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BLF571112

Description
RF MOSFET Transistors Trans MOSFET N-CH 110V 3.6A 3-Pin
Categorysemiconductor    Discrete semiconductor   
File Size1MB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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RF MOSFET Transistors Trans MOSFET N-CH 110V 3.6A 3-Pin

BLF571112 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerNXP
Product CategoryRF MOSFET Transistors
RoHSDetails
Transistor PolarityN-Channel
Id - Continuous Drain Current3.6 A
Vds - Drain-Source Breakdown Voltage110 V
Rds On - Drain-Source Resistance1.34 Ohms
TechnologySi
Gain27.5 dB
Output Power20 W
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Package / CaseSOT-467C-3
PackagingTube
ConfigurationSingle
Operating Frequency225 MHz
Forward Transconductance - Min1.8 S
Pd - Power Dissipation20 W
Factory Pack Quantity60
Vgs - Gate-Source Voltage11 V
Vgs th - Gate-Source Threshold Voltage1.7 V
BLF571
HF / VHF power LDMOS transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
A 20 W LDMOS RF transistor for broadcast applications and industrial applications in the
HF and VHF band.
Table 1.
Production test performance
f
(MHz)
CW
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
225
V
DS
(V)
50
P
L
(W)
20
G
p
(dB)
27.5
D
(%)
70
Mode of operation
1.2 Features
Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an I
Dq
of 50 mA:
Average output power = 20 W
Power gain = 27.5 dB
Efficiency = 70 %
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (10 MHz to 500 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
Broadcast transmitter applications
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