BSR315P
SIPMOS
®
Small-Signal-Transistor
Features
• P-Channel
• Enhancement mode
• Logic level
Product Summary
V
DS
R
DS(on),max
I
D
-60
0.8
-0.62
V
W
A
• Footprint and pinning compatible with SOT-23 / SuperSOT-23 packages
• Avalanche rated
• Pb-free lead finishing; RoHS compliant
• Qualified according to AEC Q101
• Halogen free according to IEC61249-2-21
SC-59
Type
BSR315P
Package
PG-SC59
Tape and reel information
H6327 = 3000 pcs. / reel
Marking
LB
Halogen-free
Yes
Packing
Non dry
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
steady state
Continuous drain current
I
D
T
A
=25 °C
T
A
=70 °C
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
ESD class
Soldering temperature
IEC climatic category; DIN IEC 68-1
I
D,pulse
E
AS
V
GS
P
tot
T
j
,
T
stg
JESD22-C101
T
A
=25 °C
T
A
=25 °C
I
D
=0.62 A,
R
GS
=25
W
-0.62
-0.49
-2.48
24
±20
0.5
-55 ... 150
1A (250V to 500V)
260 °C
55/150/56
mJ
V
W
°C
A
Unit
Rev 1.06
page 1
2015-07-24
BSR315P
Parameter
Symbol Conditions
min.
Thermal characteristics
Thermal resistance,
junction - ambient
minimal footprint,
steady state
Values
typ.
max.
Unit
R
thJA
-
-
250
K/W
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
V
(BR)DSS
V
GS
=0 V,
I
D
=-250 µA
V
GS(th)
V
DS
=V
GS
,
I
D
=-160 µA
V
DS
=-60 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=-60 V,
V
GS
=0 V,
T
j
=150 °C
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=-20 V,
V
DS
=0 V
V
GS
=-4.5 V,
I
D
=-0.49 A
V
GS
=-10 V,
I
D
=-0.62 A
Transconductance
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=-0.49 A
-60
-1
-
-1.5
-
-2
V
Zero gate voltage drain current
I
DSS
-
-0.1
-1
µA
-
-
-
-10
-10
870
-100
-100
1300
nA
mW
-
620
800
0.5
0.9
-
S
Rev 1.06
page 2
2015-07-24
BSR315P
Parameter
Symbol Conditions
min.
Dynamic characteristics
2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
1),2)
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
2)
Reverse recovery charge
2)
2)
1)
Values
typ.
max.
Unit
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=-30 V,
V
GS
=-10 V,
I
D
=-0.62 A,
R
G,ext
=6
W
V
GS
=0 V,
V
DS
=-25 V,
f
=1 MHz
-
-
-
-
-
-
-
132
42
20
8
28
21
20
176
56
30
13
46
32
30
pF
ns
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=-48 V,
I
D
=-0.62 A,
V
GS
=0 to -
10 V
-
-
-
-
0.4
2
4
-3
0.5
3
6
-
nC
V
I
S
I
S,pulse
V
SD
t
rr
Q
rr
-
T
A
=25 °C
-
V
GS
=0 V,
I
F
=-0.62 A,
T
j
=25 °C
-
-
V
R
=-30 V,
I
F
=|I
S
|,
di
F
/dt =100 A/µs
-
-
-
-0.82
32
29
-0.56
-2.5
-1.2
48
43
A
V
ns
nC
Defined by design. Not subjected to production test
See figure 16 for gate charge parameter definition
Rev 1.06
page 3
2015-07-24
BSR315P
1 Power dissipation
P
tot
=f(T
A
)
2 Drain current
I
D
=f(T
A
); |V
GS
|≥10 V
0.7
0.5
0.6
0.4
0.5
P
tot
[W]
0.4
-I
D
[A]
0.3
0.3
0.2
0.2
0.1
0.1
0
0
40
80
120
160
0
0
40
80
120
160
T
A
[°C]
T
A
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
A
=25 °C;
D
=0
parameter:
t
p
10
1
4 Max. transient thermal impedance
Z
thJA
=f(t
p
)
parameter:
D
=t
p
/T
10
3
limited by on-state
resistance
10 µs
0.5
0.2
100 µs
10
2
10
0
10 ms
1 ms
Z
thJS
[K/W]
0.1
-I
D
[A]
10
1
0.05
0.02
0.01
100 ms
10
-1
10
0
DC
single pulse
10
-2
0.1
1
10
100
10
-1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
-V
DS
[V]
t
p
[s]
Rev 1.06
page 4
2015-07-24
BSR315P
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
3
-8 V
-10 V
-4.5 V
-6 V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
1500
1400
1300
1200
-3 V
2
-3.5 V
R
DS(on)
[mW]
1100
-4 V
-I
D
[A]
-4 V
1000
900
-4.5 V
1
-5 V
-3.5 V
800
-6 V
700
-8 V
-3 V
600
-2.5 V
-10 V
0
0
1
2
3
4
5
500
0
1
2
-V
DS
[V]
-I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
parameter:
T
j
2
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
2
1.5
1.5
-I
D
[A]
1
g
fs
[S]
0
1
2
3
4
5
1
0.5
0.5
0
0
0
0.5
1
1.5
2
2.5
-V
GS
[V]
-I
D
[A]
Rev 1.06
page 5
2015-07-24
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