output third-order intercept (OIP3): 30 dBm typical
Output power for 1 dB compression (P1dB): 21 dBm typical
Saturated output power (P
SAT
): 22 dBm typical
DC supply: 4 V at 250 mA
No external matching required
Die size: 3.599 mm × 1.369 mm × 0.05 mm
71 GHz to 76 GHz,
E-Band Variable Gain Amplifier
HMC8120
GENERAL DESCRIPTION
The
HMC8120
is an integrated E-band, gallium arsenide (GaAs),
pseudomorphic (pHEMT), monolithic microwave integrated
circuit (MMIC), variable gain amplifier and/or driver amplifier
that operates from 71 GHz to 76 GHz. The
HMC8120
provides up
to 22 dB of gain, 21 dBm of output P1dB, 30 dBm of OIP3, and
22 dBm of P
SAT
while requiring only 250 mA from a 4 V power
supply. Two gain control voltages (V
CTL1
and V
CTL2
) are provided
to allow up to 15 dB of variable gain control. The
HMC8120
exhibits excellent linearity and is optimized for E-band
communications and high capacity wireless backhaul radio
systems. All data is taken with the chip in a 50 Ω test fixture
connected via a 3 mil wide × 0.5 mil thick × 7 mil long ribbon
on each port.
APPLICATIONS
E-band communication systems
High capacity wireless backhaul radio systems
Test and measurement
FUNCTIONAL BLOCK DIAGRAM
1
RFIN
2
3
HMC8120
4
5
RFOUT
1.6kΩ
1.6kΩ
6
28
27
26
25
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
8
7
V
GG1
/V
GG2
V
GG3
V
GG4
V
GG5
V
CTL1
V
CTL2
V
GG6
V
DD1
V
DD2
V
DD3
V
DD4
V
DD5
ENV
DET
V
DD6
V
REF
V
DET
Figure 1.
Rev. A
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13150-001
HMC8120* PRODUCT PAGE QUICK LINKS
Last Content Update: 02/23/2017
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DOCUMENTATION
Application Notes
•
AN-1363: Meeting Biasing Requirements of Externally
Biased RF/Microwave Amplifiers with Active Bias
Controllers
Data Sheet
•
HMC8120: 71 GHz to 76 GHz, E-Band Variable Gain
Amplifier Data Sheet
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DESIGN RESOURCES
•
HMC8120 Material Declaration
•
PCN-PDN Information
•
Quality And Reliability
•
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HMC8120
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
General Description ......................................................................... 1
Functional Block Diagram .............................................................. 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Absolute Maximum Ratings ............................................................ 4
Thermal Resistance ...................................................................... 4
ESD Caution .................................................................................. 4
Pin Configuration and Function Descriptions ............................. 5
Interface Schematics..................................................................... 6
Data Sheet
Typical Performance Characteristics ..............................................7
Theory of Operation ...................................................................... 12
Typical Application Circuit ........................................................... 13
Assembly Diagram ..................................................................... 14
Mounting and Bonding Techniques for Millimeterwave GaAs
MMICs ............................................................................................. 15
Handling Precautions ................................................................ 15
Mounting ..................................................................................... 15
Wire Bonding .............................................................................. 15
Outline Dimensions ....................................................................... 16
Ordering Guide .......................................................................... 16
REVISION HISTORY
2/16—Revision A: Initial Version
Rev. A | Page 2 of 16
Data Sheet
SPECIFICATIONS
T
A
= 25°C, V
DDx
= 4 V, V
CTLx
= −5 V, unless otherwise noted.
Table 1.
Parameter
OPERATING CONDITIONS
RF Frequency Range
PERFORMANCE
Gain
Gain Variation over Temperature
Gain Control Range
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (P
SAT
)
Output Third-Order Intercept (OIP3) at Maximum Gain
1
Input Return Loss
Output Return Loss
POWER SUPPLY
Total Supply Current (I
DD
)
2
1
2
HMC8120
Min
71
19
10
17
Typ
Max
76
Unit
GHz
dB
dB/°C
dB
dBm
dBm
dBm
dB
dB
mA
22
0.03
15
21
22
30
10
12
250
Data taken at power input (P
IN
) = −10 dBm/tone, 1 MHz spacing.
Set V
CTL1
/V
CTL2
= −5 V and then adjust V
GG1
/V
GG2
, V
GG3
, V
GG4
, V
GG5
, and V
GG6
from −2 V to 0 V to achieve a total drain current (I
DD
) = 250 mA.
Rev. A | Page 3 of 16
HMC8120
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter
Drain Bias Voltage (V
DD1
to V
DD6
)
Gate Bias Voltage (V
GG1
/V
GG2
, V
GG3
to V
GG6
)
Gain Control Voltage (V
CTL1
and V
CTL2
)
Maximum Junction Temperature (to Maintain
1 Million Hours Mean Time to Failure (MTTF))
Storage Temperature Range
Operating Temperature Range
Rating
4.5 V
−3 V to 0 V
−6 V to 0 V
175°C
−65°C to +150°C
−55°C to +85°C
Data Sheet
THERMAL RESISTANCE
Table 3. Thermal Resistance
Package Type
28-Pad Bare Die [CHIP]
1
θ
JC1
72.9
Unit
°C/W
Based on ABLEBOND® 84-1LMIT as die attach epoxy with thermal
conductivity of 3.6 W/mK.
ESD CAUTION
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
Rev. A | Page 4 of 16
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