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BSZ180P03NS3E G

Description
MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3
Categorysemiconductor    Discrete semiconductor   
File Size617KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BSZ180P03NS3E G Overview

MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3

BSZ180P03NS3E G Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerInfineon
Product CategoryMOSFET
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTSDSON-8
Number of Channels1 Channel
Transistor PolarityP-Channel
Vds - Drain-Source Breakdown Voltage- 30 V
Id - Continuous Drain Current- 39.6 A
Rds On - Drain-Source Resistance13.5 mOhms
Vgs th - Gate-Source Threshold Voltage- 3.1 V
Vgs - Gate-Source Voltage25 V
Qg - Gate Charge30 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle
Pd - Power Dissipation40 W
Channel ModeEnhancement
PackagingCut Tape
PackagingMouseReel
PackagingReel
Height1.1 mm
Length3.3 mm
Transistor Type1 P-Channel
Width3.3 mm
Forward Transconductance - Min18 S
Fall Time3 ns
Rise Time11 ns
Factory Pack Quantity5000
Typical Turn-Off Delay Time20 ns
Typical Turn-On Delay Time11 ns
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BSZ180P03NS3E G Related Products

BSZ180P03NS3E G BSZ180P03NS3EGATMA1
Description MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3 MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3
Configuration Single SINGLE WITH BUILT-IN DIODE

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