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BLF6G22-180PN112

Description
RF MOSFET Transistors LDMOS TNS
Categorysemiconductor    Discrete semiconductor   
File Size1MB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BLF6G22-180PN112 Overview

RF MOSFET Transistors LDMOS TNS

BLF6G22-180PN112 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerNXP
Product CategoryRF MOSFET Transistors
RoHSDetails
Transistor PolarityN-Channel
Id - Continuous Drain Current1.6 A
Vds - Drain-Source Breakdown Voltage65 V
Rds On - Drain-Source Resistance165 mOhms
TechnologySi
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Package / CaseSOT-539A-5
PackagingTube
ConfigurationDual Common Source
Height5.33 mm
Length41.28 mm
TypeRF Power MOSFET
Width10.29 mm
Channel ModeEnhancement
Factory Pack Quantity60
Vgs - Gate-Source Voltage13 V
BLF6G22-180PN;
BLF6G22LS-180PN
Power LDMOS transistor
Rev. 6 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
180 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
Table 1.
Typical performance
RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Mode of operation
2-carrier W-CDMA
[1]
f
(MHz)
2110 to 2170
V
DS
(V)
32
P
L(AV)
(W)
50
G
p
(dB)
17.5
D
(%)
27.5
ACPR
(dBc)
35
[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 5 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz,
a supply voltage of 32 V and an I
Dq
of 1600 mA:
Average output power = 50 W
Power gain = 17.5 dB (typ)
Efficiency = 27.5 %
ACPR =
35
dBc
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (2000 MHz to 2200 MHz)
Internally matched for ease of use
Qualified up to a supply voltage of 32 V

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