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BLF9G38LS-90PJ

Description
RF MOSFET Transistors Power LDMOS transistor
Categorysemiconductor    Discrete semiconductor   
File Size1MB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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RF MOSFET Transistors Power LDMOS transistor

BLF9G38LS-90PJ Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerNXP
Product CategoryRF MOSFET Transistors
TechnologySi
PackagingCut Tape
PackagingReel
Factory Pack Quantity100
BLF9G38LS-90P
Power LDMOS transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
90 W LDMOS power transistor for base station applications at frequencies from
3400 MHz to 3600 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in the Doherty application demo circuit.
Test signal
IS-95
[1]
f
(MHz)
3400 to 3600
V
DS
(V)
28
P
L(AV)
(W)
15.1
G
p
(dB)
12.7
D
(%)
37.0
ACPR
(dBc)
37
[1]
Test signal: IS-95; pilot, paging, sync, 6 traffic channels with Walsh codes 8
13; PAR = 9.7 dB at 0.01 %
probability.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low thermal resistance providing excellent thermal stability
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifier for LTE base stations and multi carrier applications in the
3400 MHz to 3600 MHz frequency range
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