MCP14E6-E-P datasheet, PDF - EEWORLD Datasheet

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MCP14E6-E-P: DescriptionGate Drivers 3A MOSFET Driver; Categorysemiconductor Power management; File Size642KB，31 Pages; ManufacturerMicrochip; Websitehttps://www.microchip.com

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MCP14E6-E-P Overview

Gate Drivers 3A MOSFET Driver

MCP14E6-E-P Parametric

Parameter Name	Attribute value
Product Attribute	Attribute Value
Manufacturer	Microchip
Product Category	Gate Drivers
RoHS	Details
Mounting Style	Through Hole
Package / Case	PDIP-8
Product	MOSFET Gate Drivers
Output Current	2 A
Rise Time	12 ns
Fall Time	15 ns
Supply Voltage - Max	18 V
Supply Voltage - Min	4.5 V
Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 125 C
Type	Dual High Speed Power MOSFET Driver
Packaging	Tube
Operating Supply Current	1800 uA
Pd - Power Dissipation	1.12 W
Factory Pack Quantity	60
Unit Weight	0.032805 oz

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MCP14E6/7/8

2.0A Dual High-Speed Power MOSFET Driver With Enable

Features

• High Peak Output Current: 2.0A (typical)

• Independent Enable Function for Each Driver

Output

• Wide Input Supply Voltage Operating Range:

- 4.5V to 18V

• Low Shoot-Through/Cross-Conduction Current in

Output Stage

• High Capacitive Load Drive Capability:

- t

: 12 ns with 1000 pF load (typical)

- t

: 15 ns with 1000 pF load (typical)

• Short Delay Times: 45 ns (typical)

• Low Supply Current:

- With Logic ‘1’ Input/Enable – 1 mA (typical)

- With Logic ‘0’ Input/Enable – 300 µA (typical)

• Latch-up Protected: Passed JEDEC JESD78A

• Logic Input will Withstand Negative Swing,

up to 5V

• Space-Saving Packages:

- 8-Lead SOIC, PDIP, 6x5 DFN

General Description

The MCP14E6/7/8 devices are high-speed MOSFET

drivers, capable of providing 2.0A of peak current. The

dual inverting, dual non-inverting and complementary

outputs are directly controlled from either TTL or

CMOS (3V to 18V). These devices also feature low

shoot-through current, fast rise/fall times and

propagation delays, which make them ideal for high

switching frequency applications.

The MCP14E6/7/8 devices operate from a 4.5V to 18V

single power supply and can easily charge and

discharge 1000 pF of MOSFET gate capacitance. They

provide low enough impedances, in both the ON and

OFF states, to ensure the MOSFETs’ intended state

will not be affected, even by large transients.

The additional control of the MCP14E6/7/8 outputs is

allowed by the use of separate enable functions. The

ENB_A and ENB_B pins are active-high and are

internally pulled up to V

. The pins may be left floating

for standard operation.

The MCP14E6/7/8 dual output, 2.0A driver family is

offered in both surface-mount and pin-through-hole

packages with a -40

C to +125

C temperature rating.

The low thermal resistance of the thermally enhanced

DFN package allows greater power dissipation

capability for driving heavier capacitive or resistive

loads.

These devices are highly latch-up resistant under any

conditions within their power and voltage ratings. They

are not subject to damage when up to 5V of noise

spiking (of either polarity) occurs on the ground pin.

The devices are fully latch-up protected when tested

according to JEDEC JESD78A. All terminals are fully

protected against Electrostatic Discharge (ESD), up to

4 kV (HBM) or 400V (MM).

Applications

•

Switch Mode Power Supplies

Pulse Transformer Drive

Line Drivers

Motor and Solenoid Drive

2011 Microchip Technology Inc.

DS25006A-page 1

MCP14E6-E-P Related Products

	MCP14E6-E-P	MCP14E6-E-SN	MCP14E6-E-MF	MCP14E7T-E/SN	MCP14E8T-E/SN	MCP14E7-E/MF	MCP14E6T-E/MF
Description	Gate Drivers 3A MOSFET Driver	Gate Drivers 2A MOSFET Driver	Gate Drivers 3A MOSFET Driver	Gate Drivers 3A MOSFET Driver	Gate driver 3A MOSFET Driver	Gate driver 3A MOSFET Driver	Gate driver 3A MOSFET Driver
Is it Rohs certified?	-	-	-	conform to	conform to	conform to	conform to
Parts packaging code	-	-	-	SOIC	SOIC	DFN	DFN
package instruction	-	-	-	3.90 MM, LEAD FREE, PLASTIC, SOIC-8	SOP, SOP8,.25	HVSON, SOLCC8,.25	HVSON, SOLCC8,.25
Contacts	-	-	-	8	8	8	8
Reach Compliance Code	-	-	-	compliant	compliant	compliant	compliant
ECCN code	-	-	-	EAR99	EAR99	EAR99	EAR99
high side driver	-	-	-	YES	YES	YES	YES
Interface integrated circuit type	-	-	-	HALF BRIDGE BASED MOSFET DRIVER	HALF BRIDGE BASED MOSFET DRIVER	HALF BRIDGE BASED MOSFET DRIVER	HALF BRIDGE BASED MOSFET DRIVER
JESD-30 code	-	-	-	R-PDSO-G8	R-PDSO-G8	R-PDSO-N8	R-PDSO-N8
JESD-609 code	-	-	-	e3	e3	e3	e3
length	-	-	-	4.9 mm	4.9 mm	6 mm	6 mm
Number of functions	-	-	-	1	1	1	1
Number of terminals	-	-	-	8	8	8	8
Maximum operating temperature	-	-	-	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-	-	-	-40 °C	-40 °C	-40 °C	-40 °C
Nominal output peak current	-	-	-	2 A	2 A	2 A	2 A
Package body material	-	-	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	-	-	-	SOP	SOP	HVSON	HVSON
Encapsulate equivalent code	-	-	-	SOP8,.25	SOP8,.25	SOLCC8,.25	SOLCC8,.25
Package shape	-	-	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	-	-	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
Peak Reflow Temperature (Celsius)	-	-	-	260	260	260	260
power supply	-	-	-	4.5/18 V	4.5/18 V	4.5/18 V	4.5/18 V
Certification status	-	-	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	-	-	-	1.75 mm	1.75 mm	1 mm	1 mm
Maximum supply voltage	-	-	-	18 V	18 V	18 V	18 V
Minimum supply voltage	-	-	-	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage	-	-	-	12 V	12 V	12 V	12 V
surface mount	-	-	-	YES	YES	YES	YES
Temperature level	-	-	-	AUTOMOTIVE	AUTOMOTIVE	AUTOMOTIVE	AUTOMOTIVE
Terminal surface	-	-	-	Matte Tin (Sn) - annealed	Matte Tin (Sn) - annealed	Matte Tin (Sn) - annealed	Matte Tin (Sn) - annealed
Terminal form	-	-	-	GULL WING	GULL WING	NO LEAD	NO LEAD
Terminal pitch	-	-	-	1.27 mm	1.27 mm	1.27 mm	1.27 mm
Terminal location	-	-	-	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	-	-	-	40	40	40	40
Disconnect time	-	-	-	0.04 µs	0.04 µs	0.04 µs	0.04 µs
connection time	-	-	-	0.035 µs	0.035 µs	0.035 µs	0.035 µs
width	-	-	-	3.9 mm	3.9 mm	5 mm	5 mm

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