0.375” (9.5mm) lead length, 5lbs. (2.3 kg) tension
• Includes 1N6267 thru 1N6303A
1.0 (25.4)
MIN.
0.210 (5.3)
0.190 (4.8)
DIA.
0.375 (9.5)
0.285 (7.2)
Mechanical Data
Case:
Molded plastic body over passivated junction
Terminals:
Plated axial leads, solderable per MIL-STD-
750, Method 2026
Polarity:
For unidirectional types the color band denotes
the cathode, which is positive with respect to the anode
under normal TVS operation
Mounting Position:
Any
Weight:
0.045oz., 1.2g
Packaging codes/options:
1/1K per Bulk Box, 11K/box
4/1.4K per 13” Reel (52mm Tape), 4.2K/box
Dimensions in inches
and (millimeters)
1.0 (25.4)
MIN.
0.042 (1.07)
0.038 (0.96)
DIA.
Devices for Bidirectional Applications
For bi-directional, use C or CA suffix for types 1.5KE6.8 thru types 1.5KE440
(e.g. 1.5KE6.8C, 1.5KE440CA). Electrical characteristics apply in both directions.
Maximum Ratings and Characteristics
(T
Parameter
Peak power dissipation with a 10/1000µs waveform
(1)
(Fig. 1)
A
= 25°C unless otherwise noted)
Symbol
P
PPM
I
PPM
P
M(AV)
Limit
Minimum 1500
See Next Table
6.5
Unit
W
A
W
Peak pulse current wih a 10/1000µs waveform
(1)
Steady state power dissipation
at T
L
= 75
O
C, lead lengths 0.375” (9.5mm)
(2)
Peak forward surge current, 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method) unidirectional only
(3)
Maximum instantaneous forward voltage
at 100A for unidirectional only
(4)
Typical thermal resistance junction-to-lead
Typical thermal resistance junction-to-ambient
Operating junction and storage temperature range
Notes:
(1)
(2)
(3)
(4)
I
FSM
200
A
V
F
R
θJL
R
θJA
T
J
, T
STG
3.5/5.0
20
75
–55 to +175
V
°C/W
°C/W
O
C
Non-repetitive current pulse, per Fig.3 and derated above T
A
= 25°C per Fig. 2
Mounted on copper pad area of 1.6 x 1.6” (40 x 40mm) per Fig. 5
Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
V
F
= 3.5V for devices of V
(BR)
< 220V, and V
F
= 5.0 Volt max. for devices of V
(BR)
> 220V
11/7/00
1.5KE6.8 thru 1.5KE440CA
and 1N6267 thru 1N6303A
T
RANS
Z
ORB
®
Transient Voltage Suppressors
Electrical Characteristics
(T
JEDEC
Type
Number
1N6267
1N6267A
1N6268
1N6268A
1N6269
1N6269A
1N6270
1N6270A
1N6271
1N6271A
1N6272
1N6272A
1N6273
1N6273A
1N6274
1N6274A
1N6275
1N6275A
1N6276
1N6276A
1N6277
1N6277A
1N6278
1N6278A
1N6279
1N6279A
1N6280
1N6280A
1N6281
1N6281A
1N6282
1N6282A
1N6283
1N6283A
1N6284
1N6284A
1N6285
1N6285A
1N6286
1N6286A
1N6287
1N6287A
1N6288
1N6288A
1N6289
1N6289A
1N6290
1N6290A
1N6291
General
Semiconductor
Part
Number
+1.5KE6.8
+1.5KE6.8A
+1.5KE7.5
+1.5KE7.5A
+1.5KE8.2
+1.5KE8.2A
+1.5KE9.1
+1.5KE9.1A
+1.5KE10
+1.5KE10A
+1.5KE11
+1.5KE11A
+1.5KE12
+1.5KE12A
+1.5KE13
+1.5KE13A
+1.5KE15
+1.5KE15A
+1.5KE16
+1.5KE16A
+1.5KE18
+1.5KE18A
+1.5KE20
+1.5KE20A
+1.5KE22
+1.5KE22A
+1.5KE24
+1.5KE24A
+1.5KE27
+1.5KE27A
+1.5KE30
+1.5KE30A
+1.5KE33
+1.5KE33A
+1.5KE36
+1.5KE36A
+1.5KE39
+1.5KE39A
+1.5KE43
+1.5KE43A
+1.5KE47
+1.5KE47A
1.5KE51
1.5KE51A
1.5KE56
1.5KE56A
1.5KE62
1.5KE62A
1.5KE68
A
= 25°C unless otherwise noted)
Breakdown Voltage
V
(BR)
(V)
(1)
Min
6.12
6.45
6.75
7.13
7.38
7.79
8.19
8.65
9.00
9.50
9.90
10.5
10.8
11.4
11.7
12.4
13.5
14.3
14.4
15.2
16.2
17.1
18.0
19.0
19.8
20.9
21.6
22.8
24.3
25.7
27.0
28.5
29.7
31.4
32.4
34.2
35.1
37.1
38.7
40.9
42.3
44.7
45.9
48.5
50.4
53.2
55.8
58.9
61.2
Max
7.48
7.14
8.25
7.88
9.02
8.61
10.0
9.55
11.0
10.5
12.1
11.6
13.2
12.6
14.3
13.7
16.5
15.8
17.6
16.8
19.8
18.9
22.0
21.0
24.2
23.1
26.4
25.2
29.7
28.4
33.0
31.5
36.3
34.7
39.6
37.8
42.9
41.0
47.3
45.2
51.7
49.4
56.1
53.6
61.8
58.8
68.2
65.1
74.8
Test
Current
at
I
T
(mA)
10
10
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
Voltage
V
WM
(V)
5.50
5.80
6.05
6.40
6.63
7.02
7.37
7.78
8.10
8.55
8.92
9.40
9.72
10.2
10.5
11.1
12.1
12.8
12.9
13.6
14.5
15.3
16.2
17.1
17.8
18.8
19.4
20.5
21.8
23.1
24.3
25.6
26.8
28.2
29.1
30.8
31.6
33.3
34.8
36.8
38.1
40.2
41.3
43.6
45.4
47.8
50.2
53.0
55.1
Maximum
Reverse
Leakage
at V
WM
I
D
(4)
(µA)
1000
1000
500
500
200
200
50
50
10
10
5.0
5.0
5.0
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Maximum
Peak Pulse
Current
I
PPM
(2)
(A)
139
143
128
133
120
124
109
112
100
103
92.6
96.2
86.7
89.8
78.9
82.4
68.2
70.8
63.8
66.7
56.6
59.5
51.5
54.2
47.0
49.0
43.2
45.2
38.4
40.0
34.5
36.2
31.4
32.8
28.8
30.1
26.6
27.8
24.2
25.3
22.1
23.1
20.4
21.4
18.6
19.5
16.9
17.6
15.3
Maximum
Clamping
Voltage
at I
PPM
V
C
(V)
10.8
10.5
11.7
11.3
12.5
12.1
13.8
13.4
15.0
14.5
16.2
15.6
17.3
16.7
19.0
18.2
22.0
21.2
23.5
22.5
26.5
25.2
29.1
27.7
31.9
30.6
34.7
33.2
39.1
37.5
43.5
41.4
47.7
45.7
52.0
49.9
56.4
53.9
61.9
59.3
67.8
64.8
73.5
70.1
80.5
77.0
89.0
85.0
98.0
Maximum
Temp.
Coefficient
of V
(BR)
(% /
°C)
0.057
0.057
0.061
0.061
0.065
0.065
0.068
0.068
0.073
0.073
0.075
0.075
0.076
0.078
0.081
0.081
0.084
0.084
0.086
0.086
0.088
0.089
0.090
0.090
0.092
0.092
0.094
0.094
0.096
0.096
0.097
0.097
0.098
0.098
0.099
0.099
0.100
0.100
0.101
0.101
0.101
0.101
0.102
0.102
0.103
0.103
0.104
0.104
0.104
1.5KE6.8 thru 1.5KE440CA
and 1N6267 thru 1N6303A
T
RANS
Z
ORB
®
Transient Voltage Suppressors
Electrical Characteristics
(Cont’d)
JEDEC
Type
Number
1N6291A
1N6292
1N6292A
1N6293
1N6293A
1N6294
1N6294A
1N6295
1N6295A
1N6296
1N6296A
1N6297
1N6297A
1N6298
1N6298A
1N6299
1N6299A
1N6300
1N6300A
1N6301
1N6301A
1N6302
1N6302A
1N6303
1N6303A
General
Semiconductor
Part
Number
1.5KE68A
1.5KE75
1.5KE75A
1.5KE82
1.5KE82A
1.5KE91
1.5KE91A
1.5KE100
1.5KE100A
1.5KE110
1.5KE 110A
1.5KE120
1.5KE120A
1.5KE130
1.5KE130A
1.5KE150
1.5KE150A
1.5KE160
1.5KE160A
1.5KE170
1.5KE170A
1.5KE180
1.5KE180A
1.5KE200
1.5KE200A*
1.5KE220
1.5KE220A*
1.5KE250
1.5KE250A
1.5KE300
1.5KE300A
1.5KE350
1.5KE350A
1.5KE400
1.5KE400A
1.5KE440
1.5KE440A
Breakdown Voltage
V
(BR)
(V)
(1)
Min
64.6
67.5
71.3
73.8
77.9
81.9
86.5
90.0
95.0
99.0
105
108
114
117
124
136
143
144
152
153
162
162
171
180
190
198
209
225
237
270
285
315
333
360
380
396
418
Max
71.4
82.5
78.8
90.2
86.1
100.0
95.5
110
105
121
116
132
126
143
137
165
158
176
168
187
179
198
189
220
210
242
231
275
263
330
315
385
368
440
420
484
462
(T
A
= 25°C unless otherwise noted)
Test
Current
at
I
T
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
Voltage
V
WM
(V)
58.1
60.7
64.1
66.4
70.1
73.7
77.8
81.0
85.5
89.2
94.0
97.2
102
105
111
121
128
130
136
138
145
146
154
162
171
175
185
202
214
243
256
284
300
324
342
356
376
Maximum
Reverse
Leakage
at V
WM
I
D
(4)
(µA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Maximum
Peak Pulse
Current
I
PPM
(2)
(A)
16.3
13.9
14.6
12.7
13.3
11.5
12.0
10.4
10.9
9.5
9.9
8.7
9.1
8.0
8.4
7.0
7.2
6.5
6.8
6.1
6.4
5.8
6.1
5.2
5.5
4.4
4.6
4.2
4.4
3.5
3.6
3.0
3.1
2.6
2.7
2.4
2.5
Maximum
Clamping
Voltage
at I
PPM
V
C
(V)
92.0
109
104
118
113
131
125
144
137
158
152
173
165
187
179
215
207
230
219
244
234
258
246
287
274
344
328
360
344
430
414
504
482
574
548
631
602
Maximum
Temp.
Coefficient
of V
(BR)
(% /
°C)
0.104
0.105
0.105
0.105
0.105
0.106
0.106
0.106
0.106
0.107
0.107
0.107
0.107
0.107
0.107
0.108
0.106
0.106
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
Notes:
(1) V
(BR)
measured after I
T
applied for 300µs, I
T
=square wave pulse or equivalent
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE CA62.35
(4) For bidirectional types with V
R
10 volts and less the I
D
limit is doubled
* Bidirectional versions are UL approved under component across the line protection, ULV1414 file number E108274 (1.5KE200CA, 1.5KE220CA)
+ UL listed for Telecom applications protection, 497B, file number E136766 for both uni-directional and bi-directional devices
Application
• This series of Silicon Transient Suppressors is used in applications where large voltage transients can permanently damage voltage-sensitive components.
• The TVS diode can be used in applications where induced lightning on rural or remote transmission lines presents a hazard to electronic circuitry
(ref: R.E.A. specification P.E. 60).
• This Transient Voltage Suppressor diode has a pulse power rating of 1500 watts for one millisecond. The response time of TVS diode clamping action is
effectively instantaneous (1 x 10
-9
seconds bidirectional); therefore, they can protect integrated circuits, MOS devices, hybrids, and other voltage sensitive
semiconductors and components. TVS diodes can also be used in series or parallel to increase the peak power ratings.
1) When using TI's DSP, TI's analog devices can be seamlessly connected to the DSP. No connection or switching devices are required between devices. This reduces the size of the board and reduces the ...
[align=left][font=微软雅黑][size=4]When it comes to haze days, we all know to turn on the air purifier at home and wear a mask when going out. As everyone pays more attention to preventing haze, related a...
As the number of programs increases, the programs in the microcontroller become more and more complicated but indispensable. More programs mean more unknown errors. My program may run fine for one or ...
In battery pack design, battery safety, battery life, battery life, fast charging, etc. are important design considerations. Currently, the battery pack design solutions provided by TI can be applied ...
[i=s] This post was last edited by paulhyde on 2014-9-15 03:47 [/i] 1. Components for this group Single-chip microcomputer minimum system board (only single-chip microcomputer chip, keyboard and displ...
1. Several nouns
ABI:
The specifications that an executable file must follow in order to run in a specific execution environment;
Separately generated relocatabl...[Details]
A vacuum eutectic furnace is a critical piece of equipment used in the manufacturing and processing of various materials, particularly in the fields of microelectronics and nanotechnology. One of t...[Details]
The mass production process of the new generation of cockpit platform has started, and the smart cockpit market has entered a new bonus cycle of technology iteration and platform upgrade.
...[Details]
Whether it is an electric car or an ordinary fuel car, for the vast majority of car buyers, the final cost of use is what they care about most. For fuel cars, how to save fuel is what drivers care ...[Details]
As the main model among new energy vehicles, pure electric vehicles have received strong support and encouragement from the country in recent years, and their development is changing with each pass...[Details]
New energy pure electric vehicles generally accelerate faster than comparable fuel-powered vehicles, both from a standing start and while accelerating. Many believe this is simply due to the motor'...[Details]
Multi-touch mobile phone
Multi-touch is a system that can respond to multiple touches on the screen at the same time. Multi-touch phones are divided into capacitive and resistive types. Capaci...[Details]
Based on a survey of more than ten intelligent robot companies, this article sorts out and analyzes the current development status of the intelligent industry and the challenges and differences it ...[Details]
According to foreign media reports, Nissan Motor has recently reached a cooperation with US battery technology company LiCAP Technologies to jointly promote the research and development of next-gen...[Details]
As AI accelerates across industries, the demand for data center infrastructure is also growing rapidly.
Keysight Technologies, in collaboration with Heavy Reading, released the "Beyo...[Details]
Electric vehicles are now widespread, but they've brought with them a host of problems, the most prominent of which is charging. Small electric vehicles (EVs) are a new form of transportation in a ...[Details]
1. Fault phenomenon and cause analysis
1. During the operation of the equipment, the expansion sleeve is subjected to a large torque, and the mating surfaces of the shaft and the sleeve move...[Details]
According to foreign media reports, Ford Motor has applied to the U.S. Patent and Social Security Office (USPTO) for a patent for a door anti-collision system that may be used in future Ford vehicl...[Details]
To improve the lateral active safety of intelligent connected vehicles, the identification and definition of unexpected functional safety scenarios for the EPS (Electronic Steering System) ...[Details]
In the field of intelligent driving, regulations are becoming increasingly stringent, and the technical threshold continues to rise. Especially after the traffic accident in March 2025, the Ministr...[Details]
DSP and ARM Processors
京公网安备 11010802033920号
EEWORLD
