performance switching of analog signals. Combining low
power, high speed (t
ON
: 35 ns, t
OFF
: 20 ns), low
on-resistance (R
DS(on)
: 40
)
and small physical size, the
DG9262, DG9263 is ideal for portable and battery powered
applications requiring high performance and efficient use of
board space.
The DG9262, DG9263 is built on Vishay Siliconix’s low
voltage BCD-15 process. Minimum ESD protection, per
Method 3015.7 is 2000 V. An epitaxial layer prevents
latchup. Break-before make is guaranteed for DG9262,
DG9263.
Each switch conducts equally well in both directions when
on, and blocks up to the power supply level when off.
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• Low Voltage Operation (- 2.7 V to 5 V)
• Low On-Resistance - R
DS(on)
: 40
• Fast Switching - t
ON
: 35 ns, t
OFF
: 20 ns
• Low Leakage - I
COM(on)
: 200-pA max.
• Low Charge Injection - Q
INJ
: 1 pC
• Low Power Consumption
• TTL/CMOS Compatible
• ESD Protection > 2000 V (Method 3015.7)
• Available in MSOP-8 and SOIC-8
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
•
•
•
•
•
•
•
Battery Operated Systems
Portable Test Equipment
Sample and Hold Circuits
Cellular Phones
Communication Systems
Military Radio
PBX, PABX Guidance and Control Systems
BENEFITS
•
•
•
•
Reduced Power Consumption
Simple Logic Interface
High Accuracy
Reduce Board Space
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
NC
1
COM
1
IN
2
GND
V+
IN
1
COM
2
NC
2
1
2
3
4
8
7
6
5
NO
1
COM
1
IN
2
GND
1
2
3
4
8
7
6
5
V+
IN
1
COM
2
NO
2
Top View
Top View
TRUTH TABLE - DG9262
Logic
0
1
Logic “0”
0.8
V
Logic “1”
2.4
V
Switch
On
Off
TRUTH TABLE - DG9263
Logic
0
1
Logic “0”
0.8
V
Logic “1”
2.4
V
Switch
Off
On
ORDERING INFORMATION
Temp Range
Package
Part Number
DG9262DY-E3
DG9262DY-T1
DG9262DY-T1-E3
DG9263DY-E3
DG9263DY-T1
DG9263DY-T1-E3
DG9262DQ-T1-E3
DG9263DQ-T1-E3
SOIC-8
- 40 °C to 85 °C
MSOP-8
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 70862
S11-1229–Rev. D, 20-Jun-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG9262, DG9263
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Parameter
Reference V+ to GND
IN, COM, NC, NO
a
Continuous Current (Any Terminal)
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
ESD (Method 3015.7)
Storage Temperature (D Suffix)
Power Dissipation
(Packages)
b
8-Pin Narrow Body SOIC
c
Limit
- 0.3 to + 13
- 0.3 to (V+ + 0.3)
± 20
± 40
> 2000
- 65 to 125
400
Unit
V
mA
V
°C
mW
Notes:
a. Signals on S
X
, D
X
, or IN
X
exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6.5 mW/°C above 75 °C.
SPECIFICATIONS
(V+ = 3 V)
Test Conditions
Unless Otherwise Specified
V+ = 3 V, ± 10 %, V
IN
= 0.8 V or 2.4 V
e
D Suffix
- 40 °C to 85 °C
Temp.
a
Full
V
NO
or V
NC
= 1.5 V, V+ = 2.7 V
I
COM
= 5 mA
V
NO
or V
NC
= 1.5 V
V
NO
or V
NC
= 1 and 2 V
V
NO
or V
NC
= 1 V/2 V, V
COM
= 2 V/1 V
V
COM
= 1 V/2 V, V
NO
or V
NC
= 2 V/1 V
V
COM
= V
NO
or V
NC
= 1 V/2 V
Room
Full
Room
Room
Room
Full
Room
Full
Room
Full
Full
Room
Full
Room
Full
Room
Room
Room
Room
f = 1 MHz
Room
Room
2.7
V+ = 3.3 V, V
IN
= 0 V or 3.3 V
- 100
- 5000
- 100
- 5000
- 200
- 10 000
Min.
b
0
50
0.4
4
5
5
10
Typ.
c
Max.
b
3
80
140
2
8
100
5000
100
5000
200
10 000
µA
120
200
50
120
5
pA
Unit
V
Parameter
Analog Switch
Analog Signal Range
d
Drain-Source On-Resistance
R
DS(on)
Match
d
R
DS(on)
Flatness
d
NO or NC Off Leakage
Current
g
COM Off Leakage Current
g
Channel-On Leakage Current
g
Digital Control
Input Current
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Charge Injection
d
Off-Isolation
Crosstalk
NC and NO Capacitance
Channel-On Capacitance
COM-Off Capacitance
Power Supply
Power Supply Range
Power Supply Current
Symbol
V
ANALOG
R
DS(on)
R
DS(on)
R
DS(on)
Flatness
I
NO/NC(off)
I
COM(off)
I
COM(on)
I
INL
or I
INH
t
ON
1
50
20
1
- 74
- 90
7
20
13
12
1
V
NO
or V
NC
= 1.5 V
t
OFF
Q
INJ
OIRR
X
TALK
C
(off)
C
COM(on)
C
COM(off)
V+
I+
C
L
= 1 nF, V
GEN
= 0 V, R
GEN
= 0
R
L
= 50
,
C
L
= 5 pF, f = 1 MHz
ns
pC
dB
pF
V
µA
Notes:
a. Room = 25 °C, full = as determined by the operating suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for design aid only, not guaranteed nor subject to production testing.
d. Guarantee by design, nor subjected to production test.
e. V
IN
= input voltage to perform proper function.
f. Difference of min and max values.
g. Guraranteed by 5 V leakage testing, not production tested.
www.vishay.com
2
Document Number: 70862
S11-1229–Rev. D, 20-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG9262, DG9263
Vishay Siliconix
SPECIFICATIONS
(V+ = 5 V)
Test Conditions
Unless Otherwise Specified
V+ = 5 V, ± 10 %, V
IN
= 0.8 V or 2.4 V
e
D Suffix
- 40 °C to 85 °C
Temp.
a
Full
V
NO
or V
NC
= 3.5 V, V+ = 4.5 V
I
COM
= 5 mA
V
NO
or V
NC
= 3.5 V
V
NO
or V
NC
= 1, 2 and 3 V
V
NO
or V
NC
= 1 V/4 V, V
COM
= 4 V/1 V
V
COM
= 1 V/4 V, V
NO
or V
NC
= 4 V/1 V
V
COM
= V
NO
or V
NC
= 1 V/4 V
Room
Full
Room
Room
Room
Full
Room
Full
Room
Full
Full
Room
Full
Room
Full
Room
Room
Room
Room
f = 1 MHz
Room
Room
2.7
V+ = 5.5 V, V
IN
= 0 V or 5.5 V
- 100
- 5000
- 100
- 5000
- 200
- 10 000
1
35
20
2
- 74
- 90
7
20
13
12
1
V
µA
pF
75
150
50
100
5
Min.
b
0
30
0.4
2
10
10
Typ.
c
Max.
b
5
60
75
2
6
100
5000
100
5000
200
10 000
µA
pA
Unit
V
Parameter
Analog Switch
Analog Signal Range
d
Drain-Source On-Resistance
R
DS(on)
Match
d
R
DS(on)
Flatness
f
NO or NC Off Leakage Current
COM Off Leakage Current
Channel-On Leakage Current
Digital Control
Input Current
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Charge Injection
d
Off-Isolation
Crosstalk
NC and NO Capacitance
Channel-On Capacitance
COM-Off Capacitance
Power Supply
Power Supply Range
Power Supply Current
Symbol
V
ANALOG
R
DS(on)
R
DS(on)
R
DS(on)
Flatness
I
NO/NC(off)
I
COM(off)
I
COM(on)
I
INL
or I
INH
t
ON
V
NO
or V
NC
= 3 V
t
OFF
Q
INJ
OIRR
X
TALK
C
(off)
C
D(on)
C
COM(off)
V+
I+
C
L
= 1 nF, V
GEN
= 0 V, R
GEN
= 0
R
L
= 50
,
C
L
= 5 pF, f = 1 MHz
ns
pC
dB
Notes:
a. Room = 25 °C, full = as determined by the operating suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for design aid only, not guaranteed nor subject to production testing.
d. Guarantee by design, nor subjected to production test.
e. V
IN
= input voltage to perform proper function.
f. Difference of min and max values.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 70862
S11-1229–Rev. D, 20-Jun-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG9262, DG9263
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25°C, unless otherwise noted)
2.0
1.5
1.0
V+ = 3 V
3000
2500
2000
Q
INJ
(pC)
I
SUPPLY
(A)
0.5
0.0
- 0.5
- 1.0
- 1.5
- 2.0
0.0
0.5
1.0
1.5
V
COM
2.0
2.5
3.0
1500
1000
500
0
V+ = 3 V
- 500
0
1
2
V
IN
3
4
5
V+ = 5 V
Charge Injection
Supply Current vs. V
IN
10 nA
- 40
1 nA
- 60
OFF-Isolation (dB)
125
I
COM(off)
(A)
100 pA
I
COM(off)
10 pA
I
COM(on)
- 80
- 100
1 pA
- 120
0.1 pA
25
45
65
85
105
Temperature (°C)
- 140
0.001 M
0.01 M
0.1 M
Frequency (Hz)
1M
10 M
Leakage Current vs. Temperature
Off-Isolation vs. Frequency
2.5
2.0
1.5
V+ = 5 V
80
60
1.0
I
OFF
(pA)
V+ = 3 V
0.5
0.0
- 0.5
- 1.0
r
DS(on)
()
I
COM
40
V+ = 5 V
I
NO/NC
20
- 1.5
- 2.0
- 2.5
0
1
2
V
COM
3
4
5
0
0
1
2
V
COM
3
4
5
Off-Leakage vs. Voltage at 25 °C
R
DS
vs. V
COM
www.vishay.com
4
Document Number: 70862
S11-1229–Rev. D, 20-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG9262, DG9263
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25°C, unless otherwise noted)
80
70
V+ = 3 V
60
60
r
DS(on)
()
85 °C
t
ON
50
t
ON
/ t
OFF
(ns)
25 °C
40
40 °C
40
30
t
OFF
20
10
20
0
0.0
0.5
1.0
1.5
V
COM
2.0
2.5
3.0
0
- 60
- 30
0
30
60
90
120
Temperature (°C)
R
DS
vs. V
COM
120
2.25
2.00
1.75
80
V
IN
(sw)
T (ns)
Switching Time vs. Temperature
100
1.50
1.25
1.00
60
t
ON
40
t
OFF
20
0.75
0.50
1.5
2.0
2.5
3.0
V+
3.5
4.0
4.5
5.0
2
3
4
V+
5
6
0
t
ON
/t
OFF
vs. Power Supply Voltage
Input Switching Point vs. Power Supply Voltage
Document Number: 70862
S11-1229–Rev. D, 20-Jun-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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