ZXMP4A57E6
40V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
ADVANCE INFORMATION
V
(BR)DSS
-40V
R
DS(ON)
max
80mΩ @ V
GS
= -10V
150mΩ @ V
GS
= -4.5V
I
D
max
T
A
= +25°C
-3.7 A
-2.8 A
Features and Benefits
Fast Switching Speed
Low Gate Drive
Low Input Capacitance
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Description
This MOSFET is designed to minimize the on-state resistance and yet
maintain superior switching performance, making it ideal for high
efficiency power management applications.
Mechanical Data
Case: SOT26
Case Material: Molded Plastic; UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
e3
Weight 0.018 grams (Approximate)
Applications
Motor Control
DC-DC Converters
Power Management Functions
Uninterrupted Power Supply
SOT26
D
G
S
Top View
Top View
Pin-Out
Equivalent Circuit
Ordering Information
(Notes 4 & 5)
Part Number
ZXMP4A57E6TA
ZXMP4A57E6QTA
Notes:
Compliance
Standard
Automotive
Case
SOT26
SOT26
Quantity per reel
3,000
3,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT26
4A57
Date Code Key
Year
Code
Month
Code
4A57 = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: C = 2015)
M or M = Month (ex: 9 = September)
2015
C
Jan
1
Feb
2
2016
D
Mar
3
2017
E
Apr
4
May
5
YM
2018
F
Jun
6
2019
G
Jul
7
Aug
8
2020
H
Sep
9
2021
I
Oct
O
Nov
N
2022
J
Dec
D
ZXMP4A57E6
Document Number DS35238 Rev. 3 - 2
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February 2015
© Diodes Incorporated
ZXMP4A57E6
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
V
GS
(Note 7)
Continuous Drain Current
Pulsed Drain Current
V
GS
= 10V
V
GS
= 10V
T
A
= +70°C (Note 7)
(Note 6)
(Note 8)
(Note 7)
(Note 8)
I
DM
I
S
I
SM
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
I
D
Value
-40
20
-3.7
-2.9
-2.9
-18
-2.6
-18
A
A
A
A
Unit
V
V
ADVANCE INFORMATION
Gate-Source Voltage
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Linear Derating Factor
(Note 6)
P
D
(Note 7)
(Note 6)
(Note 7)
R
θJA
T
J
, T
STG
Symbol
Value
1.1
8.8
1.7
13.7
113
73
-55 to +150
Unit
W
mW/°C
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Notes:
°C/W
°C
6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. Same as Note 4, except the device is measured at t
5 seconds.
8. Same as Note 4, except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.
ZXMP4A57E6
Document Number DS35238 Rev. 3 - 2
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Thermal Characteristics
ADVANCE INFORMATION
1.2
-I
D
Drain Current (A)
10
Limited
Max Power Dissipation (W)
R
DS(ON)
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
1
DC
1s
100ms
10ms
1ms
100us
Single Pulse, T
amb
=25°C
100m
10m
1
10
-V
DS
Drain-Source Voltage (V)
Temperature (°C)
P-channel Safe Operating Area
Derating Curve
Thermal Resistance (°C/W)
100
80
D=0.5
60
40
20
D=0.1
Single Pulse
D=0.2
D=0.05
Maximum Power (W)
100
Single Pulse
T
amb
=25°C
10
1
100µ
1m
10m 100m
1
10
100
1k
0
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
ZXMP4A57E6
Document Number DS35238 Rev. 3 - 2
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© Diodes Incorporated
ZXMP4A57E6
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS
(@T
A
= +25°C, unless otherwise specified.)
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
g
fs
V
SD
t
rr
Q
rr
C
iss
C
oss
C
rss
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
-40
-1.0
Typ
7.6
-0.86
17.4
11.1
833
122
78
7
15.8
3.6
2.7
2.5
3.3
47
21
Max
-0.5
100
-3.0
0.080
0.150
-0.95
ns
V
DD
= -20V, V
GS
= -10V
I
D
= -1A, R
G
6.0Ω
nC
pF
V
DS
= -20V, V
GS
= 0V
f = 1MHz
V
GS
= -4.5V
V
GS
= -10V
V
DS
= -20V
I
D
= -4A
Unit
V
µA
nA
V
Ω
S
V
ns
nC
Test Condition
I
D
= -250µA, V
GS
= 0V
V
DS
= -40V, V
GS
= 0V
V
GS
=
20V,
V
DS
= 0V
I
D
= -250µA, V
DS
= V
GS
V
GS
= -10V, I
D
= -4A
V
GS
= -4.5V, I
D
= -2A
V
DS
= -15V, I
D
= -4A
I
S
= -4A, V
GS
= 0V
I
S
= -1.8A, di/dt = 100A/µs
ADVANCE INFORMATION
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 9)
Forward Transconductance (Notes 9 & 10)
Diode Forward Voltage (Note 9)
Reverse Recovery Time (Note 10)
Reverse Recovery Charge (Note 10)
DYNAMIC CHARACTERISTICS
(Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 11)
Total Gate Charge (Note 11)
Gate-Source Charge (Note 11)
Gate-Drain Charge (Note 11)
Turn-On Delay Time (Note 11)
Turn-On Rise Time (Note 11)
Turn-Off Delay Time (Note 11)
Turn-Off Fall Time (Note 11)
Notes:
9. Measured under pulsed conditions. Pulse width
300µs; duty cycle
2%.
10. For design aid only, not subject to production testing.
11. Switching characteristics are independent of operating junction temperatures.
ZXMP4A57E6
Document Number DS35238 Rev. 3 - 2
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February 2015
© Diodes Incorporated
ZXMP4A57E6
Typical Characteristics
ADVANCE INFORMATION
T = 25°C
10V
10
-I
D
Drain Current (A)
-I
D
Drain Current (A)
5V
4.5V
4V
3.5V
3V
T = 150°C
10V
10
5V
4.5V
4V
3.5V
3V
1
1
2.5V
0.1
2.5V
-V
GS
0.1
2V
-V
GS
0.01
0.1
1
10
0.01
0.1
1
10
-V
DS
Drain-Source Voltage (V)
-V
DS
Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
1.6
10
Normalised R
DS(on)
and V
GS(th)
V
GS
= -10V
-I
D
Drain Current (A)
1.4
1.2
1.0
I
D
= - 4A
R
DS(on)
T = 150°C
1
T = 25°C
V
GS(th)
V
DS
= -10V
0.8
0.6
-50
0
V
GS
= V
DS
I
D
= -250uA
0.1
2
3
4
50
100
150
-V
GS
Gate-Source Voltage (V)
Tj Junction Temperature (°C)
Typical Transfer Characteristics
R
DS(on)
Drain-Source On-Resistance
100
Normalised Curves v Temperature
-I
SD
Reverse Drain Current (A)
10
1
0.1
0.01
1E-3
V
GS
= 0V
T = 150°C
T = 25°C
2.5V
3V
3.5V
-V
GS
10
4V
1
4.5V
5V
7V
T = 25°C
10V
0.1
0.01
0.01
1E-4
0.2
0.4
0.6
0.8
1.0
1.2
0.1
1
10
On-Resistance v Drain Current
-I
D
Drain Current (A)
-V
SD
Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
ZXMP4A57E6
Document Number DS35238 Rev. 3 - 2
5 of 8
www.diodes.com
February 2015
© Diodes Incorporated
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