MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD02MUS1
0.2+/-0.05
(0.22)
(0.22)
(0.25)
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
DESCRIPTION
RD02MUS1 is a MOS FET type transistor
specifically designed for VHF/UHF RF po
-wer amplifiers applications.
OUTLINE
DRAWING
4.6+/-0.05
3.3+/-0.05
0.8+/-0.05
6.0+/-0.15
1
4.9+/-0.15
1.0+/-0.05
FEATURES
High power gain:
Pout>2W, Gp>16dB
@Vdd=7.2V,f=175MHz,520MHz
High Efficiency:65%typ.(175MHz)
High Efficiency:65%typ.(520MHz)
2
3
(0.25)
INDEX MARK
(Gate)
0.2+/-0.05
For output stage of high power amplifiers
In VHF/UHF band mobile radio sets.
0.9+/-0.1
APPLICATION
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
Note
( ):center value
UNIT:mm
RoHS COMPLIANT
RD02MUS1-101,T112 is a RoHS compliant products.
RoHS compliance is indicate by the letter “G” after the Lot Marking.
This product include the lead in high melting temperature type solders.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
RD02MUS1
MITSUBISHI ELECTRIC
1/9
10 Jan 2006
3.5+/-0.05
2.0+/-0.05
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD02MUS1
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
ABSOLUTE MAXIMUM RATINGS
(Tc=25
°C
UNLESS OTHERWISE NOTED)
SYMBOL
VDSS
VGSS
Pch
Pin
ID
Tch
Tstg
Rth j-c
PARAMETER
Drain to source voltage
Gate to source voltage
Channel dissipation
Input Power
Drain Current
Junction temperature
Storage temperature
Thermal resisitance
CONDITIONS
Vgs=0V
Vds=0V
Tc=25
°C
Zg=Zl=50
Ω
-
-
-
Junction to case
RATINGS UNIT
30
V
+/-20
V
21.9
W
0.1
W
1.5
A
°C
150
-40 to +125
°C
°C/W
5.7
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
SYMBOL
I
DSS
I
GSS
V
th
Pout1
η
D1
Pout2
η
D2
PARAMETER
(Tc=25
°C
, UNLESS OTHERWISE NOTED)
CONDITIONS
V
DS
=17V, V
GS
=0V
V
GS
=10V, V
DS
=0V
V
DS
=12V, I
DS
=1mA
V
DD
=7.2V, Pin=50mW,
f=175MHz Idq=200mA
V
DD
=7.2V, Pin=50mW,
f=520MHz Idq=200mA
V
DD
=9.2V,Po=2W(PinControl)
f=175MHz,Idq=200mA,Zg=50
Ω
Load VSWR=20:1(All Phase)
V
DD
=9.2V,Po=2W(PinControl)
f=520MHz,Idq=200mA,Zg=50
Ω
Load VSWR=20:1(All Phase)
LIMITS
MIN
TYP MAX.
-
-
100
-
-
1
1
1.8
3
2
3
-
55
65
-
2
3
-
50
65
-
No destroy
UNIT
uA
uA
V
W
%
W
%
-
Zero gate Voltage drain current
Gate to source leak current
Gate threshold Voltage
Output power
Drain efficiency
Output power
Drain efficiency
Load VSWR tolerance
Load VSWR tolerance
No destroy
-
Note : Above parameters , ratings , limits and conditions are subject to change.
RD02MUS1
MITSUBISHI ELECTRIC
2/9
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD02MUS1
Vgs-Ids CHARACTERISTICS
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
TYPICAL CHARACTERISTICS
25
CHANNEL DISSIPATION Pch(W)
20
15
10
5
0
0
40
80
120
160
AMBIENT TEMPERATURE Ta(°C)
200
DRAIN DISSIPATION VS.
AMBIENT TEMPERATURE
*1:The material of the PCB
Glass epoxy (t=0.6 mm)
3.0
2.5
2.0
1.5
1.0
GM
Ta=+25°C
Vds=7.2V
Ids
On PCB(*1) with Heat-sink
Ids(A),GM(S)
On PCB(*1)
0.5
0.0
0
1
2
3
Vgs(V)
4
5
Vds-Ids CHARACTERISTICS
5.0
4.5
4.0
3.5
Ciss(pF)
3.0
Ids(A)
2.5
2.0
1.5
1.0
0.5
0.0
0
2
4
6
Vds(V)
8
10
Vgs=4V
Vgs=5V
Vgs=6V
Ta=+25°C
Vgs=9V
Vgs=8V
Vgs=7V
Vds VS. Ciss CHARACTERISTICS
40
Ta=+25°C
f=1MHz
30
20
10
Vgs=3V
0
0
5
10
Vds(V)
15
20
Vds VS. Coss CHARACTERISTICS
40
Ta=+25°C
f=1MHz
Vds VS. Crss CHARACTERISTICS
6
5
4
Ta=+25°C
f=1MHz
30
Coss(pF)
Crss(pF)
20
3
2
10
1
0
0
5
10
Vds(V)
15
20
0
0
5
10
Vds(V)
15
20
RD02MUS1
MITSUBISHI ELECTRIC
3/9
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD02MUS1
Pin-Po CHARACTERISTICS
@f=175MHz
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS
@f=175MHz
40
35
Po(dBm) , Gp(dB) ,
Idd(A)
30
25
20
15
10
5
0
-10
-5
0
5 10
Pin(dBm)
Ta=+25°C
f=175MHz
Vdd=7.2V
Idq=200mA
Gp
Po
η½
100
90
70
60
50
40
30
20
Pout(W) , Idd(A)
80
ηd(%)
4.0
Po
100
80
60
40
ηd(%)
Idd(A)
10 Jan 2006
ηd
3.0
2.0
1.0
0.0
0
20
40
60
Pin(mW)
80
Idd
Ta=25°C
f=175MHz
Vdd=7.2V
Idq=200mA
15
20
20
100
Pin-Po CHARACTERISTICS
@f=520MHz
40
35
Po(dBm) , Gp(dB) ,
Idd(A)
30
25
20
15
10
5
0
-10
-5
0
5 10
Pin(dBm)
Ta=+25°C
f=520MHz
Vdd=7.2V
Idq=200mA
Gp
η½
Po
Pin-Po CHARACTERISTICS
@f=520MHz
100
90
70
60
50
40
30
20
0.0
0
20
40
60
Pin(mW)
80
20
100
Pout(W) , Idd(A)
80
ηd(%)
3.0
2.0
1.0
ηd
Ta=25°C
f=520MHz
Vdd=7.2V
Idq=200mA
4.0
Po
100
80
60
40
ηd(%)
Idd
15
20
Vdd-Po CHARACTERISTICS
@f=175MHz
7
6
5
Po(W)
4
3
2
1
0
2
4
6
8
Vdd(V)
10
12
Idd
Ta=25°C
f=175MHz
Pin=50mW
Idq=200mA
Zg=ZI=50 ohm
Po
Vdd-Po CHARACTERISTICS
@f=520MHz
1.4
1.2
1.0
Idd(A)
Po(W)
0.8
0.6
0.4
0.2
0.0
7
6
5
4
3
2
1
0
2
4
6
8
Vdd(V)
10
12
Ta=25°C
f=520MHz
Pin=50mW
Idq=200mA
Zg=ZI=50 ohm
Po
1.4
1.2
1.0
Idd
0.8
0.6
0.4
0.2
0.0
RD02MUS1
MITSUBISHI ELECTRIC
4/9
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD02MUS1
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
TYPICAL CHARACTERISTICS
Vgs-Ids CHARACTORISTICS 2
4
Vds=10V
Tc=-25~+75°C
3
Ids(A),GM(S)
-25°C
+25°C
2
+75°C
1
0
2
3
4
Vgs(V)
5
6
RD02MUS1
MITSUBISHI ELECTRIC
5/9
10 Jan 2006
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