ZVN4206AVSTOB datasheet, PDF - EEWORLD Datasheet

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ZVN4206AVSTOB: DescriptionMOSFET Avalanche; Categorysemiconductor Discrete semiconductor; File Size97KB，3 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/

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MOSFET Avalanche

ZVN4206AVSTOB Parametric

Parameter Name	Attribute value
Product Attribute	Attribute Value
Manufacturer	Diodes
Product Category	MOSFET
RoHS	Details
Technology	Si
Mounting Style	Through Hole
Package / Case	TO-92-3
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	600 mA
Rds On - Drain-Source Resistance	1.5 Ohms
Vgs - Gate-Source Voltage	20 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Configuration	Single
Pd - Power Dissipation	700 mW
Channel Mode	Enhancement
Packaging	Bulk
Height	4.01 mm
Length	4.77 mm
Product	MOSFET Small Signal
Transistor Type	1 N-Channel
Type	FET
Width	2.41 mm
Fall Time	12 ns
Rise Time	12 ns
Factory Pack Quantity	4000
Typical Turn-Off Delay Time	12 ns
Typical Turn-On Delay Time	8 ns
Unit Weight	0.016000 oz

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N-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 2 – JUNE 94

FEATURES

* 60 Volt V

* R

DS(on)

= 1

Ω

ZVN4206A

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Drain-Source Voltage

Continuous Drain Current at T

amb

=25°C

Pulsed Drain Current

Gate-Source Voltage

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

tot

stg

E-LINE

TO92 COMPATIBLE

VALUE

UNIT

°C

600

0.7

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Drain-Source Breakdown

Voltage

Gate-Source Threshold

Voltage

Gate-Body Leakage

Zero Gate Voltage Drain

Current

On-State Drain Current(1)

Static Drain-Source On-State

Resistance (1)

SYMBOL MIN.

DSS

GS(th)

GSS

DSS

D(on)

DS(on)

300

100

1.5

1.3

100

MAX. UNIT CONDITIONS.

µA

Ω

≈25V,

=1.5A

=25V, V

=0V, f=1MHz

=1mA, V

=0V

ID=1mA, V

= V

=± 20V, V

=0V

=60V, V

=48V, V

=0V, T=125°C

(2)

=25V, V

=10V

=10V,I

=1.5A

=5V,I

=500mA

=25V,I

=1.5A

Forward Transconductance(1)(2 g

)

Input Capacitance (2)

Common Source Output

Capacitance (2)

Reverse Transfer Capacitance

(2)

Turn-On Delay Time (2)(3)

Rise Time (2)(3)

Turn-Off Delay Time (2)(3)

Fall Time (2)(3)

iss

oss

rss

d(on)

d(off)

(1) Measured under pulsed conditions. Width=300µs. Duty cycle

≤2%

(2) Sample test.

(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator

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