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2SC5761

Description
NPN SiGe RF TRANSISTOR FOR LOW NOISE & HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
File Size65KB,14 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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2SC5761 Overview

NPN SiGe RF TRANSISTOR FOR LOW NOISE & HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)

DATA SHEET
NPN SILICON GERMANIUM RF TRANSISTOR
2SC5761
NPN SiGe RF TRANSISTOR FOR
LOW NOISE
HIGH-GAIN AMPLIFICATION
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
FEATURES
• Ideal for low noise
high-gain amplification
NF = 0.9 dB TYP. @ V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz
• Maximum stable power gain: MSG = 20.0 dB TYP. @ V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
• SiGe technology (f
T
= 60 GHz, f
max
= 60 GHz)
• Flat-lead 4-pin thin-type super minimold (M04) package
ORDERING INFORMATION
Part Number
2SC5761
2SC5761-T2
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
2
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
8.0
2.3
1.2
35
80
150
−65
to +150
Unit
V
V
V
mA
mW
°C
°C
T
j
T
stg
Note
Mounted on 1.08 cm
×
1.0 mm (t) glass epoxy substrate
THERMAL RESISTANCE
Parameter
Junction to Case Resistance
Symbol
R
th (j-c)
Value
150
Unit
°C/W
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10212EJ02V0DS (2nd edition)
Date Published May 2003 CP(K)
Printed in Japan
The mark
!
shows major revised points.
NEC Compound Semiconductor Devices 2001, 2003

2SC5761 Related Products

2SC5761 2SC5761-T2
Description NPN SiGe RF TRANSISTOR FOR LOW NOISE & HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) NPN SiGe RF TRANSISTOR FOR LOW NOISE & HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
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