2N6796, 2N6798, 2N6800, 2N6802
Qualified Levels:
JAN, JANTX, JANTXV
and JANS*
Available on
commercial
versions
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/557
DESCRIPTION
This family of switching transistors is military qualified up to the JANTXV level for high-
reliability applications. The 2N6798 part number is also qualified to the JANS level. These
devices are also available in a low profile U-18 LCC surface mount package. Microsemi also
offers numerous other transistor products to meet higher and lower power ratings with various
switching speed requirements in both through-hole and surface-mount packages.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
•
•
JEDEC registered 2N6796, 2N6798, 2N6800 and 2N6802 number series.
JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/557.
*JANS qualification is available on 2N6798 only.
(See
part nomenclature
for all available options.)
RoHS compliant versions available (commercial grade only).
•
TO-205AF
(TO-39)
Package
APPLICATIONS / BENEFITS
•
•
Lightweight top-hat design with flexible terminals offers a variety of mounting flexibility.
Military and other high-reliability applications.
Also available in:
U-18 LCC package
(surface mount)
2N6796U, 2N6798U,
2N6800U & 2N6802U
MAXIMUM RATINGS
@ T
A
= +25 ºC unless otherwise stated
Parameters / Test Conditions
Operating & Storage Junction Temperature Range
Thermal Resistance Junction-to-Case
Total Power Dissipation
@ T
A
= +25 °C
(1)
@ T
C
= +25 °C
Drain-Source Voltage, dc
2N6796
2N6798
2N6800
2N6802
Gate-Source Voltage, dc
(2)
Drain Current, dc @ T
C
= +25 ºC
2N6796
2N6798
2N6800
2N6802
(2)
Drain Current, dc @ T
C
= +100 ºC
2N6796
2N6798
2N6800
2N6802
(3)
Off-State Current (Peak Total Value)
2N6796
2N6798
2N6800
2N6802
Source Current
2N6796
2N6798
2N6800
2N6802
See notes on next page.
Symbol
T
J
& T
stg
R
ӨJC
P
T
Value
-55 to +150
5.0
0.8
25
100
200
400
500
± 20
8.0
5.5
3.0
2.5
5.0
3.5
2.0
1.5
32
22
14
11
8.0
5.5
3.0
2.5
Unit
o
°C
C/W
W
V
DS
V
GS
I
D1
V
V
A
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
I
D2
A
I
DM
A (pk)
I
S
A
T4-LDS-0047, Rev. 3 (121483)
©2012 Microsemi Corporation
Page 1 of 9
2N6796, 2N6798, 2N6800, 2N6802
Notes:
1. Derate linearly 0.2 W/°C for T
C
> +25 °C.
2. The following formula derives the maximum theoretical I
D
limit. I
D
is also limited by package and internal wires and may be limited due to
pin diameter.
3. I
DM
= 4 x I
D1
as calculated in note 2.
MECHANICAL and PACKAGING
•
•
•
•
•
CASE: Hermetically sealed, kovar base, nickel cap.
TERMINALS: Tin/lead solder dip nickel plate or RoHS compliant pure tin plate (commercial grade only).
MARKING: Part number, date code, manufacturer’s ID.
WEIGHT: Approximately 1.064 grams.
See
Package Dimensions
on last page.
PART NOMENCLATURE
JAN
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS level (2N6798)
Blank = Commercial
JEDEC type number
(see
Electrical Characteristics
table)
2N6796
(e3)
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Symbol
di/dt
I
F
R
G
V
DD
V
DS
V
GS
SYMBOLS & DEFINITIONS
Definition
Rate of change of diode current while in reverse-recovery mode, recorded as maximum value.
Forward current
Gate drive impedance
Drain supply voltage
Drain source voltage, dc
Gate source voltage, dc
T4-LDS-0047, Rev. 3 (121483)
©2012 Microsemi Corporation
Page 2 of 9
2N6796, 2N6798, 2N6800, 2N6802
ELECTRICAL CHARACTERISTICS
@ T
A
= +25 °C, unless otherwise noted
Parameters / Test Conditions
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 1.0 mA
Gate-Source Voltage (Threshold)
V
DS
≥ V
GS
, I
D
= 0.25 mA
V
DS
≥ V
GS
, I
D
= 0.25 mA, T
J
= +125°C
V
DS
≥ V
GS
, I
D
= 0.25 mA, T
J
= -55°C
Gate Current
V
GS
= ± 20 V, V
DS
= 0 V
V
GS
= ± 20 V, V
DS
= 0 V, T
J
= +125°C
Drain Current
V
GS
= 0 V, V
DS
V
GS
= 0 V, V
DS
V
GS
= 0 V, V
DS
V
GS
= 0 V, V
DS
Drain Current
V
GS
= 0 V, V
DS
V
GS
= 0 V, V
DS
V
GS
= 0 V, V
DS
V
GS
= 0 V, V
DS
= 80 V
= 160 V
= 320 V
= 400 V
= 80 V, T
J
= +125 °C
= 160 V, T
J
= +125 °C
= 320 V, T
J
= +125 °C
= 400 V, T
J
= +125 °C
2N6796
2N6798
2N6800
2N6802
2N6796
2N6798
2N6800
2N6802
2N6796
2N6798
2N6800
2N6802
2N6796
2N6798
2N6800
2N6802
2N6796
2N6798
2N6800
2N6802
Symbol
Min.
Max.
Unit
V
(BR)DSS
100
200
400
500
2.0
1.0
4.0
5.0
±100
±200
V
V
GS(th)1
V
GS(th)2
V
GS(th)3
I
GSS1
I
GSS2
V
nA
I
DSS1
25
µA
I
DSS2
0.25
mA
Static Drain-Source On-State Resistance
V
GS
= 10 V, I
D
= 5.0 A pulsed
V
GS
= 10 V, I
D
= 3.5 A pulsed
V
GS
= 10 V, I
D
= 2.0 A pulsed
V
GS
= 10 V, I
D
= 1.5 A pulsed
Static Drain-Source On-State Resistance
V
GS
= 10 V, I
D
= 8.0 A pulsed
V
GS
= 10 V, I
D
= 5.5 A pulsed
V
GS
= 10 V, I
D
= 3.0 A pulsed
V
GS
= 10 V, I
D
= 2.5 A pulsed
Static Drain-Source On-State Resistance
T
J
= +125°C
V
GS
= 10 V, I
D
= 5.0 A pulsed
V
GS
= 10 V, I
D
= 3.5 A pulsed
V
GS
= 10 V, I
D
= 2.0 A pulsed
V
GS
= 10 V, I
D
= 1.5 A pulsed
Diode Forward Voltage
V
GS
= 0 V, I
D
= 8.0 A pulsed
V
GS
= 0 V, I
D
= 5.5 A pulsed
V
GS
= 0 V, I
D
= 3.0 A pulsed
V
GS
= 0 V, I
D
= 2.5 A pulsed
r
DS(on)1
0.18
0.40
1.00
1.50
0.195
0.420
1.100
1.600
Ω
r
DS(on)2
Ω
2N6796
2N6798
2N6800
2N6802
2N6796
2N6798
2N6800
2N6802
r
DS(on)3
0.35
0.75
2.40
3.50
1.5
1.4
1.4
1.4
Ω
V
SD
V
T4-LDS-0047, Rev. 3 (121483)
©2012 Microsemi Corporation
Page 3 of 9
2N6796, 2N6798, 2N6800, 2N6802
ELECTRICAL CHARACTERISTICS
@ T
A
= +25 °C, unless otherwise noted (continued)
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Gate Charge:
On-State Gate Charge
V
GS
= 10 V, I
D
= 8.0 A, V
DS
= 50 V
V
GS
= 10 V, I
D
= 5.5 A, V
DS
= 50 V
V
GS
= 10 V, I
D
= 3.0 A, V
DS
= 50 V
V
GS
= 10 V, I
D
= 2.5 A, V
DS
= 50 V
Gate to Source Charge
V
GS
= 10 V, I
D
= 8.0 A, V
DS
V
GS
= 10 V, I
D
= 5.5 A, V
DS
V
GS
= 10 V, I
D
= 3.0 A, V
DS
V
GS
= 10 V, I
D
= 2.5 A, V
DS
Gate to Drain Charge
V
GS
= 10 V, I
D
= 8.0 A, V
DS
V
GS
= 10 V, I
D
= 5.5 A, V
DS
V
GS
= 10 V, I
D
= 3.0 A, V
DS
V
GS
= 10 V, I
D
= 2.5 A, V
DS
= 50 V
= 50 V
= 50 V
= 50 V
= 50 V
= 50 V
= 50 V
= 50 V
Symbol
Min.
Max.
Unit
2N6796
2N6798
2N6800
2N6802
2N6796
2N6798
2N6800
2N6802
2N6796
2N6798
2N6800
2N6802
Q
g(on)
28.51
42.07
34.75
33.00
6.34
5.29
5.75
4.46
16.59
28.11
16.59
28.11
nC
Q
gs
nC
Q
gd
nC
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-on delay time
I
D
= 8.0 A, V
GS
= +10 V, R
G
I
D
= 5.5 A, V
GS
= +10 V, R
G
I
D
= 3.0 A, V
GS
= +10 V, R
G
I
D
= 2.5 A, V
GS
= +10 V, R
G
Rinse time
I
D
= 8.0 A, V
GS
I
D
= 5.5 A, V
GS
I
D
= 3.0 A, V
GS
I
D
= 2.5 A, V
GS
= +10 V, R
G
= +10 V, R
G
= +10 V, R
G
= +10 V, R
G
= 7.5
Ω,
V
DD
= 7.5
Ω,
V
DD
= 7.5
Ω,
V
DD
= 7.5
Ω,
V
DD
= 7.5
Ω,
V
DD
= 7.5
Ω,
V
DD
= 7.5
Ω,
V
DD
= 7.5
Ω,
V
DD
= 7.5
Ω,
V
DD
= 7.5
Ω,
V
DD
= 7.5
Ω,
V
DD
= 7.5
Ω,
V
DD
= 7.5
Ω,
V
DD
= 7.5
Ω,
V
DD
= 7.5
Ω,
V
DD
= 7.5
Ω,
V
DD
= 8.0 A
= 5.5 A
= 3.0 A
= 2.5 A
= 30 V
= 77 V
= 176 V
= 225 V
= 30 V
= 77 V
= 176 V
= 225 V
= 30 V
= 77 V
= 176 V
= 225 V
= 30 V
= 77 V
= 176 V
= 225 V
2N6796
2N6798
2N6800
2N6802
2N6796
2N6798
2N6800
2N6802
2N6796
2N6798
2N6800
2N6802
2N6796
2N6798
2N6800
2N6802
2N6796
2N6798
2N6800
2N6802
Symbol
Min.
Max.
Unit
t
d(on)
30
ns
t
r
75
50
35
30
40
50
55
55
45
40
35
30
300
500
700
900
ns
Turn-off delay time
I
D
= 8.0 A, V
GS
= +10 V, R
G
I
D
= 5.5 A, V
GS
= +10 V, R
G
I
D
= 3.0 A, V
GS
= +10 V, R
G
I
D
= 2.5 A, V
GS
= +10 V, R
G
Fall time
I
D
= 8.0 A, V
GS
I
D
= 5.5 A, V
GS
I
D
= 3.0 A, V
GS
I
D
= 2.5 A, V
GS
= +10 V, R
G
= +10 V, R
G
= +10 V, R
G
= +10 V, R
G
t
d(off)
ns
t
f
ns
Diode Reverse Recovery Time
di/dt ≤ 100 A/µs, V
DD
≤ 50 V, I
F
di/dt ≤ 100 A/µs, V
DD
≤ 50 V, I
F
di/dt ≤ 100 A/µs, V
DD
≤ 50 V, I
F
di/dt ≤ 100 A/µs, V
DD
≤ 50 V, I
F
t
rr
ns
T4-LDS-0047, Rev. 3 (121483)
©2012 Microsemi Corporation
Page 4 of 9
2N6796, 2N6798, 2N6800, 2N6802
GRAPHS
THERMAL RESPONSE (Z
ӨJC
)
t
1
, RECTANGLE PULSE DURATION (seconds)
FIGURE 1
– Normalized Transient Thermal Impedance
T4-LDS-0047, Rev. 3 (121483)
©2012 Microsemi Corporation
Page 5 of 9
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