BSZ180P03NS3EGATMA1 datasheet, PDF

Datasheet> All Categories > Discrete semiconductor> The transistor> BSZ180P03NS3EGATMA1

BSZ180P03NS3EGATMA1: DescriptionMOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3; CategoryDiscrete semiconductor The transistor; File Size617KB，9 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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BSZ180P03NS3EGATMA1 Overview

MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3

BSZ180P03NS3EGATMA1 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	conform to
Maker	Infineon
package instruction	SMALL OUTLINE, S-PDSO-F5
Contacts	8
Reach Compliance Code	not_compliant
ECCN code	EAR99
Factory Lead Time	26 weeks
Other features	ESD PROTECTED
Avalanche Energy Efficiency Rating (Eas)	48 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (ID)	9 A
Maximum drain-source on-resistance	0.018 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	S-PDSO-F5
JESD-609 code	e3
Number of components	1
Number of terminals	5
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	SQUARE
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	P-CHANNEL
Maximum pulsed drain current (IDM)	158 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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BSZ180P03NS3EGATMA1 Related Products

	BSZ180P03NS3EGATMA1	BSZ180P03NS3E G
Description	MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3	MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3
Configuration	SINGLE WITH BUILT-IN DIODE	Single

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