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BUK9M53-60EX

Description
MOSFET BUK9M53-60E/MLFPAK/REEL 7" Q1/
Categorysemiconductor    Discrete semiconductor   
File Size719KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BUK9M53-60EX Overview

MOSFET BUK9M53-60E/MLFPAK/REEL 7" Q1/

BUK9M53-60EX Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerNXP
Product CategoryMOSFET
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseLFPAK33-5
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage60 V
Id - Continuous Drain Current17 A
Rds On - Drain-Source Resistance43 mOhms
Vgs th - Gate-Source Threshold Voltage1.4 V
Vgs - Gate-Source Voltage10 V
Qg - Gate Charge6 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
ConfigurationSingle
Pd - Power Dissipation36 W
Channel ModeEnhancement
PackagingCut Tape
PackagingMouseReel
PackagingReel
Transistor Type1 N-Channel
Fall Time6.5 ns
Rise Time7.6 ns
Factory Pack Quantity1500
Typical Turn-Off Delay Time9.9 ns
Typical Turn-On Delay Time5.6 ns
Unit Weight0.003034 oz
BUK9M53-60E
19 September 2016
N-channel 60 V, 53 mΩ logic level MOSFET in LFPAK33
Product data sheet
1. General description
Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS
technology. This product has been designed and qualified to AEC Q101 standard for use
in high performance automotive applications.
2. Features and benefits
Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with V
GS(th)
rating of greater than 0.5 V at 175 °C
3. Applications
12 V automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
25 °C ≤ T
j
≤ 175 °C
V
GS
= 5 V; T
mb
= 25 °C;
Fig. 2
T
mb
= 25 °C;
Fig. 1
V
GS
= 5 V; I
D
= 5 A; T
j
= 25 °C;
Fig. 11
Min
-
-
-
Typ
-
-
-
Max
60
17
36
Unit
V
A
W
Static characteristics
drain-source on-state
resistance
gate-drain charge
-
43
53
Dynamic characteristics
Q
GD
I
D
= 5 A; V
DS
= 48 V; V
GS
= 5 V;
T
j
= 25 °C;
Fig. 13; Fig. 14
-
2.4
-
nC
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